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    HIGH FREQUENCY SILICON TRANSISTOR Search Results

    HIGH FREQUENCY SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    HIGH FREQUENCY SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C


    Original     		PDF HN3G01J 100mA,

    Untitled

    Abstract: No abstract text available
    Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C


    Original     		PDF HN3G01J

    UPA509TA

    Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
    Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor


    Original     		PDF PA509TA SC-74A UPA509TA uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509

    Untitled

    Abstract: No abstract text available
    Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON


    Original     		PDF 2N5943 50dBmVI 40dBmVI 50dBmV)

    c 4977 transistor

    Abstract: 702 mini transistor 2SC5621 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5621 2SC5621 c 4977 transistor 702 mini transistor LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832

    2N5160 equivalent

    Abstract: 2n5160 CM5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE
    Text: Central CM5160 TM Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching


    Original     		PDF CM5160 CM5160 2N5160. 200MHz 18-November 2N5160 equivalent 2n5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE

    sc 6038

    Abstract: 2SC5634 a 4503 data sheet
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5634 2SC5634 sc 6038 a 4503 data sheet

    sc 6038

    Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5636 2SC5636 sc 6038 transistor 3669 A 4503 ic 1346 transistor making 528

    sc 6038

    Abstract: a 4503 data sheet A 4503 ic ic a 4503 2SC5635 A 3141 s11
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.


    Original     		PDF 2SC5635 2SC5635 sc 6038 a 4503 data sheet A 4503 ic ic a 4503 A 3141 s11

    transistor c5

    Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
    Text: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.


    Original     		PDF 2N3866 transistor c5 transistor c3-12 c4 ic rf amplifier high frequency transistor

    2N3866A

    Abstract: 2n3866 Transistor 2N3866
    Text: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.


    Original     		PDF 2N3866 2N3866A 28-April Transistor 2N3866

    MPQ918

    Abstract: MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor
    Text: MPQ918 SILICON QUAD DUAL IN-LINE NPN SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed for low-level, high-ijain am plifier applications. • Lo w Noise Figure — @ I q - 1.0 mAdc


    OCR Scan     		PDF MPQ918 2N918 MPQ918 MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor

    MRF5160

    Abstract: F5160 MRF*5160
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial


    OCR Scan     		PDF F5160 MRF3866 MRF5160 MRF5160 F5160 MRF*5160

    Untitled

    Abstract: No abstract text available
    Text: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF HN3G01J

    transistor npn 12V 1A Collector Current

    Abstract: 2SC3053 uj01
    Text: SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION . 2SC3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING -, c +0-5 2 5 -0.3 designed for high frequency amplify, oscillating, frequency exchange, medium


    OCR Scan     		PDF 2SC3053 2SC3053 Ta-25t: transistor npn 12V 1A Collector Current uj01

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS


    OCR Scan     		PDF HN3G01J

    N3G01J

    Abstract: HN3G01J EG160
    Text: TOSHIBA HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N3G01J HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS AUDIO FREQUENCY AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF HN3G01J N3G01J N3G01J HN3G01J EG160

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.


    OCR Scan     		PDF MRF313 56-590-65/4B VK200-20/4B MRF313

    2N5583

    Abstract: MRF558
    Text: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and


    OCR Scan     		PDF MIL-S-19500 MRFS583HX, MRF5583HXV 2N5583 b3b72S4 MRF558

    MPS3866

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor IC = 400 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO


    OCR Scan     		PDF MPS3866

    MRF5811

    Abstract: ADC IC 0808
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1 MRF5811LT1 MRF5811 ADC IC 0808

    MRF581

    Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF581 MRF581A VK-200, 56-590-65/3B MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead

    3020

    Abstract: 3019 2N3019 3020 transistor 2n3020
    Text: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.


    OCR Scan     		PDF 2N3019 2N3019 3020 3019 3020 transistor 2n3020

    LP1983

    Abstract: motorola 039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ


    OCR Scan     		PDF LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039