Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C
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HN3G01J
100mA,
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C
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HN3G01J
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UPA509TA
Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor
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PA509TA
SC-74A
UPA509TA
uPA50
MARKING UV
N-Channel Silicon Junction Field Effect Transistor
uPA509
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Untitled
Abstract: No abstract text available
Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON
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2N5943
50dBmVI
40dBmVI
50dBmV)
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c 4977 transistor
Abstract: 702 mini transistor 2SC5621 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.
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2SC5621
2SC5621
c 4977 transistor
702 mini transistor
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
MAG 1832
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2N5160 equivalent
Abstract: 2n5160 CM5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE
Text: Central CM5160 TM Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching
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CM5160
CM5160
2N5160.
200MHz
18-November
2N5160 equivalent
2n5160
TRANSISTOR REPLACEMENT
high frequency silicon transistor
TO-39 CASE
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sc 6038
Abstract: 2SC5634 a 4503 data sheet
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.
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2SC5634
2SC5634
sc 6038
a 4503 data sheet
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sc 6038
Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.
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2SC5636
2SC5636
sc 6038
transistor 3669
A 4503 ic
1346 transistor
making 528
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sc 6038
Abstract: a 4503 data sheet A 4503 ic ic a 4503 2SC5635 A 3141 s11
Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.
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2SC5635
2SC5635
sc 6038
a 4503 data sheet
A 4503 ic
ic a 4503
A 3141 s11
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transistor c5
Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Text: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.
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2N3866
transistor c5
transistor c3-12
c4 ic rf amplifier
high frequency transistor
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2N3866A
Abstract: 2n3866 Transistor 2N3866
Text: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.
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2N3866
2N3866A
28-April
Transistor 2N3866
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MPQ918
Abstract: MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor
Text: MPQ918 SILICON QUAD DUAL IN-LINE NPN SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed for low-level, high-ijain am plifier applications. • Lo w Noise Figure — @ I q - 1.0 mAdc
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MPQ918
2N918
MPQ918
MO chip Transistor
2n918 die
transistor k84
2N918
2N918 thermal resistance
PDB00
chip die hp transistor
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MRF5160
Abstract: F5160 MRF*5160
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial
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F5160
MRF3866
MRF5160
MRF5160
F5160
MRF*5160
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C
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HN3G01J
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transistor npn 12V 1A Collector Current
Abstract: 2SC3053 uj01
Text: SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION . 2SC3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING -, c +0-5 2 5 -0.3 designed for high frequency amplify, oscillating, frequency exchange, medium
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2SC3053
2SC3053
Ta-25t:
transistor npn 12V 1A Collector Current
uj01
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS
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HN3G01J
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N3G01J
Abstract: HN3G01J EG160
Text: TOSHIBA HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N3G01J HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS AUDIO FREQUENCY AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C
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HN3G01J
N3G01J
N3G01J
HN3G01J
EG160
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.
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MRF313
56-590-65/4B
VK200-20/4B
MRF313
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2N5583
Abstract: MRF558
Text: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and
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MIL-S-19500
MRFS583HX,
MRF5583HXV
2N5583
b3b72S4
MRF558
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MPS3866
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor IC = 400 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO
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MPS3866
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MRF5811
Abstract: ADC IC 0808
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1
MRF5811LT1
MRF5811
ADC IC 0808
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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3020
Abstract: 3019 2N3019 3020 transistor 2n3020
Text: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.
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2N3019
2N3019
3020
3019
3020 transistor
2n3020
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LP1983
Abstract: motorola 039
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ
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LP1983
MRF901
Temperat13
IS22I
LP1983
motorola 039
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