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    HIGH GAIN FET FOR RADIATION DETECTOR Search Results

    HIGH GAIN FET FOR RADIATION DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN FET FOR RADIATION DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    motion DETECTOR CIRCUIT DIAGRAM

    Abstract: RE200B motion DETECTOR CIRCUIT DIAGRAM for light PIR motion DETECTOR block DIAGRAM Sensor Pir RE200B motion detector light circuit diagram PIR325 motion DETECTOR block DIAGRAM re200b pir sensor RE200B datasheet
    Text: Application Note AN2105 Pyroelectric Infrared Motion Detector, PSoC Style By: David Van Ess, ported/updated by M. Ganesh Raaja Associated Project: New AN2015.zip Software Version: PSoC Designer 4.2 SP3 Associated Part Family: CY8C24x23A, CY8C27x43, CY8C29x66


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    AN2105 AN2015 CY8C24x23A, CY8C27x43, CY8C29x66 motion DETECTOR CIRCUIT DIAGRAM RE200B motion DETECTOR CIRCUIT DIAGRAM for light PIR motion DETECTOR block DIAGRAM Sensor Pir RE200B motion detector light circuit diagram PIR325 motion DETECTOR block DIAGRAM re200b pir sensor RE200B datasheet PDF

    motion DETECTOR CIRCUIT DIAGRAM

    Abstract: ACTIVE INFRARED MOTION DETECTOR PIR human motion DETECTOR CIRCUIT DIAGRAM PIR motion DETECTOR CIRCUIT DIAGRAM human detection sensors circuit pir pyroelectric amplifier circuit pir human detection sensors circuit motion DETECTOR block DIAGRAM pir human detector sensors circuit PIR motion DETECTOR block DIAGRAM
    Text: Using Pyroelectric Infra-Red PIR Sensors for Motion Detection By (Geethesh N.S., PSoC Consultant, Cypress Semiconductor Corp. and Martin Cornish, Field Applications Engineer, Cypress Semiconductor Corp.) Executive Summary Motion detection of an object can be achieved by using some stimulus and sensing its reflection as in RADAR, or by sensing


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    PIR325

    Abstract: CD4538 application LM324 PIR CD4538 application note CD4538 applications motion DETECTOR CIRCUIT CD4538 ACTIVE INFRARED MOTION DETECTOR S-812C50AY-B human MOTION DETECTOR ir sensor
    Text: INFRARED PARTS MANUAL PIR325 FL65 GLOLAB CORPORATION Thank you for buying our Pyroelectric Infrared components. The goal of Glolab is to produce top quality electronic kits, products and components. All of our kits are designed by Glolab engineers and tested in our laboratory. Mechanical devices,


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    PIR325 LP324 CD4538 1N914 S-812C50AY-B 2N7000 PIR325 CD4538 application LM324 PIR CD4538 application note CD4538 applications motion DETECTOR CIRCUIT CD4538 ACTIVE INFRARED MOTION DETECTOR S-812C50AY-B human MOTION DETECTOR ir sensor PDF

    xr 2204

    Abstract: Amptek XR-100CR XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector
    Text: R AMP TEK All Solid State Design No Liquid Nitrogen s Landed on Mar 7 9 19 , 4 ly Ju FET Be Window Detector Temperature Monitor Cooler Mounting Stud • • • • • • Si-PIN Photodiode Thermoelectric Cooler Beryllium Window Hermetic Package TO-8 Wide Detection Range


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    XR-100CR xr 2204 Amptek XR-100T-CZT RTD 1055 lemo 6 pin connector lemo connector LEMO px2cr 9pin D-connector PDF

    ku-band pll lnb

    Abstract: PC3250T7L 78M05 051
    Text: PreliminaryData Sheet PC3250T7L SiGe CMOS/BiCMOS Integrated Circuit IF Down-converter MMIC for Ku-band LNB Converter R09DS0052EJ0100 Rev.1.00 Oct 23, 2012 DESCRIPTION The μPC3250T7L is a CMOS/BiCMOS MMIC for Ku-band LNB converter. This device is housed in a 24-pin plastic QFN Quad Flat Non-Leaded (T7L) package.


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    PC3250T7L PC3250T7L 24-pin R09DS0052EJ0100 dB/36 ku-band pll lnb 78M05 051 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


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    CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    charge amplifier

    Abstract: S3590 918* replacement H4083 SE-171 Si pin photodiode module Si photodiode, united detector
    Text: MODULE Charge amplifier H4083 For radiation and high energy particle detection H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used


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    H4083 H4083 S3590/S3204 S3590 H4083, SE-171 KACC1053E01 charge amplifier 918* replacement Si pin photodiode module Si photodiode, united detector PDF

    H4083

    Abstract: charge amplifier S3590 918* replacement GAMMA Radiation Detector SE-171 Si pin photodiode module
    Text: MODULE Charge amplifier H4083 For radiation and high energy particle detection H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used


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    H4083 H4083 S3590/S3204 S3590 H4083, SE-171 KACC1053E01 charge amplifier 918* replacement GAMMA Radiation Detector Si pin photodiode module PDF

    APD power supply

    Abstract: microcontroller PWM 500khz apd gain control PIN APD OPTICAL DIODE avalanche photodiodes max5026 AN1831 APP1831 MAX5304 MAX6102
    Text: Maxim > App Notes > Power-Supply Circuits Keywords: APD bias circuit, APD, avalanche photodiode, low-noise, bias, boost converter, discontinuous mode, digital adjustment, optical communication, fiber-optic receiver Jan 07, 2003 APPLICATION NOTE 1831 Low-Noise APD Bias Circuit


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    com/an1831 MAX5026: MAX5304: MAX6102: AN1831, APP1831, Appnote1831, APD power supply microcontroller PWM 500khz apd gain control PIN APD OPTICAL DIODE avalanche photodiodes max5026 AN1831 APP1831 MAX5304 MAX6102 PDF

    TA8252HQ

    Abstract: No abstract text available
    Text: TA8252HQ TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8252HQ Max Power 37W BTL x 4ch Audio Power IC The TA8252HQ is 4ch BTL audio power amplifier for car audio application. This IC can generate more high power: POUT MAX = 37W as it is included the pure complementary PNP and NPN


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    TA8252HQ TA8252HQ 060116EBF Sn-37Pb PDF

    pin diagram for IC cd 1619 fm receiver

    Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
    Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.


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    OPA111

    Abstract: HIGH GAIN FET for radiation detector 2n4117 equivalent 2N4117 phono preamplifier circuit diagram OPA111AD OPA111AM OPA111BM OPA111SM op27 photodiode circuit
    Text: OPA111 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV√Hz max 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 1pA max LOW OFFSET: 250µV max


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    OPA111 10kHz) 120dB 100dB OPA111 106dB INA105 HIGH GAIN FET for radiation detector 2n4117 equivalent 2N4117 phono preamplifier circuit diagram OPA111AD OPA111AM OPA111BM OPA111SM op27 photodiode circuit PDF

    TA8272HQ

    Abstract: No abstract text available
    Text: TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8272HQ Max Power 43 W BTL x 4 ch Audio Power IC The TA8272HQ is 4 ch BTL audio power amplifier for car audio application. This IC can generate more high power: POUTMAX = 43 W as it is included the pure complementary PNP and NPN transistor


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    TA8272HQ TA8272HQ Sn-37Pb PDF

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


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    3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 PDF

    application of infrared intruder alarm

    Abstract: RPY96 pyroelectric sensor circuit for gas analysis RPY95 RPY89 pyroelectric amplifier circuit 741N m033u 302-592 "differential amplifier" pyroelectric
    Text: R S COMPONENTS LTD 22E J> 7SG3244 GG ODOb i 2 Issued March 1984 4743 & Æ /Ô /Sao timt. Pyroelectric detectors T '6 5 'H data Stock numbers 302-592/609/615 Features The ceramic pyroelectric detectors available in the R5 range see below are suitable for m any applica­


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    7SD3244 RPY95 RPY96 application of infrared intruder alarm RPY96 pyroelectric sensor circuit for gas analysis RPY89 pyroelectric amplifier circuit 741N m033u 302-592 "differential amplifier" pyroelectric PDF

    C311 Transistor

    Abstract: ELTEC INSTRUMENTS FET U 421
    Text: 421/5210 Parallel Opposed Dual Pyroelectric IR Detector with Internal Amplifier Manufactured under one or more of the following U. S. patents: 4,218,620 4,326,663 4,441,023 3,839,640 .040 SPACING 10 . JTl ELEMENTS. 1 .100 (2.5) \ -180 SQ WINDOW (46) Model 421 consists of two sepa­


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    til 701

    Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
    Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of


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    100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral PDF

    eltec

    Abstract: ELTEC INSTRUMENTS BOX9610 MOTION DETECTOR PARALLEL
    Text: 329404 1 EL T E C INSTRUMENTS ELTEC INSTRUMENTS INC 0 1E 0041 S' 01 421/5210 DE I 38^4041 □D0D41S Parallel Opposed Dual Pyroelectric IR Detector with Internal Amplifier E LS T E C Manufactured under one or more of the foBowing US, patents 3,839,640 - 4218,620 - 4,326,663 - 4,384,207 - 4.437,003 4/441,023 - 4,523,095


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    BOX9610 CH-8304 eltec ELTEC INSTRUMENTS MOTION DETECTOR PARALLEL PDF

    sample circuit

    Abstract: eltec ELTEC INSTRUMENTS sensitive vibration detector BOX9610
    Text: 329404 1 EL T E C INSTRUMENTS ELTEC INSTRUMENTS INC 0 1E 0041 S' 01 421/5210 DE I 38^4041 □D0D41S Parallel Opposed Dual Pyroelectric IR Detector with Internal Amplifier E LS T E C Manufactured under one or more of the foBowing US, patents 3,839,640 - 4218,620 - 4,326,663 - 4,384,207 - 4.437,003 4/441,023 - 4,523,095


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    BOX9610 CH-8304 sample circuit eltec ELTEC INSTRUMENTS sensitive vibration detector PDF

    ACTIVE INFRARED MOTION DETECTOR

    Abstract: Light dependent resistors
    Text: 419/519 Parallel Opposed Dual Pyroelectric IR Detector with Source Follower EurEC Manufactured under one or more of the following patents: 4,218,620 4,326,663 4,441,023 3,839,640 Model 419 consists of two physi­ cal ly separate Iithiumtantalate sen­ sing elements and a FET source


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    eltec 5192

    Abstract: eltec light dependent resistor circuit
    Text: ELTEC INSTRUMENTS INC BEE D • 3ST4041 0000553 b ■IEII 5192 E Ê JT E C Parallel Opposed Dual Pyroelectric IR Detector With Source Follower Manufactured under one or more of the following U.S. patents: 3,839,640 - 4218,620 - 4,326,663 - 4,384507 - 4.437,003 4,441,023 - 4,523.095


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    A47Kftorgreatervalue eltec 5192 eltec light dependent resistor circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: 0PA111 B U R R -B R O W N [ ] Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nvVfiz max 10kHz • LOW BIAS CURRENT: 1pA max • PRECISION INSTRUMENTATION • DATA ACQUISITION • LOW OFFSET: 250[iV max


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    0PA111 10kHz) 120dB 100dB OPA111 ZZ001 17313bS D027370 PDF

    hp 5082-4204 pin photodiode

    Abstract: 1506H HP 5082-4204 5082-4204 AD547 "zero-bias schottky diode" sd-041
    Text: B U R R - BR OU N 3ME CORP D • 17313bS Q O lfilS M B U R R -B R O W N b ■BUB OPA111 MILITARY AND DIE VERSIONS AVAILABLE Low Noise Precision Difet® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nWHz max 10kHz • LOW BIAS CURRENT: 1pA max


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    17313bS OPA111 10kHz) 120dB 100dB OPA111 -80dB 17313b5 10kHz 30kHz hp 5082-4204 pin photodiode 1506H HP 5082-4204 5082-4204 AD547 "zero-bias schottky diode" sd-041 PDF

    eltec 5192

    Abstract: eltec ELTEC INSTRUMENTS ACTIVE INFRARED MOTION DETECTOR
    Text: ELTEC INSTRUMENTS INC BEE D • 3ST4041 0000553 b ■IEII 5192 E Ê JT E C Parallel Opposed Dual Pyroelectric IR Detector With Source Follower Manufactured under one or more of the following U.S. patents: 3,839,640 - 4218,620 - 4,326,663 - 4,384507 - 4.437,003 4,441,023 - 4,523.095


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    A47Kftorgreatervalue eltec 5192 eltec ELTEC INSTRUMENTS ACTIVE INFRARED MOTION DETECTOR PDF