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    HIGH POWER IR EMITTER Search Results

    HIGH POWER IR EMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER IR EMITTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2013-10-24 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055

    Untitled

    Abstract: No abstract text available
    Text: IR Emitter and Detector LTR-C1903 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing


    Original     		PDF LTR-C1903 940nm 850nm 002/A4

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-08 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.2 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055

    OHF04132

    Abstract: SFH4232 SFH 4232
    Text: 2013-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 OHF04132 SFH4232 SFH 4232

    Untitled

    Abstract: No abstract text available
    Text: 2012-12-13 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4232A Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 11 K/W) Centroid wavelength 850 nm


    Original     		PDF JS-001-2011 D-93055

    Untitled

    Abstract: No abstract text available
    Text: 2013-10-24 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055

    SFH 4232

    Abstract: No abstract text available
    Text: 2014-01-08 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.2 SFH 4232 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 SFH 4232

    SFH4233

    Abstract: JS-001-2011
    Text: 2013-01-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 SFH4233 JS-001-2011

    AEC-Q101-REV-C

    Abstract: SFH4239
    Text: 2012-12-03 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4239 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 AEC-Q101-REV-C SFH4239

    4236

    Abstract: SFH4236
    Text: 2012-03-27 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4236 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 4236 SFH4236

    Untitled

    Abstract: No abstract text available
    Text: 2013-10-24 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055

    SFH4235

    Abstract: OHF04187
    Text: 2013-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4235 Features: Besondere Merkmale: • • • • • IR lightsource with high efficiency Double Stack emitter Low thermal resistance (Max. 9 K/W)


    Original     		PDF JS-001-2011 AEC-Q101-REV-C, D-93055 SFH4235 OHF04187

    IR Emitters

    Abstract: No abstract text available
    Text: HIGH-POWER GaAIAs IR EMITTERS OD-880W FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with silicon detectors • Wide range of linear power output


    OCR Scan     		PDF OD-880W 880nm IR Emitters

    IR Emitters

    Abstract: IR Diode
    Text: OD-880L HIGH-POWER GaAIAs IR EMITTERS FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with silicon detectors • Wide range of linear power output


    OCR Scan     		PDF OD-880L 880nm IR Emitters IR Diode

    IR Emitters

    Abstract: No abstract text available
    Text: OD-50L SUPER HIGH-POWER GaAIAs IR EMITTERS FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam • Standard 3-lead TO-39 hermetic package • 100% test for minimum power requirement


    OCR Scan     		PDF 880nm OD-50L OD-50L IR Emitters

    IR Emitters

    Abstract: No abstract text available
    Text: OD-880F HIGH-POWER GaAIAs IR EMITTERS .030 .040 FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880 nm peak emission for optimum matching with silicon detectors .015 1.00 MIN. " f


    OCR Scan     		PDF OD-880F OD-88O-C OD-88OF IR Emitters

    OD-100

    Abstract: No abstract text available
    Text: OPTO DIODE SSE D CORP • bAOl^fi □□□□11S 7T4 « O P D >-V/~ f.? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners


    OCR Scan     		PDF OD-100 880nm OD-100

    OD-50L

    Abstract: 880nm
    Text: OPTO DIODE CORP 5SE ]> • bfloma ÜQÜDIGT MTD m O P V SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50L FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam


    OCR Scan     		PDF QD-50L 880nm OD-50L 450mA OD-50L

    Untitled

    Abstract: No abstract text available
    Text: OPTO DIODE CORP SSE D • bflQlW 0DOD11S 714 ■ O P D / - V / W , ? SUPER HIGH-POWER GaAIAs IR EMITTERS OD-100 FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam


    OCR Scan     		PDF 0DOD11S OD-100 880nm OD-100

    Untitled

    Abstract: No abstract text available
    Text: OD-100 SUPER HIGH-POWER GaAIAs IR EMITTERS EPOXY FEATURES .014 • High reliability LPE Grown IR emitters .018 .130 MAX * t 500 • Ultra high power output • 880nm peak emission • Four wire bonded on die corners ANODE • Very uniform optical beam • Standard 3-lead TO-39 package


    OCR Scan     		PDF OD-100 880nm OD-100

    Untitled

    Abstract: No abstract text available
    Text: OPTO DIODE CORP SSE D • bflOmfl 0D00070 ?Tb M O P D ~ V ~ HIGH-POWER GaAIAs IR EMITTERS OD-880W FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with


    OCR Scan     		PDF 0D00070 OD-880W 880nm OD-88O-C OD-88OW OD-88OW

    Untitled

    Abstract: No abstract text available
    Text: OPTO DIODE CORP SSE D • bflGlRRfl D 0 0 D G 7 b i m «OPD HIGH-POWER GaAlAs IR EMITTERS OD-880F FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with


    OCR Scan     		PDF OD-880F 880nm OD-88O-C OD-88OF OD-88QF

    OD-50W

    Abstract: No abstract text available
    Text: OP T O DIODE 55E J> m CO R P b ô ümfl Ü0DD112 TñS • O P D 7 - SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50W FEATURES • High reliability LPE grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam


    OCR Scan     		PDF G0DD11S QD-50W 880nm OD-50W

    Untitled

    Abstract: No abstract text available
    Text: OPTO DIO DE CORP SSE D • bñUmfl 0 G 0 0 1 1 2 TÔS * 0 P D / - SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50W FEATURES • High reliability LPE grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very uniform optical beam


    OCR Scan     		PDF QD-50W 880nm OD-50W OD-50W