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    HIGH POWER MICROWAVE DEVICE Search Results

    HIGH POWER MICROWAVE DEVICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER MICROWAVE DEVICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high power fet amplifier schematic

    Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
    Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding


    Original     		PDF 30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal

    DH80154

    Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
    Text: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.


    Original     		PDF SH92103 SH91107 SH91207 SH90207 SH93103 DH80154 DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103

    TMD0708-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD0708-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz HIGH GAIN G1dB=22.0dB at 7.1GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TMD0708-2 2-11E1A) 000pF TMD0708-2

    TMD5872-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=34.0dBm at 5.8GHz to 7.2GHz HIGH GAIN G1dB=29.0dB at 5.8GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TMD5872-2 000pF 10-50F TMD5872-2

    TMD0507-2A

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TMD0507-2A 11E1A) 000pF TMD0507-2A

    TMD0305-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD0305-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 3.4GHz to 5.1GHz HIGH GAIN G1dB=22.0dB at 3.4GHz to 5.1GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TMD0305-2 000pF TMD0305-2

    CHA5093TCF/24

    Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
    Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


    Original     		PDF CHA5093TCF 24-26GHz 24-26GHz 29dBm DSCHA50932035 04-Feb CHA5093TCF/24 RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate

    LD79A02K

    Abstract: NEC RF Switch 1998 NEC RF Switch
    Text: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.


    Original     		PDF LD79A02K LD79A02K NEC RF Switch 1998 NEC RF Switch

    AN0005

    Abstract: CHA5093 CHA5093TCF
    Text: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


    Original     		PDF CHA5093TCF 22-26GHz 22-26GHz 28dBm DSCHA5093TCF1257 14-Sept-01- AN0005 CHA5093 CHA5093TCF

    PTB23006U

    Abstract: MLC718 SOT440A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors


    Original     		PDF PTB23006U SCA53 127147/00/02/pp12 PTB23006U MLC718 SOT440A

    E 1007

    Abstract: PTB23002U
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network


    Original     		PDF PTB23002U SCA53 127147/00/02/pp12 E 1007 PTB23002U

    CLX34

    Abstract: CLX34-00 CLX34-05 CLX34-10
    Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX34 CLX34-00 MWP-25 CLX34-05 CLX34-10 CLX34-nn: QS9000 CLX34 CLX34-00 CLX34-05 CLX34-10

    TMD1013-1-431

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C


    Original     		PDF TMD1013-1-431 000pF TMD1013-1-431

    TMD7185-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD7185-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz n HIGH GAIN G1dB=28.0dB at 7.1GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C


    Original     		PDF TMD7185-2 000pF TMD7185-2

    CLY38

    Abstract: CLY38-00 CLY38-05 CLY38-10
    Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY38 CLY38-00 MWP-35 CLY38-05 CLY38-10 CLY38-nn: QS9000 CLY38 CLY38-00 CLY38-05 CLY38-10

    CLY32

    Abstract: CLY32-00 CLY32-05 CLY32-10
    Text: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY32 CLY32-00 MWP-25 CLY32-05 CLY32-10 CLY32-nn: QS9000 CLY32 CLY32-00 CLY32-05 CLY32-10

    CLX32

    Abstract: CLX32-00 CLX32-05 CLX32-10
    Text: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX32 CLX32-00 MWP-25 CLX32-05 CLX32-10 CLX32-nn: QS9000 CLX32 CLX32-00 CLX32-05 CLX32-10

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10
    Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX27 CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27-nn: QS9000 CLX27 CLX27-00 CLX27-05 CLX27-10

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
    Text: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLY29. CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29 CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169
    Text: CLX27. HiRel X- Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		PDF CLX27. CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169

    TIM0910-20

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM0910-20 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=43.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		PDF TIM0910-20 TIM0910-20

    TMD1925-3

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=35.0dBm at 1.9GHz to 2.5GHz n HIGH GAIN G1dB=29.0dB at 1.9GHz to 2.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C


    Original     		PDF TMD1925-3 10-20pF 000pF TMD1925-3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Broadband Internally Matched PldB=33dBm at 5.1 to 7.2GHz ■ Hermetically Sealed Package High Gain GldB=22dB at 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF 33dBm TMD0507-2A 607-2A