high power fet amplifier schematic
Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding
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30FETs
20FETs
12-Watt
high power fet amplifier schematic
GaAs MESFET amplifier
fet amplifier schematic
x-band mmic core chip
MMIC X-band amplifier
x-band microwave fet
HPA Ku
x-band core chip
"high power microwave"
fet small signal
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DH80154
Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Text: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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SH92103
SH91107
SH91207
SH90207
SH93103
DH80154
DH80080
DH80106
DH80051
DH80055
dh80102
BH200
DH80100
DH80120
SH93103
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TMD0708-2
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD0708-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz HIGH GAIN G1dB=22.0dB at 7.1GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD0708-2
2-11E1A)
000pF
TMD0708-2
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TMD5872-2
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=34.0dBm at 5.8GHz to 7.2GHz HIGH GAIN G1dB=29.0dB at 5.8GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD5872-2
000pF
10-50F
TMD5872-2
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TMD0507-2A
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD0507-2A
11E1A)
000pF
TMD0507-2A
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TMD0305-2
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD0305-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 3.4GHz to 5.1GHz HIGH GAIN G1dB=22.0dB at 3.4GHz to 5.1GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD0305-2
000pF
TMD0305-2
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CHA5093TCF/24
Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,
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CHA5093TCF
24-26GHz
24-26GHz
29dBm
DSCHA50932035
04-Feb
CHA5093TCF/24
RO4003
CHA5093TCF
AN0005
Rogers RO4003 substrate
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LD79A02K
Abstract: NEC RF Switch 1998 NEC RF Switch
Text: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.
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LD79A02K
LD79A02K
NEC RF Switch 1998
NEC RF Switch
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AN0005
Abstract: CHA5093 CHA5093TCF
Text: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,
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CHA5093TCF
22-26GHz
22-26GHz
28dBm
DSCHA5093TCF1257
14-Sept-01-
AN0005
CHA5093
CHA5093TCF
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PTB23006U
Abstract: MLC718 SOT440A
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors
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PTB23006U
SCA53
127147/00/02/pp12
PTB23006U
MLC718
SOT440A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Broadband Internally Matched PldB=33dBm at 5.1 to 7.2GHz ■ Hermetically Sealed Package High Gain GldB=22dB at 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C
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33dBm
TMD0507-2A
607-2A
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E 1007
Abstract: PTB23002U
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network
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PTB23002U
SCA53
127147/00/02/pp12
E 1007
PTB23002U
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CLX34
Abstract: CLX34-00 CLX34-05 CLX34-10
Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX34
CLX34-00
MWP-25
CLX34-05
CLX34-10
CLX34-nn:
QS9000
CLX34
CLX34-00
CLX34-05
CLX34-10
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TMD1013-1-431
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C
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TMD1013-1-431
000pF
TMD1013-1-431
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CLY35
Abstract: CLY35-00 CLY35-05 CLY35-10
Text: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY35
CLY35-00
MWP-35
CLY35-05
CLY35-10
CLY35-nn:
QS9000
CLY35
CLY35-00
CLY35-05
CLY35-10
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CLY38
Abstract: CLY38-00 CLY38-05 CLY38-10
Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY38
CLY38-00
MWP-35
CLY38-05
CLY38-10
CLY38-nn:
QS9000
CLY38
CLY38-00
CLY38-05
CLY38-10
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CLY32
Abstract: CLY32-00 CLY32-05 CLY32-10
Text: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY32
CLY32-00
MWP-25
CLY32-05
CLY32-10
CLY32-nn:
QS9000
CLY32
CLY32-00
CLY32-05
CLY32-10
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CLX32
Abstract: CLX32-00 CLX32-05 CLX32-10
Text: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX32
CLX32-00
MWP-25
CLX32-05
CLX32-10
CLX32-nn:
QS9000
CLX32
CLX32-00
CLX32-05
CLX32-10
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CLX27
Abstract: CLX27-00 CLX27-05 CLX27-10
Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX27
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27-nn:
QS9000
CLX27
CLX27-00
CLX27-05
CLX27-10
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CLY29
Abstract: CLY29-00 CLY29-05 CLY29-10
Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY29
CLY29-00
MWP-25
CLY29-05
CLY29-10
CLY29-nn:
QS9000
CLY29
CLY29-00
CLY29-05
CLY29-10
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CLY29
Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
Text: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLY29.
CLY29-00
MWP-25
CLY29-05
CLY29-10
CLY29
CLY29-00
CLY29-05
CLY29-10
GMW05880
IDp12
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CLX27
Abstract: CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169
Text: CLX27. HiRel X- Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application
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CLX27.
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27
CLX27-00
CLX27-05
CLX27-10
GMW05880
049 01169
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TIM0910-20
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TIM0910-20 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED P1dB=43.0dBm at 9.5GHz to 10.5GHz HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C
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TIM0910-20
TIM0910-20
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TMD1925-3
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=35.0dBm at 1.9GHz to 2.5GHz n HIGH GAIN G1dB=29.0dB at 1.9GHz to 2.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C
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TMD1925-3
10-20pF
000pF
TMD1925-3
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