Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5
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SST12LP15A
SST12LP15A
16contact
DS75056A
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SST12CP11
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the
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SST12CP11
SST12CP11
DS75054A
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Untitled
Abstract: No abstract text available
Text: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V
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RF3163
RF3164
RF3164
IS-95/CDMA
RF3163
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Untitled
Abstract: No abstract text available
Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire
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SST11LP12
SST11LP12
16-contact
DS75047A
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HT40
Abstract: "channel estimation"
Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire
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SST11LP12
SST11LP12
16-contact
DS75047A
HT40
"channel estimation"
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB
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SST12LP15B
SST12LP15
SST12LP15
16-contact
DS75030A
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16-vqfn-3x3-QVC-2
Abstract: SST12LP15B microchip at 2.45 GHz gp1215
Text: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB
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SST12LP15B
SST12LP15
SST12LP15
16-contact
DS75030A
16-vqfn-3x3-QVC-2
SST12LP15B
microchip at 2.45 GHz
gp1215
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2SD1073
Abstract: No abstract text available
Text: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1073
O-220AB
SC-46
2SD1073
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2SD1073
Abstract: No abstract text available
Text: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1073
O-220AB
SC-46
2SD1073
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tdk LAMBDA supply Circuit diagram
Abstract: rectifier module circuit diagram 48vdc circuits 4h35 Nippon Chemi-Con LXV LAMBDA los 28v series Nemic-Lambda GmbH Nippon capacitors tdk lambda power supply
Text: PAH450S Series Compact and high-power DC/DC Power-module The new era for base station transmission amplifiers: Compact and high-power output PAH450S Series Compact and high-power DC/DC Power-module actual size PAH450S Series High efficiency: 92% - top level in the industry
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PAH450S
PAH450S48
PAH350S48)
PAF500F48)
48Vin
semic5000
PAH450S48-0706E
tdk LAMBDA supply Circuit diagram
rectifier module circuit diagram 48vdc circuits
4h35
Nippon Chemi-Con LXV
LAMBDA los 28v series
Nemic-Lambda GmbH
Nippon capacitors
tdk lambda power supply
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lm3875
Abstract: LM3875 Overture Audio Power Amplifier Series
Text: LM3875 LM3875 Overture Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier Literature Number: SNAS083C LM3875 Overture Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier General Description Features The LM3875 is a high-performance audio power amplifier
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LM3875
LM3875
SNAS083C
20kHz.
LM3875,
LM3875 Overture Audio Power Amplifier Series
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SE2576L
Abstract: se2576 sige SE2576L-R SE2576L-EK1 IEEE802 SIGE SEMICONDUCTOR
Text: SE2576L 2.4 GHz High Power Wireless LAN Power Amplifier Preliminary Applications Product Description The SE2576L is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2576L
SE2576L
11bgn
IEEE802
26dBm
se2576
sige
SE2576L-R
SE2576L-EK1
SIGE SEMICONDUCTOR
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Data Sheet SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
16F-6,
S71321-02-000
JEP95
SST12LP07
SST12LP07-QVCE
SST12LP07-QVCE-K
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
S71321-00-000
JEP95
SST12LP07
SST12LP07-QVCE
SST12LP07-QVCE-K
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
S71321-00-000
JEP95
SST12LP07
SST12LP07-QVCE
SST12LP07-QVCE-K
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MSC8004
Abstract: No abstract text available
Text: MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W TYP @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers
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MSC8004
MSC8004
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n
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SST12LP19E
11b/g/n
DS70005041C
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2565T
Abstract: SE2565T-EV1 SE2565T-EK1 se2565 SE2565T
Text: SE2565T 2.4 GHz High Power Wireless LAN Power Amplifier Preliminary Applications Product Description The SE2565T is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2565T
IEEE802
SE2565T
11bgn
23dBm
DST-00265
2565T
SE2565T-EV1
SE2565T-EK1
se2565
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Untitled
Abstract: No abstract text available
Text: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for
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RF5198
RF5184
RF5184
RF5198)
RF5184)
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SE2604L
Abstract: 2604L SE2604L-EV1 SE2604L-EK1 SE2604 HT20 HT40 JESD22-A114 SE2604L-R
Text: SE2604L 2.4 GHz High Power Wireless LAN Power Amplifier Preliminary Applications Product Description The SE2604L is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2604L
SE2604L
11bgn
IEEE802
23dBm
2604L
SE2604L-EV1
SE2604L-EK1
SE2604
HT20
HT40
JESD22-A114
SE2604L-R
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se2576
Abstract: 2576L sige 2576L SE2576L SE2576L-EV1 SE2576L-EK1 se2576L-R PDVP30
Text: SE2576L 2.4 GHz High Power Wireless LAN Power Amplifier Preliminary Applications Product Description The SE2576L is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2576L
IEEE802
SE2576L
11bgn
26dBm
DST-00260
se2576
2576L
sige 2576L
SE2576L-EV1
SE2576L-EK1
se2576L-R
PDVP30
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SE2565T
Abstract: SE2565T-R SE2565T-EK1
Text: SE2565T 2.4 GHz High Power Wireless LAN Power Amplifier Preliminary Applications Product Description The SE2565T is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2565T
SE2565T
11bgn
IEEE802
23dBm
SE2565T-R
SE2565T-EK1
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2N5631
Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Text: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com
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2N5631
2N5631/D
2N5631
high power 500 watts audio amplifier
power transistor
power transistor audio amplifier 500 watts
200 watt audio amplifier with ic
300 watts audio amplifier
NPN 200 VOLTS POWER TRANSISTOR
1N5825
2N6031
MSD6100
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2576L
Abstract: se2576 SE2576L se2576L-R sige 2576L SE2576L-EV1
Text: DATA SHEET SE2576L: 2.4 GHz High Power Wireless LAN Power Amplifier Applications • • Product Description The SE2576L is a high power 802.11bgn WLAN power amplifier module providing the functionality of the power amplifier, power detector, reference voltage
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SE2576L:
IEEE802
SE2576L
11bgn
26dBm
DST-00260
2576L
se2576
se2576L-R
sige 2576L
SE2576L-EV1
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