selenium rectifier bridge
Abstract: high voltage high current bridge rectifier movs full wave rectifier diodes high voltage bridge rectifier selenium high voltage diodes cke scr
Text: HIGH POWER, HIGH VOLTAGE HIGH POWER, LOW VOLTAGE We Have You Covered! STANDARD & CUSTOM SEMICONDUCTOR ASSEMBLIES HIGH VOLTAGE SILICON RECTIFIERS • High Current/ High Voltage Silicon Rectifiers ■ MOVs ■ Selenium ■ Assemblies ■ High Voltage Diodes
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dh200
Abstract: DH294 Dh252 DH270 f60D
Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
S268-W1
f60D
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DH292
Abstract: No abstract text available
Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
M208b
DH292
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DH294
Abstract: DH200 DH270 DH256 Dh252 varactor multiplier dh110 DH292 DH293 M208B
Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
M208b
varactor multiplier
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E13005D-213
Abstract: E13005D
Text: E13005D-213 Pb Free Plating Product Pb E13005D-213 MJE Power Transistor with Damping Diode MJE13005 series Product specification Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power
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E13005D-213
MJE13005
E13005D-213
E13005D
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2N6079
Abstract: No abstract text available
Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics
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2N6079
2N6079
com/2n6079
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BU108
Abstract: 2SA1046 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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2N5745
2N4398)
2N5758
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
2SA1046
BDX54
BU326
BU100
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DH80210
Abstract: DH80154 BH200 DH80189 DH80120 EH80204 EH80083 EH80182 BH301 DH80209
Text: SILICON PIN DIODES High voltage PIN diodes Silicon PIN diodes for switching & phase shifting applications medium & high power Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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BH300
BH300
BH200
BH200
DH80210
DH80154
DH80189
DH80120
EH80204
EH80083
EH80182
BH301
DH80209
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EH80083
Abstract: EH80204 DH80154
Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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BH141
BH141
BH301
BH300
BH300
BH202N
EH80083
EH80204
DH80154
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DH80154
Abstract: DH80080
Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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conditi27d
BH141
BH141
BH301
BH300
BH300
DH80154
DH80080
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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BUX41
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC1629 equivalent
BDX54
BU326
BU100
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MJ2955 replacement
Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power
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BUT33
BUT33
204AE
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJ2955 replacement
diode T 3512 H
BD581
free transistor equivalent book 2sc789
BU108
motorola diode cross reference
MJE-3439
tip122 pin configuration
2SA756
BU104P
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BUT34 equivalent
Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power
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BUT34
BUT34
204AE
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUT34 equivalent
BU323A equivalent
2N3055
BU108
2SA1046
BUV22 equivalent
TIP34C equivalent
bc 574 transistor
BU326
BU100
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BU108
Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A
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BUV20
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
2SC194
transistor Bc 574
2SC1419
BU326
BU100
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2N4922
Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A
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BUV23
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2N4922
BU108
2SB655
BD390
MJ11021
2sb557
BDX54
2n6107 MOTOROLA
2SC1943
MJE2482
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BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
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BUV21
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
BU108
transistor Bc 574
2n6107 MOTOROLA
2SC1943
MJ3055 to220
2SC1419
BU326
BU100
MJ*15033
2N6277
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TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
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BUV11
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP34C equivalent
BU108
TRANSISTOR BC 384
5D2 6
BUV11 equivalent
BDX54
2N3025 equivalent
BU326
BU100
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SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output
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RJS6005TDPP;
0212/100/in-house/LAH/JE
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
application notes frd
silicon carbide
RJS6004TDPN-E0
rju60c6
2202L
RJU6052SDPD-E0
RJU60C3SDPD-E0
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GC4412
Abstract: No abstract text available
Text: Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4400
MIL-S-19500.
GC4500,
GC4200,
GC4300
GC4412
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GC4430
Abstract: High Speed Switches GC4432-30 Types of Radar Antenna GC4400 GC4413 GC4410 GC4411 GC4412 GC4431
Text: Semiconductor Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by
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GC4400
MIL-S-19500.
GC4500,
GC4200,
GC4300
GC4430
High Speed Switches
GC4432-30
Types of Radar Antenna
GC4413
GC4410
GC4411
GC4412
GC4431
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MPN7420
Abstract: MPN7360
Text: High Power PIN Diodes Description Features These Metelics high power silicon mesa PIN chips are glass passivated for high voltage, high power applications demanding good reliability and resistance to moisture. • • • High Voltage Breakdown to 800 Volts
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MIL-PRF-19500
MPN7453A
MPN7453B
MPN7453C
MPN7420
MPN7330
MPN7360
MPN7370
MPN7380
A17002
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400V switching transistor
Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
Text: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast
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NTE2315
NTE2315
400VC
500mA,
400V switching transistor
npn darlington 400v 15a
NPN Transistor 10A 400V
Displays
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tektronix 475
Abstract: motorola bipolar transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 Designer’s Data Sheet 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT33 Darlington transistor is designed for high-voltage, high-speed, power
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BUT33
BUT33
tektronix 475
motorola bipolar transistor
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but34
Abstract: Motorola Bipolar Power Transistor Data darling
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power
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BUT34
BUT34
Motorola Bipolar Power Transistor Data
darling
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