1ghz bjt
Abstract: rf mems switch FMS2016 FMS2016-001 MIL-HDBK-263
Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
|
Original
|
FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SB
FMS2016-001SQ
FMS2016-001-EB
DS090608
1ghz bjt
rf mems switch
FMS2016
MIL-HDBK-263
|
PDF
|
FMS2016-001
Abstract: MIL-HDBK-263 rf mems switch using Power Handling
Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
|
Original
|
FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001-EB
DS100730
MIL-HDBK-263
rf mems switch using Power Handling
|
PDF
|
rf power amplifier 100w
Abstract: 100W POWER AMPLIFIER
Text: 409V-3519 - Hermetically Sealed, High Power SPDT Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.
|
Original
|
09V-3519
09V-3519)
rf power amplifier 100w
100W POWER AMPLIFIER
|
PDF
|
TO metal package aluminum kovar
Abstract: No abstract text available
Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.
|
Original
|
09V-3519
09V-3519)
-55oC
TO metal package aluminum kovar
|
PDF
|
TO metal package aluminum kovar
Abstract: No abstract text available
Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.
|
Original
|
09V-3519
09V-3519)
-55oC
TO metal package aluminum kovar
|
PDF
|
A004R
Abstract: ALM-40220 RO4350 diode 944 1334
Text: ALM-40220 2.010GHz – 2.025GHz TD-SCDMA 10 Watt High Power SPDT Switch Data Sheet Description Features Avago Technologies’ ALM-40220 is a high power SPDT switch with 10W power handling capability, high linearity performance, low insertion loss and fast switching speed
|
Original
|
ALM-40220
010GHz
025GHz
ALM-40220
50ohm
AV02-1868EN
A004R
RO4350
diode 944 1334
|
PDF
|
FMS2014-001
Abstract: FMS2014QFN
Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die
|
Original
|
FMS2014-001
FMS2014-001
FMS2014-001SR
FMS2014-001SB
DS090608
FMS2014-001SQ
FMS2014-001-EB
FMS2014QFN
|
PDF
|
FMS2014-001
Abstract: FMS2014QFN RFmd SPDT rf mems switch
Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die
|
Original
|
FMS2014-001
FMS2014-001
FMS2014-001SR
FMS2014-001-EB
DS100730
FMS2014-001SQ
FMS2014QFN
RFmd SPDT
rf mems switch
|
PDF
|
RF1200
Abstract: RFmd SPDT rfmd qfn package 2x2 6-pin SPDT HIGH POWER
Text: RFMD RF1200 Broadband High Power SPDT Switch The RF1200 is a single-pole double-throw SPDT high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity and very good harmonic characteristics. It is fabricated in a
|
Original
|
RF1200
RF1200
900MHz)
RFmd SPDT
rfmd qfn package
2x2 6-pin
SPDT HIGH POWER
|
PDF
|
A114 es
Abstract: No abstract text available
Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die
|
Original
|
FMS2014-001
FMS2014-001
FMS2014-001SR
FMS2014-001SQ
FMS2014-001-EB
DS130506
J-STD-020C,
A114 es
|
PDF
|
2Ghz operating jfet
Abstract: CXG1006N 8 pin 4v power supply ic High Power Antenna Switch 8 pin 4v power switch ic
Text: CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation
|
Original
|
CXG1006N
CXG1006N
32dBm
34dBm
SSOP-8P-L01
SSOP008-P-0044
2Ghz operating jfet
8 pin 4v power supply ic
High Power Antenna Switch
8 pin 4v power switch ic
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
|
Original
|
RF1200
RF1200broadband
-80dBc
RF1200
1900MHz
DS101202
|
PDF
|
Y parameters of rf bjt
Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
|
Original
|
RF1200
RF1200broadband
-80dBc
11b/g
RF1200
1900MHz
DS101202
Y parameters of rf bjt
RF1200PCBA-410
high power SPDT
1ghz bjt RF
HDR1X2
|
PDF
|
10PIN
Abstract: CXG1134EN
Text: CXG1134EN High Power SPDT Switch with Logic Control Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs
|
Original
|
CXG1134EN
CXG1134EN
900MHz,
70dBm
10-pin
VSON-10P-01
10PIN
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CXG1134EN High Power SPDT Switch with Logic Control For the availability of this product, please contact the sales office. Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be
|
Original
|
CXG1134EN
CXG1134EN
900MHz,
70dBm
10-pin
VSON-10P-01
|
PDF
|
ES0189
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION PS-ES0189 REV - MODEL NO.ES0189 SPDT SWITCH = PARAMETER 1.0 High Power Input Specifications 1.1 Frequency Range 1.2 Power, Peak nominal 1.3 Power, Average (nominal)
|
Original
|
PS-ES0189
ES0189
ES0189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGS2352 DC – 12 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 12 GHz Input Power: up to 20 W Insertion Loss: < 1 dB Isolation: -35 dB typical
|
Original
|
TGS2352
TGS2352
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical
|
Original
|
TGS2353
TGS2353
|
PDF
|
TGS2351
Abstract: high power SPDT EAR99 JESD22-A114 triquint SPDT 2002
Text: TGS2351 DC – 6 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 6 GHz Power Handling: up to 40 W Insertion Loss: < 0.8 dB Isolation: -40 dB typical
|
Original
|
TGS2351
TGS2351
high power SPDT
EAR99
JESD22-A114
triquint SPDT 2002
|
PDF
|
EAR99
Abstract: JESD22-A114 high power SPDT TGS2353
Text: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical
|
Original
|
TGS2353
TGS2353
EAR99
JESD22-A114
high power SPDT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SONY CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMiC. This !C is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation
|
OCR Scan
|
CXG1006N
CXG1006N
32dBm
34dBm
CXQ1006N
SSOP00ft.
A3A2363
|
PDF
|
Untitled
Abstract: No abstract text available
Text: >ONY I_ CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation
|
OCR Scan
|
CXG1006N
CXG1006N
32dBm
34dBm
SSOP-8P-L01
SSOP008-P-0044
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SONY CXG1016N High-Frequency SPDT Antenna Switch Description The CXG1016N is a high power antenna switch MMIC. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive power supply Features • Single positive power supply operation
|
OCR Scan
|
CXG1016N
CXG1016N
SSOP-8P-L01
SSOP008-P-0044
|
PDF
|
hc84
Abstract: HC-89 HC86 HC-54 HC-69 kdi switch HC-96
Text: MEDIUM/HIGH POWER CW SPOT SWITCH ES SERIES HC REFLECTIVE GENERAL INFORMATION: KDI/Triangle Electronics SPDT RF switches, Series HC, ^mploy carefully selected high power diodes that are soldered to the metal housing, assur ing excellent electrical performance and CW power handling capability.
|
OCR Scan
|
100mA
hc84
HC-89
HC86
HC-54
HC-69
kdi switch
HC-96
|
PDF
|
