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    HIGH POWER TRANSISTOR MOSFET Search Results

    HIGH POWER TRANSISTOR MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF278C Rochester Electronics VHF power MOS transistor Visit Rochester Electronics Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER TRANSISTOR MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rd15hvf

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz rd15hvf

    rd15hvf

    Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz Oct2011 rd15hvf RF Transistor s-parameter 30W transistor d 1302

    diode marking SJ

    Abstract: JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R070C6 diode marking SJ JESD22

    65C6070

    Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R070C6 726-IPW65R070C6 65C6070 infineon MOSFET parameter test diode marking SJ 65C6 ipw65r

    6r041c6

    Abstract: IPW60R041C6 ipw60r041 6r041c6 mosfet data 6R041 JESD22 if444 TO-247-3
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.1, 2010-07-12 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW60R041C6 6r041c6 IPW60R041C6 ipw60r041 6r041c6 mosfet data 6R041 JESD22 if444 TO-247-3

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22

    6R070C6

    Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW60R070C6 6R070C6 6R070C6 MOSFET TRANSISTOR IPW60R070C6 infineon MOSFET parameter test c6 transistor JESD22

    65F6080

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R080CFD 65F6080

    6r1k4c6

    Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R1K4C6 6r1k4c6 IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11

    65F6080

    Abstract: ipw65r080
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R080CFD 65F6080 ipw65r080

    65F6080

    Abstract: ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R080CFD 65F6080 ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r

    6r2k0c6

    Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R2K0C6 6r2k0c6 IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPW65R070C6

    Transistor C G 774 6-1

    Abstract: 100OHM RD45HMF1 Transistor C 1279
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz RD45HMF1-101 Transistor C G 774 6-1 100OHM Transistor C 1279

    RD70HHF

    Abstract: RD70HHF1 mosfet HF amplifier idq10
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		PDF RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF mosfet HF amplifier idq10

    RD15HVF1

    Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1

    RD15HVF1

    Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		PDF RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w

    RD70HVF

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF

    RD60HUF1

    Abstract: 100OHM ZO-10 Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz 100OHM ZO-10 Rf power transistor mosfet

    100OHM

    Abstract: RD45HMF1 TRANSISTOR HANDLING 2A A 107 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers


    Original     		PDF RD45HMF1 900MHz RD45HMF1 900MHz-band 900MHz 800-900MHz 100OHM TRANSISTOR HANDLING 2A A 107 transistor

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		PDF RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w

    RD60HUF1-101

    Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.


    Original     		PDF RD60HUF1 520MHz RD60HUF1 520MHz RD60HUF1-101 RD60HUF1-101 Rf power transistor mosfet UHF transistor FET 100OHM PINw10 transistor A 1568 mitsubishi 250