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    HIGH SPEED SMALL SIGNAL TRANSISTOR Search Results

    HIGH SPEED SMALL SIGNAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH SPEED SMALL SIGNAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3725

    Abstract: No abstract text available
    Text: 2N3725 NPN Small Signal High Current High Speed Switch. 0.79 Transis. 1 of 1 Home Part Number: 2N3725 Online Store 2N3725 Diodes NPN Sm all Signal High C urrent High Speed Sw it c h. Transistors Enter code INTER3 at


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    PDF 2N3725 com/2n3725 2N3725

    2N4014

    Abstract: No abstract text available
    Text: 2N4014 NPN Small Signal High Current High Speed Switch. 1.65 Transis. 1 of 2 Home Part Number: 2N4014 Online Store 2N4014 Diodes NPN Sm all Signal High C urrent High Speed Sw it c h. Transistors Enter code INTER3 at


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    PDF 2N4014 com/2n4014 2N4014

    shd4322

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD432102D TECHNICAL DATA DATA SHEET 952, REV. A Formerly Part Number SHD4322 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.


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    PDF SHD4322 SHD432102D S-100 shd4322

    09 66 563 681

    Abstract: silicon npn planar rf transistor sot 143 BFS17A ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17AR
    Text: BFS17A/BFS17AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain D Small collector capacitance


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    PDF BFS17A/BFS17AR BFS17A BFS17AR D-74025 17-Apr-96 09 66 563 681 silicon npn planar rf transistor sot 143 ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ

    shd4323

    Abstract: No abstract text available
    Text: SHD432003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 845, REV. A Formerly part number SHD4323 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A DUAL, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-6 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR


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    PDF SHD4323 SHD432003 shd4323

    package LCC-3

    Abstract: shd4313
    Text: SHD431003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 844, REV. A Formerly part number SHD4313 SMALL SIGNAL, HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A SINGLE, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR


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    PDF SHD4313 SHD431003 package LCC-3 shd4313

    Untitled

    Abstract: No abstract text available
    Text: SHD431003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 844, REV. – Formerly part number SHD4313 SMALL SIGNAL, HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A SINGLE, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR


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    PDF SHD4313 SHD431003

    Untitled

    Abstract: No abstract text available
    Text: SHD432003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 845, REV. B Formerly part number SHD4323 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR DESCRIPTION: A DUAL, SMALL SIGNAL NPN TRANSISTOR IN A CERAMIC LCC-6 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR


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    PDF SHD4323 SHD432003

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC4942 Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage


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    PDF 2SC4942 to120

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR 2N3019CSM • High Voltage, High Current Small Signal NPN Transistor. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available


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    PDF 2N3019CSM 500mW 86mW/Â

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON TRANSISTOR 2N3019CSM • High Voltage, High Current Small Signal NPN Transistor. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available


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    PDF 2N3019CSM 500mW

    2SC4942

    Abstract: marking aa2
    Text: Transistors SMD Type NPN Silicon Transistors 2SC4942 Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage


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    PDF 2SC4942 to120 2SC4942 marking aa2

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


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    PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198

    LM6121H

    Abstract: LM632 lm6221 lm6121
    Text: LM6121,LM6221,LM6321 LM6121/LM6221/LM6321 High Speed Buffer Literature Number: SNOSC10B LM6121/LM6221/LM6321 October 3, 2011 High Speed Buffer General Description Features These high speed unity gain buffers slew at 800 V/ s and have a small signal bandwidth of 50 MHz while driving a


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    PDF LM6121 LM6221 LM6321 LM6121/LM6221/LM6321 SNOSC10B LH0002 LM6121H LM632

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


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    PDF 2N3019DCSM 500mW MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


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    PDF 2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET For switching circuits • Package ■ Features • High-speed switching • Small drive current owing to high input inpedance • High electrostatic breakdown voltage


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    PDF 2002/95/EC) 2SK0665G

    2SK0656

    Abstract: 2SK656 MS50K
    Text: Silicon MOSFETs Small Signal 2SK0656 (2SK656) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Small drive current owing to high input inpedance


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    PDF 2SK0656 2SK656) 2SK0656 2SK656 MS50K

    mmbt7002

    Abstract: mmbt7002 sot-23
    Text: MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS ON • Voltage controlled small signal switching • High saturation current capability • High speed switching Drain Gate 1.Gate 2.Source 3.Drain


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    PDF MMBT7002 OT-23 mmbt7002 mmbt7002 sot-23

    BAV234

    Abstract: BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES ratings type number characteristics Vr max. V Ip max. (mA) BA220 BA221 BA316 BA317


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    PDF BA220 BA221 BA316 BA317 BA318 BAV10 BAV18 BAV19 BAV20 BAV21 BAV234 BAS616 diode BAV105 BAV991 1PS193 BAL74W "Philips Semiconductors" BAX DO-35 BAS678 BAW62 SOT23 PMBD914

    BAV105

    Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30


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    PDF DO-35 DO-34 OD123 OD80C OD110 OT143 OT323/ BAW62/ BAV21 BAV10 BAV105 BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VN0610LL Small-Signal Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS N-CHANNEL SMALL-SIGNAL TMOS FET rDS on = 5 OHMS 60 VOLTS . . . are designed fo r high volta g e , high speed a pp lica tio n s such as


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    PDF VN0610LL

    2N3640

    Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
    Text: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed


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    PDF 2N4208 2N2409 2N5910 2N2894A 65-1025B 050BSC 100BSC 27BSC 54BSC 2N3640 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894

    2SC5187

    Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
    Text: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller


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    PDF 250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y