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    HIGH TEMPERATURE REVERSE BIAS IGBT Search Results

    HIGH TEMPERATURE REVERSE BIAS IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH TEMPERATURE REVERSE BIAS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pj 69 diode

    Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
    Text: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU


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    PDF LeicestershireLE17 Vo145 p1595 ICSCRM99) 0-7803-6404-X/00/ pj 69 diode shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C

    2MBI200TA-060

    Abstract: ED-4701 2MBI200 MT6M4057 5291
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI200TA-060 Spec. No. : MS5F 5291 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi Oct. 23 ’02 T.Miyasaka K.Yamada T.Fujihira MS5F 5291 a 1 14 H04-004-07 Revised Records Date Classification


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    PDF 2MBI200TA-060 H04-004-07 P7/14) H04-004-06 H04-004-03 2MBI200TA-060 ED-4701 2MBI200 MT6M4057 5291

    2MBI300TA-060

    Abstract: ED-4701 2mbi300ta IC600A
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI300TA-060 Spec. No. : MS5F 5292 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi Oct. 23 ’02 T.Miyasaka K.Yamada T.Fujihira MS5F 5292 a 1 14 H04-004-07 Revised Records Date Classification


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    PDF 2MBI300TA-060 H04-004-07 P7/14) H04-004-06 H04-004-03 2MBI300TA-060 ED-4701 2mbi300ta IC600A

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT

    6MBI75UC-120

    Abstract: ED-4701
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UC-120 Spec. No. : MS5F 5350 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 10 ’03 Y.Kobayashi Jan. 10 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F 5350 a 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI75UC-120 H04-004-07 P4/13 H04-004-06 H04-004-03 6MBI75UC-120 ED-4701

    2MBI400TB-060

    Abstract: ED-4701 2mbi400tb 2MBI400TB060
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification


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    PDF 2MBI400TB-060 H04-004-07 P7/14) P11/14, H04-004-03 2MBI400TB-060 ED-4701 2mbi400tb 2MBI400TB060

    2MBI400TB-060

    Abstract: ED-4701 5293
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi T.Fujihira Oct. 23 ’02 T.Miyasaka K.Yamada MS5F 5293 a b 1 14 H04-004-07 Revised Records Date Classification


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    PDF 2MBI400TB-060 H04-004-07 P7/14) P11/14 H04-004-03 2MBI400TB-060 ED-4701 5293

    6MBI100UC-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI100UC-120 Spec. No. : MS5F 5351 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka K.Yamada T.Fujihira MS5F 5351 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI100UC-120 H04-004-07 H04-004-06 H04-004-03 6MBI100UC-120 ED-4701 MT5F12959

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    PDF T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI100UB-120 Spec. No. : MS5F 5314 Fuji Electric Co.,Ltd. Matsumoto Factory Nov. 08 ’02 S.Yoshiwatari Nov. 08 ’02 T.Miyasaka T.Fujihira K.Yamada MS5F 5314 a 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI100UB-120 H04-004-07 H04-004-06 H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 4MBI100T-060 Spec. No. : MS5F 5431 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira MS5F 5431 1 14 H04-004-07 Revised Records Date


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    PDF 4MBI100T-060 H04-004-07 H04-004-06 H04-004-03

    4MBI200T-060

    Abstract: ED-4701
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 4MBI200T-060 Spec. No. : MS5F 05498 Fuji Electric Co.,Ltd. Matsumoto Factory Jun 16 ‘03 K.Muramatsu Jun 17 ‘03 T.Miyasaka T.Fujihira K.Yamada MS5F 05498 1 14 H04-004-07 Revised Records Date Classification


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    PDF 4MBI200T-060 H04-004-07 H04-004-06 H04-00enforce H04-004-03 4MBI200T-060 ED-4701

    6MBI150UB-120

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI150UB-120 Spec. No. : MS5F 5315 Fuji Electric Co.,Ltd. Matsumoto Factory Nov. 08 ’02 S.Yoshiwatari T.Fujihira Nov. 08 ’02 T.Miyasaka K.Yamada MS5F 5315 a 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI150UB-120 H04-004-07 H04-004-06 H04-004-03 6MBI150UB-120

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka K.Yamada T.Fujihira MS5F 5354 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI75UA-120 H04-004-07 H04-004-06 H04-004-03

    4MBI150T-060

    Abstract: ED-4701
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 4MBI150T-060 Spec. No. : MS5F 05550 Fuji Electric Co.,Ltd. Matsumoto Factory Aug 27 ’03 K.Muramatsu Aug 27 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F 05550 1 14 H04-004-07 Revised Records Date Classification


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    PDF 4MBI150T-060 H04-004-07 Aug-27- H04-004-06 H04-004enforce H04-004-03 4MBI150T-060 ED-4701

    4MBI75T-060

    Abstract: ED-4701 4MBI75 03S30
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 4MBI75T-060 Spec. No. : MS5F 5432 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira MS5F 5432 1 14 H04-004-07 Revised Records Date


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    PDF 4MBI75T-060 H04-004-07 H04-004-06 H04-004-03 4MBI75T-060 ED-4701 4MBI75 03S30

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI300U-120 Spec. No. : MS5F 5358 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 12 '03 S.Yoshiwatari Feb. 12 '03 T.Miyasaka K.Yamada T.Fujihira MS5F 5358 1 14 H04-004-07 Revised Records Date Classification


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    PDF 6MBI300U-120 H04-004-07 H04-004-06 H04-004-03

    6MBI100UB-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI100UB-120 Spec. No. : MS5F 5314 Fuji Electric Co.,Ltd. Matsumoto Factory Nov. 08 ’02 S.Yoshiwatari Nov. 08 ’02 T.Miyasaka T.Fujihira K.Yamada MS5F 5314 a b 1 13 H04-004-07 Revised Records Date Classification


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    PDF 6MBI100UB-120 H04-004-07 P4/13 H04-004-03 6MBI100UB-120 ED-4701 MT5F12959

    6MBI450U-120

    Abstract: 6mbi450u120 ED-4701 MT5F12959 6MBI450 IC450
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI450U-120 Spec. No. : MS5F 5359 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 12 '03 S.Yoshiwatari Feb. 12 '03 T.Miyasaka T.Fujihira K.Yamada MS5F 5359 1 14 H04-004-07 Revised Records Date Classification


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    PDF 6MBI450U-120 H04-004-07 H04-004-06 H04-004-03 6MBI450U-120 6mbi450u120 ED-4701 MT5F12959 6MBI450 IC450

    4MBI100T-060

    Abstract: ED-4701
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 4MBI100T-060 Spec. No. : MS5F 5431 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 23 ’03 S.Ogawa Apr. 23 ’03 T.Miyasaka Apr. - 23 - ’03 K.Yamada T.Fujihira MS5F 5431 1 14 H04-004-07 a b c Revised Records


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    PDF 4MBI100T-060 H04-004-07 P3/14, P4/14, H04-004-03 4MBI100T-060 ED-4701

    6MBI225U-170

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI225U-170 Spec. No. : MS5F 5391 Fuji Electric Co.,Ltd. Matsumoto Factory Mar. 3 ’03 S.Yoshiwatari Mar. 3 ’03 T.Miyasaka Mar.- 3 -’03 K.Yamada T.Fujihira MS5F 5391 1 14 H04-004-07 Revised Records


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    PDF 6MBI225U-170 H04-004-07 H04-004-06 H04-004-03 6MBI225U-170 ED-4701 MT5F12959

    6MBI75UA-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka Jan.- 31- ’03 K.Yamada T.Fujihira MS5F 5354 a 1 13 H04-004-07 Revised Records


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    PDF 6MBI75UA-120 H04-004-07 P4/13) P11/13) H04-004-06 6MBI75e H04-004-03 6MBI75UA-120 ED-4701 MT5F12959

    6MBI225U-120

    Abstract: ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI225U-120 Spec. No. : MS5F 5357 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 12 '03 S.Yoshiwatari Feb. 12 '03 T.Miyasaka K.Yamada T.Fujihira MS5F 5357 1 14 H04-004-07 Revised Records Date Classification


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    PDF 6MBI225U-120 H04-004-07 H04-004-06 H04-004-03 6MBI225U-120 ED-4701 MT5F12959

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Ind. Content R e c o r d s


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    PDF 2MBI150U2A-060 MS5F5615 H04-004-07b H04-004-06b H04-004-03a