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    HIGH VOLTAGE 8 AND 16 AMP Search Results

    HIGH VOLTAGE 8 AND 16 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE 8 AND 16 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Voltage 8 and 16 Amp

    Abstract: HVSSeries
    Text: Product Brief High Voltage 8 and 16 Amp Schottky Rectifier Series CSHD8 Series 8 Amp 60V, 100V and 200V in the DPAK package CSHDD16 Series (16 Amp) 40V thru 200V Dual Common Cathode in the D2PAK package Typical Electrical Characteristics Central Semiconductor’s CSHD8 series (8 Amp)


    Original     		PDF CSHDD16 High Voltage 8 and 16 Amp HVSSeries

    KVA-500

    Abstract: SB98107 4530 bussmann
    Text: Bussmann Buss High Voltage Fuses HV Series 1000 - 10,000 Volts HVA 1000 Volts Amps 1/16 1/8 1/4 1/10 2/10 3/10 3/8 1/2 CATALOG SYMBOL: HVA, HVB, HVJ, HVL, HVR, HVT, HVU, HVW, AND HVX NON-TIME DELAY 1000 TO 10,000 VOLTS • Non-Time Delay fuses for high voltage instruments and circuits.


    Original     		PDF SB98107 KVA-500 SB98107 4530 bussmann

    LQFP32

    Abstract: LQFP44 ST72324BL
    Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application


    Original     		PDF ST72324BLxx-Auto 10-bit LQFP32 LQFP44 16-bit ST72324BL

    sinus inverter 12V -230V

    Abstract: SCT 280 Digital TV transmitter receivers block diagram electromagnetic pulse generator kit icp multiplexer 24 pin MCC 4D mcc 95 08101b scr speed control dc motor TRANSISTOR BC 187 LQFP32
    Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application


    Original     		PDF ST72324BLxx-Auto 10-bit LQFP32 LQFP44 16-bit sinus inverter 12V -230V SCT 280 Digital TV transmitter receivers block diagram electromagnetic pulse generator kit icp multiplexer 24 pin MCC 4D mcc 95 08101b scr speed control dc motor TRANSISTOR BC 187

    HS-5 310

    Abstract: No abstract text available
    Text: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Preliminary Data Features ● ● ● ● ● Memories – 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with


    Original     		PDF ST72324BLxx-Auto 10-bit HS-5 310

    Untitled

    Abstract: No abstract text available
    Text: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A


    Original     		PDF CY62157ESL I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15)

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 I/O15) CY62157DV20

    Untitled

    Abstract: No abstract text available
    Text: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A


    Original     		PDF CY62157ESL 44-pin I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    Untitled

    Abstract: No abstract text available
    Text: Positronic Industries connectpositronic.com continued from previous page . . . 8-16 AWG [10.0-1.0mm2] removable solder and crimp power, 0.125 inch [3.18 mm] diameter straight and right angle 90° solder printed board mount, power, ­shielded, high voltage


    Original     		PDF

    ltadb

    Abstract: LTACY Marking LTC2602 BD01 LTC1661 LTC2612 LTC2622 A1 marking code amplifier
    Text: LTC2602/LTC2612/LTC2622 Dual 16-/14-/12-Bit Rail-to-Rail DACs in 8-Lead MSOP U FEATURES DESCRIPTIO • The LTC 2602/LTC2612/LTC2622 are dual 16-,14- and 12-bit, 2.5V-to-5.5V rail-to-rail voltage-output DACs, in a tiny 8-lead MSOP package. They have built-in high performance output buffers and are guaranteed monotonic.


    Original     		PDF LTC2602/LTC2612/LTC2622 16-/14-/12-Bit 2602/LTC2612/LTC2622 12-bit, LTC2602: 16-Bits LTC2612: 14-Bits LTC2622: 12-Bits ltadb LTACY Marking LTC2602 BD01 LTC1661 LTC2612 LTC2622 A1 marking code amplifier

    rcf art

    Abstract: CTS256 JEDEC to 243 ST LQFP32 LQFP44 LQFP64 ST72321 ST72324 jrc 2218 ST72P3
    Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ Memories – 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and


    Original     		PDF ST72325xxx-Auto rcf art CTS256 JEDEC to 243 ST LQFP32 LQFP44 LQFP64 ST72321 ST72324 jrc 2218 ST72P3

    block diagram for RF transmitter AND RECEIVER doc

    Abstract: No abstract text available
    Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ Memories – 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and


    Original     		PDF ST72325xxx-Auto block diagram for RF transmitter AND RECEIVER doc

    TRANSISTOR SMD MARKING CODE 2.T

    Abstract: ca6 smd code SMD diode Ca6 SMD JRC DIODE smd marking A4 Diodes smd marking f5 reverse voltage marking code E5 SMD ic SCR TRIGGER PULSE 3 phase sinus inverter 12V -230V ca2 smd code
    Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features Memories • 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and in-circuit


    Original     		PDF ST72325xxx-Auto 16-bit TRANSISTOR SMD MARKING CODE 2.T ca6 smd code SMD diode Ca6 SMD JRC DIODE smd marking A4 Diodes smd marking f5 reverse voltage marking code E5 SMD ic SCR TRIGGER PULSE 3 phase sinus inverter 12V -230V ca2 smd code

    MCU24-1

    Abstract: AN1709 LQFP32 LQFP44 LQFP48 LQFP64 SDIP42 ST72321 ST72324 ST72325
    Text: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features Memories • 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and in-circuit


    Original     		PDF ST72325xxx-Auto 16-bit MCU24-1 AN1709 LQFP32 LQFP44 LQFP48 LQFP64 SDIP42 ST72321 ST72324 ST72325

    synergy microwave vco

    Abstract: adf4150hv ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31
    Text: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: 6 V to 30 V RF bandwidth to 4.4 GHz Programmable divide-by-1/2/4/8 or 16 outputs


    Original     		PDF ADF4150HV ADF4150HV -220-WHHD. 32-Lead CP-32-11) ADF4150HVBCPZ ADF4150HVBCPZ-RL7 EVAL-ADF4150HV-EB1Z EVAL-ADF4150HV-EB1ZU1 synergy microwave vco ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31

    BGA-48-0608

    Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616UV2021 BS616UV2021 70/100ns -40oC R0201-BS616UV2021 BGA-48-0608 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 CY62157DV20