Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH VOLTAGE AMPLIFIER TRANSISTOR Search Results

    HIGH VOLTAGE AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3339 2SC4476 800V/10mA 2010C 2SC4476]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3338 2SC4475 800V/3mA 2010C 2SC4475]

    2SC4475

    Abstract: ITR07067 ITR07068 ITR07070 ITR07071 VITR07069
    Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3338 2SC4475 800V/3mA 2010C 2SC4475] O-220AB 2SC4475 ITR07067 ITR07068 ITR07070 ITR07071 VITR07069

    EN3338

    Abstract: 2SC4475
    Text: Ordering number:EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF EN3338 2SC4475 800V/3mA 2010C 2SC4475] O-220AB SC-46 EN3338 2SC4475

    2SC4476

    Abstract: ITR07077 ITR07078 ITR07080 ITR07081 VITR07079
    Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF ENN3339 2SC4476 800V/10mA 2010C 2SC4476] O-220AB 2SC4476 ITR07077 ITR07078 ITR07080 ITR07081 VITR07079

    2SC4476

    Abstract: No abstract text available
    Text: Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm


    Original     		PDF EN3339 2SC4476 800V/10mA 2010C 2SC4476] O-220AB SC-46 2SC4476

    2N6211

    Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
    Text: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig


    Original     		PDF 2N6211 2N6212 2N6213 25-350V 200mA 2N6211 mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385

    2SA1960

    Abstract: 2SC5225 Hitachi DSA0014
    Text: 2SC5225 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA1960. Features • High voltage large current operation.


    Original     		PDF 2SC5225 2SA1960. 2SA1960 2SC5225 Hitachi DSA0014

    2SA1960

    Abstract: 2SC5225 2SA19 Hitachi DSA00125
    Text: 2SA1960 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features • High voltage large current operation.


    Original     		PDF 2SA1960 2SC5225. 2SA1960 2SC5225 2SA19 Hitachi DSA00125

    2sd1071 equivalent

    Abstract: 2SD1071 IC/2sd1071 equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER  DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain


    Original     		PDF 2SD1071 2SD1071 2SD1071L-TA3-T 2SD1071G-TA3-T QW-R203-043 2sd1071 equivalent IC/2sd1071 equivalent

    2SC5225

    Abstract: DSA003642
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.


    Original     		PDF 2SC5225 ADE-208-393A 2SC5225 DSA003642

    2SA1201

    Abstract: 2SC2881
    Text: UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz typ. * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201


    Original     		PDF 2SC2881 120MHz 2SA1201 OT-89 250mm2 QW-R208-032 2SA1201

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 250mm2 QW-R208-024

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz typ. * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201


    Original     		PDF 2SC2881 120MHz 2SA1201 OT-89 250mm2Ã 250mm QW-R208-032

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201  SOT-89 ORDERING INFORMATION


    Original     		PDF 2SC2881 120MHz 2SA1201 OT-89 2SC2881G-x-AB3-R QW-R208-032

    2SA1201

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 QW-R208-024

    Untitled

    Abstract: No abstract text available
    Text: CLC520 CLC520 Amplifier with Voltage Controlled Gain, AGC +Amp Literature Number: SNOS861C CLC520 Amplifier with Voltage Controlled Gain, AGC +Amp General Description Features The CLC520 is a wideband DC-coupled amplifier with voltage controlled gain AGC . The amplifier has a high impedance, differential signal input; a high bandwidth, gain control


    Original     		PDF CLC520 CLC520 SNOS861C 160MHz 60MHz)

    NTE188

    Abstract: NTE189
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz, 100MHz NTE188 NTE189

    ic 10w power amplifier

    Abstract: npn general purpose high voltage amplifier NTE189 NTE188
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz, 100MHz ic 10w power amplifier npn general purpose high voltage amplifier NTE189 NTE188

    2N6211

    Abstract: 2N6212 2N6213 m6213 transistor SST 250
    Text: MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers.


    OCR Scan     		PDF 2N6211 2N6212 2N6213 2N6213 200oC Tj-150Â V-VCE-10V m6213 transistor SST 250

    2N6212

    Abstract: 2N6213 m6213 2N6211
    Text: Ü& MOS PEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig


    OCR Scan     		PDF 25-350V 200mA 2N6211 2N6212 2N6213 2N6213 200oC Tj-150Â m6213

    MPS-L51

    Abstract: transistor BF 2030
    Text: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage


    OCR Scan     		PDF MPS-L51 MPS-L51 transistor BF 2030

    Untitled

    Abstract: No abstract text available
    Text: KSC2258/2258A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE GENERAL AMPLIFIER TV VIDEO OUTPUT AMPLIFIER TO-126 • High B V ceo ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit : KSC2258 : KSC2258A VcBO 250 V V Collector Emitter Voltage: KSC2258


    OCR Scan     		PDF KSC2258/2258A O-126 KSC2258 KSC2258A

    vqe 14 display

    Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
    Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim


    OCR Scan     		PDF 2N5551 2N5401 MIL-STD-202, 100MHz 250nA, 300ps, DS11105 2N5551 vqe 14 display vqe 14 e led display vqb 200 d