CPC7557
Abstract: No abstract text available
Text: CPC7557 Diode Bridge INTEGRATED CIRCUITS DIVISION Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on IXYS Integrated Circuits Division’s High Voltage SOI
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CPC7557
CPC7557N
CPC7557N
100/Tube)
CPC7557NTR
2000/Reel)
DS-CPC7557-R04
CPC7557
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PDF
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Untitled
Abstract: No abstract text available
Text: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features Ordering Information • Monolithic Construction
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Original
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CPC7557
CPC7557N
CPC7557N
50/Tube)
CPC7557NTR
1000/Reel)
2002/95/EC
DS-CPC7557
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PDF
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Untitled
Abstract: No abstract text available
Text: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package
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Original
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CPC7557
CPC7557N
100/Tube)
CPC7557N
CPC7557NTR
2000/Reel)
2002/95/EC
DS-CPC7557
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PDF
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Untitled
Abstract: No abstract text available
Text: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package
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Original
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CPC7557
CPC7557N
50/Tube)
CPC7557N
CPC7557NTR
1000/Reel)
2002/95/EC
DS-CPC7557
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PDF
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JESD-625
Abstract: EIA-481-2 J-STD-033
Text: CPC7557 Diode Bridge Bridge Characteristics Parameter Description Rating Units Reverse Voltage 100 V Forward Current 240 mArms The CPC7557N is an integrated diode bridge built on Clare’s High Voltage SOI technology. Features • Monolithic Construction • Surface Mount Package
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Original
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CPC7557
CPC7557N
CPC7557N
50/Tube)
CPC7557NTR
1000/Reel)
2002/95/EC
DS-CPC7557
JESD-625
EIA-481-2
J-STD-033
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PDF
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BYV32E
Abstract: BYV32E-100 BYV32EB
Text: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits High reverse voltage surge capability
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BYV32E-100
O-220AB)
BYV32E-100
BYV32E
BYV32EB
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PDF
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LS4148W
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current
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LS4148W
067mg
LS4148W
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PDF
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LS4448W
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR LS4448W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current
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LS4448W
LS4448W
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 11DF1 11DF2 1.1A/100— 200V/trr : 30nsec FEATURES • Miniature Size t Z kV- p.7 .106 t-jt . i2.3(.091) • Ultra - Fast Recovery • Low Forward Voltage Drop 0.91035) nI a 0.7(.027) • Low Power Loss, High Efficiency 27(1.06) M IN ° High Surge Capability
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OCR Scan
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11DF1
11DF2
A/100â
00V/trr
30nsec
bbl51S3
000E147
bblS123
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PDF
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Untitled
Abstract: No abstract text available
Text: QR_3310001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Fast Recovery Diode Module 100 Amperes/3300 Volts A F D G H H G E B M THD (3 PLACES) Description: High voltage diodes feature highly insulating housings that offer
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Amperes/3300
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Edal Series BR1064-2 Silicon High Voltage Board Rectifier
Abstract: br1064 diode piv 10 rectifier diode piv Edal
Text: Edal SERIES BR1064-2 SILICON HIGH VOLTAGE BOARD RECTIFIER ELECTRICAL SPECIFICATIONS PIV VOLTS 10,000 V Io (IN 55o C OIL 200 mA Vf @ 100 Ma 15 V Max Ir @ PIV @ 25o C 5 uA Max Trr @ If = 50mA, Ir = 100 mA, Recovery to 25 mA 250 nSec Max Diode driven to 5 mA Peak, Reverse slope to be steep and stable
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BR1064-2
Edal Series BR1064-2 Silicon High Voltage Board Rectifier
br1064
diode piv 10
rectifier diode piv
Edal
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PDF
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Diode 31DQ06
Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Text: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »
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OCR Scan
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31DQ05
31DQ06
31DQ05
Ti-40
00017T4
Diode 31DQ06
Diode 31DQ05
31DQ06
BACR
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PDF
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high voltage rectifier diode
Abstract: No abstract text available
Text: 4-5 High Voltage Rectifier Diode Category V RM kV Part Nubmer IF(AV) (mA) IFSM (A) 50Hz Tc (°C) Tstg (°C) VF (V) max Single Half Sine Wave General-purpose For general FBT For high frequency multilayer FBT For ultra-high frequency multilayer FBT IR IF (µA)
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SHV-02
SHV-03S
SHV-03
SHV-10
SHV-12
SHV-14
SHV-16
SHV-20
SHV-24
SHV-06EN
high voltage rectifier diode
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PDF
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2E14
Abstract: 4h sic
Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield
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N00014-02-C-0302,
2E14
4h sic
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B550 transistor
Abstract: diode 606 transistor r 606 j optocouple VF125 Not3
Text: SIEMENS AKTIEN6ESELLSCHAF 47E J> • S IEM EN S fl23Sb05 00272<ÏD fl « S I E G SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR FEATURES DESCRIPTION * Isolation Test Voltage: 5300 V * High Current Transfer Ratios at 10 mA: 63-125% at 1 mA: >22%
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OCR Scan
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235b05
B550 transistor
diode 606
transistor r 606 j
optocouple
VF125
Not3
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PDF
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating
Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK
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smd Optocoupler 601
Abstract: B550 transistor transistor smd TU 3 smd diode bd SFH6016
Text: SIE MEN S A K T I E N G E S E L L S C H A F 47E D 6235b05 0027312 3 « S I E G SIEM ENS SFH 6016 5.3 kV TRIOS* OPTOCOUPLER HIGH RELIABILITY _ -7 ^ - 0 3 Package Dimensions mm 6.3 6 Anode - 1 I> 5 Cathode - 2 I> O J> _ r 4 not connected - 3
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OCR Scan
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6235b05
fl23Sb05
D02731b
T-41-83
smd Optocoupler 601
B550 transistor
transistor smd TU 3
smd diode bd
SFH6016
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PDF
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Untitled
Abstract: No abstract text available
Text: SHV-06JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 3.0 kV ▪ Low Forward Voltage, VF : 6.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA
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SHV-06JN
UL94V-0
SHV-06JN
SHV06JN-DS
2006ity
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PDF
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Untitled
Abstract: No abstract text available
Text: SHV-06JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 3.0 kV ▪ Low Forward Voltage, VF : 6.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA
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SHV-06JN
UL94V-0
SHV-06JN
SHV06JN-DS
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PDF
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12/a1273 y k transistor
Abstract: No abstract text available
Text: CNX21 y V HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo transistor. The base is not accessible. Features o f this product: • very high isolation voltage o f 10 kV d.c. . • working voltage o f 10 kV (d.c.).
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OCR Scan
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CNX21
bbS3T31
12/a1273 y k transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI530G
O-220
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PDF
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HCPL-2731
Abstract: FAIRCHILD 2731 OPTOCOUPLER+HP+2730 rs 2731 HCPL-2730 6N139 HCPL 2731 2730 74LSxx 6N138
Text: Single-Channel: 6N138, 6N139 Dual-Channel: HCPL-2730, HCPL-2731 Low Input Current High Gain Split Darlington Optocouplers tm Features Description • ■ ■ ■ ■ ■ Low current - 0.5 mA Superior CTR-2000% Superior CMR-10 kV/µs CTR guaranteed 0-70°C
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6N138,
6N139
HCPL-2730,
HCPL-2731
CTR-2000%
CMR-10
E90700)
6N138V
HCPL-2730
HCPL-2731
FAIRCHILD 2731
OPTOCOUPLER+HP+2730
rs 2731
HCPL-2730
6N139
HCPL 2731
2730
74LSxx
6N138
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PDF
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Untitled
Abstract: No abstract text available
Text: SHV-05J High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 2.5 kV ▪ Low Forward Voltage, VF : 5.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA
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SHV-05J
UL94V-0
SHV-05J
SHV05J-DS
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFI9Z24G Power MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance
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IRFI9Z24G
O-220
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