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    HIGH VOLTAGE DIODE T35 Search Results

    HIGH VOLTAGE DIODE T35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE DIODE T35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EUPEC Thyristor

    Abstract: T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106
    Text: BACK NEXT HIGH POWER THYRISTORS AND DIODES Diode Thyristor 2 Features: 2 5 Features: 4 • Reverse Voltage up to 2800 Volts • Metal Ceramic Package • Reverse Voltage up to 4900 Volts • Metal Ceramic Package 1 Applications: • DC Motor Control for machine tools


    Original     		PDF 641-T218N16TOF 641-T358N16TOF 641-T588N16TOF 641-T879N16TOF 641-T1189N18TOF 641-D428N18TOF 641-D798N16TOF 641-TT92N16KOF 641-TT106N16KOF 641-TT162N16KOF EUPEC Thyristor T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106

    IC951

    Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
    Text: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE


    Original     		PDF STM16 OM5801 AN96051 IC951 stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458

    T161-160

    Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.


    Original     		PDF ISO9001 to300 SF15CL 500Aelement T161-160 SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100

    ZENER 5V1

    Abstract: kaschke 78T capacitor 100nf 400v CAPACITOR 100nf scr 2N5064 equivalent Transformer kaschke 230vac to primary 12vac transformer TRANSISTOR BC 338 SMD 094094912000 SCHEMATIC WITH IR2161
    Text: Application Note AN-1069 Electronic Transformer Applications By Peter Green Table of Contents Page Protection Issues for IR2161 Halogen Circuits.1 Open Circuit


    Original     		PDF AN-1069 IR2161 ZENER 5V1 kaschke 78T capacitor 100nf 400v CAPACITOR 100nf scr 2N5064 equivalent Transformer kaschke 230vac to primary 12vac transformer TRANSISTOR BC 338 SMD 094094912000 SCHEMATIC WITH IR2161

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		PDF E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120

    82801IBM

    Abstract: diode AH44 82801ibm ich9m Socket 478 VID pinout intel mvp-6 T3500
    Text: Intel Celeron® Mobile Processor Dual-Core on 45-nm Process Datasheet For Platforms Based on Mobile Intel® 4 Series Express Chipset Family September 2009 Document Number: 321111-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


    Original     		PDF 45-nm 82801IBM diode AH44 82801ibm ich9m Socket 478 VID pinout intel mvp-6 T3500

    IRKH162-14D20

    Abstract: IRKH135-16D25
    Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage


    OCR Scan     		PDF 10ohri 36-Thermal IRKH162-14D20 IRKH135-16D25

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE L 4 .0 S S MrafoBSTL . FEATURES o |SQUARE-PAK1 TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T-QH oTabless TO-220 : C10T-QH-11A oDual Diodes—Cathode Common OLow Forward Voltage Drop o High Surge Capability OTj=150°C operation


    OCR Scan     		PDF O-263AB C10T-QH O-220 C10T-QH-11A C10T04QH C10T04QH-11A 0A/40 -0T04QH bbl5123

    Schaffner NSG 223

    Abstract: LDP24M Schaffner NSG schaffner IT 223 load dump test MARKING 506C
    Text: fZ7 SGS-THOMSON LDP24M ^ 7 # R{i]Dra®ilL[lCT[^ S [jaD i TRANSIL LOAD DUMP PROTECTION FEATURES . TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION • HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS


    OCR Scan     		PDF LDP24M -SAEJ1113A SO-10â Schaffner NSG 223 LDP24M Schaffner NSG schaffner IT 223 load dump test MARKING 506C

    74hct354

    Abstract: No abstract text available
    Text: T - b 1 - Z i - 5 \ Technical Data CD54/74HC354, CD54/74HCT354 CD54/74HC356, CD54/74HCT356 HARRIS SEMICOND SECTOR B7E D Fils Number 1690 M302271 0017777 T B H A S High-Speed CMOS Logic 8-Input Multiplexer/Register, 3-State C D 54/74H C /H C T354 — Transparent Data & Select Latches


    OCR Scan     		PDF CD54/74HC354, CD54/74HCT354 CD54/74HC356, CD54/74HCT356 M302271 54/74H 54/74HC S4/74HCT 74hct354

    Silicon Schottky Diode sod123

    Abstract: SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6
    Text: Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES BAT56 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT continuous reverse voltage 60 V If continuous forward current 30 mA vF forward voltage


    OCR Scan     		PDF BAT56 OD123 MBA038 OD123. 711Dfl2b Silicon Schottky Diode sod123 SCHOTTKY BARRIER DIODE BAT56 T35 diode diode T35 -4-D6

    Laser SDL 980

    Abstract: Laser SDL
    Text: M Ë ¡3 m S E R I E S t 03 980 nmr 150 mW CW InGaAs LASER DIODES 3 le y Features 980 nm Output Single Transverse Mode 150 mW cw Power Proven High Reliability Demonstrated High Coupling Effciency Erbium-Doped Fiber Amplifier Pumps Diffraction Limited Beam


    OCR Scan     		PDF SDL-6500 6A05A; Laser SDL 980 Laser SDL

    P0502BAH

    Abstract: SCR 50A SG DIODE SP0503BAH
    Text: Product Number Description Packaging Page TVS Protection with Filter and Termination E > S PU SB1AJT Upstream USB Port Terminator with ESD Suppression & EMI Filtering R1 = 1 5 ohm s Surface M ount S C 7 0 - 6 . 186-188


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors CNW84/CNW85 Heavy duty optocouplers FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body DIL encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm


    OCR Scan     		PDF CNW84/CNW85 E90700 UCB901 CNW85. 003535T CNW84.

    rectifier s4 79

    Abstract: Y145W IRFM064 IRFM064D i292 BBV 32 transistors
    Text: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFMQ64 Product Summary The HEXFET® technology is the key to International Part Number BVq s s Rectifier's advanced line of power M O SFET transistors.


    OCR Scan     		PDF IRFMQ64 IRFM064D IRFM064U O-254 MIL-S-19500 rectifier s4 79 Y145W IRFM064 i292 BBV 32 transistors

    IRFR012

    Abstract: 8SS4 irfr010 IRFU010 IRFU012 k 3525 MOSFET
    Text: 11E 0 INTERNATIONAL R E C T I F I E R K 4flS5HSa aQGÔEbQ 7 | ata Sheet No. PD-9.514A T-35-25 INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED IR FR O iO IRFRCH2 IR FU O IO IRFUQ12 HEXFET TRANSISTORS : \ N-CHANNEL 50 Volt, 0.20 Ohm HEXFET Product Summary


    OCR Scan     		PDF T-35-25 IRFR010 IRFR012 IRFU010 IRFR010, IRFR012, IRFU010, IRFU012 MflS54S2 8SS4 IRFU010 k 3525 MOSFET

    12s60

    Abstract: k 3525 MOSFET 9514A IRFR010 IRFR012 IRFU010 IRFU012 SS452 5jeu JRFU010
    Text: 11E 0 I N T E R N A T I ON A L R E C T I F I E R 4flS5HSa aQGÔEbQ 7 | h ata Sheet No. PD-9.514A T-35-25 INTERNATIONAL RECTIFIER IOR AVALANCHE AND dv/dt RATED IR FR O iO IR FR 0 1 S HEXFET TRANSISTORS IRFUQ 1 0 N-CHAIMNEL 50 Volt, 0.20 Ohm HEXFET IRFUQ 1 S


    OCR Scan     		PDF SS452 T-35-25 IRFU01Ã IRFU012 IRFR010TR 12-S83) 12s60 k 3525 MOSFET 9514A IRFR010 IRFR012 IRFU010 IRFU012 5jeu JRFU010

    k 3525 MOSFET

    Abstract: IRFD1ZO irfd1z3
    Text: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-35-25 C-133 S54S2 C-134. k 3525 MOSFET IRFD1ZO irfd1z3

    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF 00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •


    OCR Scan     		PDF OMD300N06HL OMD120L60HL OMD240N10HL b76TD73 534-5776F

    FD9515

    Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
    Text: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International


    OCR Scan     		PDF T-35-25 IRFR020, IRFR022, IRFU020, IRFU022 FD9515 k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a

    T35 diode

    Abstract: diode T35 high voltage diode T35 L501130 FDH3595 MMBD7000 MMBD1501-1505
    Text: S e m i c o n d u c t o r " FDH3595 & Discrete POW ER & Signal Technologies „ . . National FDH3595 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol TA = 25*C unless otherwise noted


    OCR Scan     		PDF FDH3595 MMBD1501-1505 L501130 0040Sb3 T35 diode diode T35 high voltage diode T35 FDH3595 MMBD7000

    Untitled

    Abstract: No abstract text available
    Text: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor


    OCR Scan     		PDF 43Q2571 92CS-42662 92CS-429S1