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    HIGH VOLTAGE GERMANIUM DIODE Search Results

    HIGH VOLTAGE GERMANIUM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH VOLTAGE GERMANIUM DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N60P

    Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
    Text: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.


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    1N60P DO-35 1N60P 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35 PDF

    cross reference zener diodes

    Abstract: SCHOTTKY DIODES CROSS REFERENCE rf transistors cross reference
    Text: MCC TABLE OF CONTENTS I PART INDEX DIODES TRANSISTORS VOLTAGE REGULATORS II) III) 3 3 11 12 CASE STYLE REFERENCE GUIDE ELECTRICAL SPECIFICATIONS 13 30 DIODES 30 GERMANIUM DIODES 30 SUPERFAST RECOVERY RECTIFIERS 31 35 ULTRAFAST RECOVERY RECTIFIERS HIGH EFFICIENT RECTIFIERS .37


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    Untitled

    Abstract: No abstract text available
    Text: SR201 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage10 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current20u @V(R) (V)(Test Condition)10


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    SR201 Current200m Voltage10 Current20u PDF

    Untitled

    Abstract: No abstract text available
    Text: SK3087 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50 V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)50 I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition)


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    SK3087 Current50 Voltage60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2AA116 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200m V(FM) Max.(V) Forward Voltage.25 @I(FM) (A) (Test Condition)10m I(RM) Max.(A) Reverse Current5.0u @V(R) (V)(Test Condition)1.5


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    2AA116 Current10m Voltage30 Current150u PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N3769 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current25m V(RRM)(V) Rep.Pk.Rev. Voltage90 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage.50 @I(FM) (A) (Test Condition)25m I(RM) Max.(A) Reverse Current5.0u @V(R) (V)(Test Condition)5.0


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    1N3769 Current25m Voltage90 Current20u PDF

    diode code m10

    Abstract: avalanche photodiodes 1650nm APD 10ghz
    Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area


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    PDINP075500A-0-0-01

    Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
    Text: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon


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    1100nm, 1650nm 2100nm. 100micron. PDINP075500A-0-0-01 PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0 PDF

    BGT24MTR12

    Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC PDF

    T0825

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    BGT24MR2 VQFN32-9 BGT24MR2 VQFN32-9-PO VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9-PO VQFN32-9 VQFN32-9 PDF

    T-75 A HIGH VOLTAGE DIODES

    Abstract: diodes 1N34A DIODE 1N34A Reverse resistance 1n34a germanium diode diode germanium 1N34A T-75 High voltage diode 1n34a diode diode 1n34a 1N34A T-75 HIGH VOLTAGE DIODES
    Text: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact Ge diodes are widely used for detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. FEATURE * High reliability for resistance to vibration and shock proof. * High withstand voltage.


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    1N34A 1N34A) T-75 A HIGH VOLTAGE DIODES diodes 1N34A DIODE 1N34A Reverse resistance 1n34a germanium diode diode germanium 1N34A T-75 High voltage diode 1n34a diode diode 1n34a 1N34A T-75 HIGH VOLTAGE DIODES PDF

    AAY27

    Abstract: AAY 45 germanium diode "Germanium Diode" germanium diode junction capacitance Q60101-Y
    Text: AAY27 Germanium RF point-contact diode In addition to a high forward transconductance, the germanium diode AAY 27 displays small switching times and a good detector voltage efficiency at high frequencies. Therefore it is qualified for general purposes in RF as well as switching applications.


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    AAY27 Q60101-Y 100pf 105kHz AAY27 AAY 45 germanium diode "Germanium Diode" germanium diode junction capacitance PDF

    AAY28

    Abstract: 60101-Y28 colour code diode
    Text: AAY28 High-voltage germanium point-contact diode The high-vo ltag e germ anium diode A A Y 28 in the glass case 51 A 2 DIN 41 880 D O -7 for universal application has no lacquer coat and is marked by co u lo r rings. Starting at the cathode end, the co lo u r code runs as fo llo w s: brow n/gray/red/gray.


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    AAY28 AAY28 20kf2, 60101-Y28 colour code diode PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


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    1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    Germanium Power Diodes

    Abstract: BD3 tunnel diode Germanium Power Devices
    Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage


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    350mv) Germanium Power Diodes BD3 tunnel diode Germanium Power Devices PDF

    10 GHz gunn diode

    Abstract: backward diode "backward diode" CXY19 impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA
    Text: Microwave solid state backward diodes book 1 part 8 a> c Type No. Description _« 1 £ 3 O o*1 s Frequency Range GHz Typical Tangential Sensitivity Idbm) Min. Figure of Merit Typical Video Impedance (O) A E Y 17 Germanium bonded backward diode for use at X band


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    AEY17 OD-42 AEY29 AEY29R" DO-37 AEY31 AEY31A AEY32 OD-50 CXY19 10 GHz gunn diode backward diode "backward diode" impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA PDF

    DIODE 1N34A Reverse resistance

    Abstract: diodes 1N34A DIODE 1N34A 1n34a germanium diode 1n34a diode 1N34A diode germanium 1N34A germanium point contact diode n34a Honey Technology
    Text: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact Ge diodes are widely used For detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. max. 03. 2 L Features • High reliability for resistance to vibration and shock proof.


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    1N34A 1N34A) 40MHz DIODE 1N34A Reverse resistance diodes 1N34A DIODE 1N34A 1n34a germanium diode 1n34a diode 1N34A diode germanium 1N34A germanium point contact diode n34a Honey Technology PDF

    diode germanium 1n270

    Abstract: 1N270 germanium diode "Germanium diode" 1N270 diode germanium Germanium diode IV germanium diode junction capacitance Detectors - Diode Germanium Diode 1n270 1N270 diode
    Text: E L E C T R O N I C S , INC. 44 FARRAND STREET BLOOMFIELD, NJ 07003 973 748-5089 http ://www. nteinc. com 1N270 Germanium Diode Optimized for Radio Frequency Response Description: The 1N270 is a Germanium Diode in a DO-7 type glass package that can be used in many AM, FM


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    1N270 325mA 200mA diode germanium 1n270 germanium diode "Germanium diode" 1N270 diode germanium Germanium diode IV germanium diode junction capacitance Detectors - Diode Germanium Diode 1n270 1N270 diode PDF

    Photodiodes Germanium

    Abstract: T05 Package T018
    Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger­ manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared


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    70x80 100x130 250x250 500x500 GD2000 GD1000 Photodiodes Germanium T05 Package T018 PDF

    T018

    Abstract: No abstract text available
    Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger­ manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared


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    70x80 100x130 250x250 500x500 GD2000 GD1000 T018 PDF