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    HIGH VOLTAGE PULSE WITH IRF840 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF840LC

    Abstract: SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 11-Mar-11 IRF840LC SiHF840LC-E3 PDF

    transistor tip 1050

    Abstract: No abstract text available
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss


    Original     		IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 2002/95/EC O-262) O-263) 2011/65/EU 2002/95/EC. 2002/95/EC transistor tip 1050 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF840B/IRFS840B IRFS840 IRFS840A IRFS840BT IRFS840B O-220F O-220F O-220F-3 AN-4121: PDF

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF840LCPBF

    Abstract: IRF840LC SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3 PDF

    IRF840B

    Abstract: No abstract text available
    Text: IRF840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF840B IRF840B PDF

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


    OCR Scan     		840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv PDF

    IRF840LC

    Abstract: IRF840LCL IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3 IRF840LCSTRR
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single G G S RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 18-Jul-08 IRF840LC IRF840LCL IRF840LCS SiHF840LC SiHF840LCL-E3 SiHF840LCS-E3 IRF840LCSTRR PDF

    irf84

    Abstract: No abstract text available
    Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRF840L, SiHF840L 2002/95/EC O-262) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf84 PDF

    2005Z

    Abstract: IRF840B IRF series 2005 Z IRFS840B
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF840B/IRFS840B 2005Z IRF840B IRF series 2005 Z IRFS840B PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF840B/IRFS840B PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 8.0A, 500V, RDS on = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		IRF840B/IRFS840B O-220 O-220F 54TYP 00x45Â PDF

    IRF840LCL

    Abstract: IRF840 IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3
    Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LCS, IRF840LCL, SiHF840LCS SiHF840LCL 18-Jul-08 IRF840LCL IRF840 IRF840LCS SiHF840LC SiHF840LCL-E3 SiHF840LCS-E3 PDF

    IRF840LC

    Abstract: SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original     		IRF840LC, SiHF840LC 18-Jul-08 IRF840LC SiHF840LC-E3 PDF

    Application of irf840

    Abstract: transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840
    Text: DC COMPONENTS CO., LTD. IRF840 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 0.8 Ohm ID = 8.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		IRF840 O-220AB Application of irf840 transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840 PDF

    ir 441 c

    Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
    Text: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e


    OCR Scan     		IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 O-220 IRF840/IRFP440/IRF440 IRF841 /IRFP441 /IRF441 IRF842/IRFP442/IRF442 IRF843/IRFP443/IRF443 ir 441 c 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442 PDF

    SiHF840ASTRL-GE3a

    Abstract: transistor tip 1050
    Text: IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF840AS, SiHF840AS IRF840AL, SiHF840AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC SiHF840ASTRL-GE3a transistor tip 1050 PDF

    irf8408

    Abstract: transistor irf840 fet irf840 inverter irf840 VNE40 IRFB40 D84ER2 high voltage pulse with irf840 3232a Application of irf840
    Text: IRF840.841 D84ER2.R1 [MIT 8 AMPERES 500, 450 VOLTS r DS ON = °-85 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRF840 D84ER2 00A/jusec, 250uA. irf8408 transistor irf840 fet irf840 inverter irf840 VNE40 IRFB40 high voltage pulse with irf840 3232a Application of irf840 PDF

    MOSFET IRF 1018 Datasheet

    Abstract: AN1001 IRF1010 IRF840A ST IRF840A International Rectifier IRF840A
    Text: PD- 91900B IRF840A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		91900B IRF840A AN1001) O-220AB IRF1010 MOSFET IRF 1018 Datasheet AN1001 IRF1010 IRF840A ST IRF840A International Rectifier IRF840A PDF

    IRF840A

    Abstract: SiHF840A SiHF840A-E3
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF840A, SiHF840A 2002/95/EC O-220AB 11-Mar-11 IRF840A SiHF840A-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840S FEATURES • • • • • • • • D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirement Lead Pb -free Available D2PAK (TO-263) G G D S S N-Channel MOSFET


    Original     		IRF840S O-263) SMD-220 PDF