Untitled
Abstract: No abstract text available
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features General Description ►► High voltage Vertical DMOS technology ►► Integrated drain output high voltage diodes ►► Integrated gate-to-source resistor
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Original
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TC7920
TC7920
12-Lead
DSFP-TC7920
B080613
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PDF
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A121010
Abstract: N mosfet 100v 500A
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor
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Original
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TC7920
TC7920
12-Lead
DSFP-TC7920
A121010
A121010
N mosfet 100v 500A
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PDF
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P-MOSFET
Abstract: TC7920 ir 222 125OC MD1822 C7920
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor
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Original
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TC7920
TC7920
12-Lead
DSFP-TC7920
A121010
P-MOSFET
ir 222
125OC
MD1822
C7920
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TC7920 Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes Features ► ► ► ► ► ► ► ► General Description High voltage Vertical DMOS technology Integrated drain output high voltage diodes Integrated gate-to-source resistor
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Original
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TC7920
TC7920
12-Lead
DSFP-TC7920
A012411
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PDF
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ITO-220AC
Abstract: RGSP12W
Text: RGSP12W Fast Plastic Power Rectifiers VOLTAGE: 1500V CURRENT:12.0A FEATURE ITO-220AC • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes
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Original
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RGSP12W
ITO-220AC
O-220AB
MIL-STD-750,
RGSP12W
ITO-220AC
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PDF
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OM100F60SB
Abstract: OM120L60SB OM70F120SB OM90L120SB K375
Text: OM120L60SB Preliminary Data Sheet OM100F60SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB OM7QF120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals
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OCR Scan
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OM120L60SB
OM90L120SB
OM100F60SB
OM7QF120SB
MIL-S-19500,
00010S7
OM70F120SB
K375
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PDF
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10 AMP 1200V RECTIFIER DIODE
Abstract: OM35F120HB OM45L120HB OM50F60HB OM60L60HB
Text: OM60L60HB OM45L120HB Preliminary Data Sheet OM50F60HB OM35F120HB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes, Half-Bridge Configuration FEATURES • • • •
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Original
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OM60L60HB
OM45L120HB
OM50F60HB
OM35F120HB
MIL-S-19500,
10 AMP 1200V RECTIFIER DIODE
OM35F120HB
OM45L120HB
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PDF
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70l12
Abstract: No abstract text available
Text: 0M120L60SB Preliminary Data Sheet OMIOOF6OSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB QM70F120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals
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OCR Scan
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0M120L60SB
OM90L120SB
QM70F120SB
MIL-S-19500,
h-275
00010S7
014S3
70l12
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PDF
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OM35F120SB
Abstract: OM45L120SB OM50F60SB OM60L60SB
Text: OM60L60SB Preliminary Data Sheet OM50F60SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM45L120SB OM35F120SB High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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Original
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OM60L60SB
OM50F60SB
OM45L120SB
OM35F120SB
MIL-S-19500,
60L60SB
45L120SB
35F120SB
50F60SB
OM35F120SB
OM45L120SB
OM50F60SB
OM60L60SB
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PDF
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OM35F120SB
Abstract: OM45L120SB OM50F60SB OM60L60SB
Text: OM60L60SB Preliminary Data Sheet OM50F60SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM45L120SB OM35F120SB High Current, High Voltage 600V And 1200V, Up To 75 Amp IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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Original
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OM60L60SB
OM50F60SB
OM45L120SB
OM35F120SB
MIL-S-19500,
60L60SB
45L120SB
35F120SB
50F60SB
OM35F120SB
OM45L120SB
OM50F60SB
OM60L60SB
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PDF
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100F60
Abstract: OM100F60SB OM120L60SB OM70F120SB OM90L120SB
Text: OM120L60SB Preliminary Data Sheet OM100F60SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB OM70F120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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Original
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OM120L60SB
OM100F60SB
OM90L120SB
OM70F120SB
MIL-S-19500,
100F60
OM100F60SB
OM120L60SB
OM70F120SB
OM90L120SB
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PDF
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10 AMP 1200V RECTIFIER DIODE
Abstract: OM35F120PB OM45L120PB OM50F60PB OM60L60PB
Text: OM60L60PB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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Original
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OM60L60PB
OM45L120PB
OM50F60PB
OM35F120PB
MIL-S-19500,
10 AMP 1200V RECTIFIER DIODE
OM35F120PB
OM45L120PB
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PDF
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10 AMP 1200V RECTIFIER DIODE
Abstract: OM35F120PB OM45L120PB OM50F60PB OM60L60PB
Text: OM60L60PB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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Original
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OM60L60PB
OM45L120PB
OM50F60PB
OM35F120PB
MIL-S-19500,
10 AMP 1200V RECTIFIER DIODE
OM35F120PB
OM45L120PB
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PDF
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Untitled
Abstract: No abstract text available
Text: OM6OL6OHB QM50F60HB Prelim inary Data Sheet OM45LI20HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 A m p IG BT s With F R E D Diodes. Half -Br id ge Con fig ura tio n FEATURES •
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OCR Scan
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QM50F60HB
OM45LI20HB
OM35F12QHB
MIL-S-19500,
L120HB
50F60HB
35F120HB
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PDF
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N-Channel jfet 100V depletion
Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature
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Original
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LS320
200mW
N-Channel jfet 100V depletion
transistor j113
15 A PNP POWER TRANSISTOR
P-Channel FET 100v to92
Ultra High Input Impedance N-Channel JFET Amplifier
Dual N P-Channel 100V
P-Channel JFET Switch
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PDF
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date code IEC 62
Abstract: bc107a pin out BC237 bf256c
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage
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Original
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VN0610LL
226AA)
secon218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
date code IEC 62
bc107a pin out
BC237
bf256c
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PDF
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BC237
Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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Original
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VN2222LL
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
transistor 2n2222a to-92
OF transistor 2N2222 to-92
transistor 2N3819
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PDF
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2N3819 fet
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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Original
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2N7002LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N3819 fet
BC237
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PDF
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mosfet J 3305
Abstract: VUM 33-05 J 3305 VUM+33-05
Text: Power MOSFET Stage for Boost Converters VUM 33-05 VDSS ID25 RDS on Module for Power Factor Correction 5 1 3 2 7 8 4 6 Test Conditions VDSS VDGR VGS T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 10 kΩ Continuous 500 500 ±20 V V V T S = 85°C T S = 25°C, tp = ①
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PDF
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BC237
Abstract: 2N7000 Fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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Original
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2N7000
226AA)
f218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N7000 Fet
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PDF
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Untitled
Abstract: No abstract text available
Text: VUM 33-05 Power MOSFET Stage for Boost Converters ID25 = 47 A VDSS = 500 V RDS on = 0.12 W Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 4 6 1 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ Continuous
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Original
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33-05N
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PDF
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mosfet base inverter with chargers circuit
Abstract: power factor correction boost topology
Text: VUM 24-05 ID25 = 35 A VDSS = 500 V RDS on = 0.12 W Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 4 6 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous Maximum Ratings
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Original
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24-05N
mosfet base inverter with chargers circuit
power factor correction boost topology
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PDF
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MOSFET 1 KW
Abstract: mosfet base inverter with chargers circuit 350 v 30 a diode rectifier
Text: VUM 33-05 ID25 = 47 A VDSS = 500 V RDS on = 0.12 W Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 4 6 1 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous
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Original
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33-05N
26diF/dt
MOSFET 1 KW
mosfet base inverter with chargers circuit
350 v 30 a diode rectifier
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PDF
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Untitled
Abstract: No abstract text available
Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ
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Original
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33-05N
33-05N
150fc
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PDF
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