semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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SHXXC760
Abstract: Hirect diode 2596 1040c diode
Text: Capsule Type Rectifier Diode SHXXC760 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-600 25 V mA 760 A 1200 A 8500 A 361 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SHXXC760
1040C
June-2008
SHXXC760
Hirect diode
2596
1040c diode
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Hirect
Abstract: 2596 HIND RECTIFIER
Text: Rectifier Diode SXXHNS/HRS201 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 30 V mA 200 A 300 A 3600 A 64.8 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHNS/HRS201
1300C
June-2008
Hirect
2596
HIND RECTIFIER
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Hirect
Abstract: HIND RECTIFIER HR-16 RECTIFIER DIODE "RECTIFIER DIODE" 2596 HIND RECTIFIER DIODE DATA SHEET
Text: Rectifier Diode SXXHN/HR16 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 4 V mA 16 A 25 A 300 A 450 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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SXXHN/HR16
1300C
June-2008
Hirect
HIND RECTIFIER
HR-16
RECTIFIER DIODE
"RECTIFIER DIODE"
2596
HIND RECTIFIER DIODE DATA SHEET
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HDD25N
Abstract: thyristor 80A, 1200V Hirect 1000C HDD25NXX
Text: Diode-Diode MODULE HDD25NXX Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 150 150 150 200-1800 200-1800 3 V V mA 25 A 40 A 500 A 1250 A2S BLOCKING PARAMETERS VRRM VDRM IRRM Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current
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HDD25NXX
1000C
June-2008
HDD25N
thyristor 80A, 1200V
Hirect
1000C
HDD25NXX
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2596
Abstract: No abstract text available
Text: Rectifier Diode SXXHN/HR860 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-2000 50 V mA 860 A 1350 A 16000 A 1280 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR860
10000C
June-2008
2596
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2596
Abstract: Hirect rectifier diode "RECTIFIER DIODE"
Text: Rectifier Diode SXXHN/HR20 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 4 V mA 20 A 32 A 350 A 610 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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SXXHN/HR20
1300C
June-2008
2596
Hirect
rectifier diode
"RECTIFIER DIODE"
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RECTIFIER DIODE 1000A
Abstract: 2596
Text: Rectifier Diode SXXHN/HR300 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 300 A 471 A 5200 A 130.20 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR300
1300C
June-2008
RECTIFIER DIODE 1000A
2596
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HR-6
Abstract: rectifier diode 2596 Hirect Hirect diode "RECTIFIER DIODE"
Text: Rectifier Diode SXXHN/HR6 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 6 A 9.5 A 200 A 200 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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1300C
HR-6
rectifier diode
2596
Hirect
Hirect diode
"RECTIFIER DIODE"
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HIND RECTIFIER
Abstract: Hirect "RECTIFIER DIODE" RECTIFIER DIODE 2596 1000C Hirect diode HR550 MA550A
Text: Rectifier Diode SXXHN/HR550 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 160 160 200-1800 40 V mA 550 A 865 A 12500 A 781 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR550
1000C
June-2008
HIND RECTIFIER
Hirect
"RECTIFIER DIODE"
RECTIFIER DIODE
2596
1000C
Hirect diode
HR550
MA550A
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Hirect
Abstract: Hirect diode hirect DIODE hr41 HIND RECTIFIER RECTIFIER DIODE HR41 2596 Hind Rectifiers HR41 63A-500 HIND RECTIFIER DIODE
Text: Rectifier Diode SXXHN/HR41 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 4 V mA 40 A 63 A 500 A 1250 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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SXXHN/HR41
1300C
June-2008
Hirect
Hirect diode
hirect DIODE hr41
HIND RECTIFIER
RECTIFIER DIODE HR41
2596
Hind Rectifiers
HR41
63A-500
HIND RECTIFIER DIODE
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SHXXC450
Abstract: 2596 Hirect diode
Text: Capsule Type Rectifier Diode SHXXC450 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 170 170 200-1800 20 V mA 450 A 700 A 4900 A 120 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SHXXC450
June-2008
SHXXC450
2596
Hirect diode
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HR14
Abstract: 2596 Hirect diode Hirect HIND RECTIFIER rectifier diode
Text: Rectifier Diode SXXHN/HR14 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 12 A 19 A 250 A 310 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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SXXHN/HR14
1300C
N/HR14
June-2008
HR14
2596
Hirect diode
Hirect
HIND RECTIFIER
rectifier diode
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RECTIFIER DIODE 1000A
Abstract: HRS320 HIND RECTIFIER 2596
Text: Rectifier Diode SXXHNS/HRS320 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 30 V mA 320 A 500 A 6550 A 214.50 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHNS/HRS320
1250C
June-2008
RECTIFIER DIODE 1000A
HRS320
HIND RECTIFIER
2596
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Hirect
Abstract: HIND RECTIFIER HR55 Hirect diode
Text: Rectifier Diode SXXHN/HR55 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 8 V mA 55 A 86 A 800 A 3200 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)
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SXXHN/HR55
1250C
June-2008
Hirect
HIND RECTIFIER
HR55
Hirect diode
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SHXXC1130
Abstract: A1775a 2596 650C Hirect diode
Text: Capsule Type Rectifier Diode SHXXC1130 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 160 160 200-1800 30 V mA 1130 A 1775 A 11000 A 605 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SHXXC1130
June-2008
SHXXC1130
A1775a
2596
650C
Hirect diode
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rectifier diode
Abstract: HIND RECTIFIER "RECTIFIER DIODE" 2596 Hirect Hirect diode
Text: Rectifier Diode SXXHNS/HRS250 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 250 A 392 A 5000 A 125.00 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHNS/HRS250
1300C
June-2008
rectifier diode
HIND RECTIFIER
"RECTIFIER DIODE"
2596
Hirect
Hirect diode
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2596
Abstract: Hirect Hirect diode hbr20
Text: Rectifier Diode SXXHBN/HBR200 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 30 V mA 200 A 300 A 4000 A 80.00 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHBN/HBR200
1300C
June-2008
2596
Hirect
Hirect diode
hbr20
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SHXXC2230
Abstract: Hirect Hirect diode 2596 mumbai s 2230
Text: Capsule Type Rectifier Diode SHXXC2230 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1800 50 V mA 2230 A 3500 A 25000 A 3125 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SHXXC2230
1090C
June-2008
SHXXC2230
Hirect
Hirect diode
2596
mumbai
s 2230
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hr250
Abstract: "RECTIFIER DIODE" HN Electronic Components 2596 HIND RECTIFIER rectifier diode Hirect diode
Text: Rectifier Diode SXXHN/HR250 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 250 A 392 A 5000 A 125.00 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR250
1300C
June-2008
hr250
"RECTIFIER DIODE"
HN Electronic Components
2596
HIND RECTIFIER
rectifier diode
Hirect diode
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SHXXC1850
Abstract: Hirect diode diode 1600 rectifier 2596 Hind Rectifiers Hirect 630C eg12
Text: Capsule Type Rectifier Diode SHXXC1850 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1800 40 V mA 1850 A 2900 A 20500 A 2100 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SHXXC1850
June-2008
SHXXC1850
Hirect diode
diode 1600 rectifier
2596
Hind Rectifiers
Hirect
630C
eg12
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HIND RECTIFIER
Abstract: rectifier diode Hirect diode Hirect HRS100
Text: Rectifier Diode SXXHNS/HRS100 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 20 V mA 100 A 160 A 2400 A 28.8 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHNS/HRS100
1300C
June-2008
HIND RECTIFIER
rectifier diode
Hirect diode
Hirect
HRS100
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SHXXC800
Abstract: sxhns100 HBN150 SXHNS150 Hirect SQ-870 hirect DIODE SA SXBN71 diode 0302C Hirect Diodes
Text: Engg. Publication 2 8/91 HIND RECTIFIERS LTD/ MKTG SbE D • 44^ I T ô M 0000020 b24 M H I N I Ordering Code : S A 34 B AR C 550 D SELECT A) Type of Diode R e ctifier Fast Recovery B) Voltage Class Code S SF V RRM required divided by 100 e.g. 15 will indicate 1500 volts VRRM
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l22433,
OM-15)
SHXXC800
sxhns100
HBN150
SXHNS150
Hirect
SQ-870
hirect DIODE SA
SXBN71
diode 0302C
Hirect Diodes
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Diode LT 410
Abstract: Hirect thyristor TT 45 N 1200 HTD95N HTT95N thyristor tt 162 n 12 HTT60N Hirect diode HDT60N HTT75N
Text: Engg. Publication 1 - 4/91 HIND R E C T I F I E R S LTD/ MKTÛ SbE D • 4 4 tm f l 4 0 0 0 0 0 B E 10b « H I N I T -2 .S'- ¿23 Hirect Pressure Contact Power Blocks are designed for use in various types of motor control and other high power applications. It combines multiple semi conductor devices in a single,
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00000BE
B-50V/
C-400V//iS
F-1000V///S
18//S
100yt
Q000G25
Diode LT 410
Hirect
thyristor TT 45 N 1200
HTD95N
HTT95N
thyristor tt 162 n 12
HTT60N
Hirect diode
HDT60N
HTT75N
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