HSL2-1808
Abstract: BAY6642
Text: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified
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BAY6642
1N6639
1N6643
HSL2-1808
HSL2-1808
BAY6642
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1N6510
Abstract: MX1N6510
Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
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1N6510
16-PIN
1N6510
MX1N6510
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TCA350
Abstract: TCA315 tcc110 m5623 TCA305 tcc11 M5516 M5622 MF Electronics t5623 T5622
Text: SURFACE MOUNT T5622, T5623 FIXED/ TRISTATE OSCILLATORS HiRel Military Oscillators Surface Mount, 5V 1 KHz to 125 MHz The T5622 and T5623 are rugged surface mount oscillators with ceramic hermetic glass seals. All units are intended for the most stringent application requiring the utmost in reliability.
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T5622,
T5623
T5622
T5623
MIL-STD-883
NY10801
TCA350
TCA315
tcc110
m5623
TCA305
tcc11
M5516
M5622
MF Electronics t5623
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Micro-X Marking 865
Abstract: No abstract text available
Text: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package
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OCR Scan
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CFY67
CFY67-06
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
QS9000
Micro-X Marking 865
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1N6508
Abstract: No abstract text available
Text: 1N6508 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
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1N6508
14-PIN
1N6508
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1N6509
Abstract: No abstract text available
Text: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
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1N6509
14-PIN
1N6509
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Q62702-A118
Abstract: No abstract text available
Text: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
Q62702-A118
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Micro-X marking "K"
Abstract: micro-X Package MARKING CODE C
Text: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power
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CFY27
CFY27-38
CFY27-P
CFY27-nnl:
QS9000
Micro-X marking "K"
micro-X Package MARKING CODE C
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Untitled
Abstract: No abstract text available
Text: Com m ercial/Industrial D ev ice s PLCC 44 68 84 PQFP 100 144 160 208 240 RQFP 208 240 VQFP 80 TQFP 100 144 BGA 225 176 272 313 CPGA 329 84 100 132/133 175/176 207 257 CQFP 84 132 172 196 208 256 HiRel/Space D evice RadTolerant < o o 12 x CM CO X 5 A </
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1200XL
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6101A DATA SHEET
Abstract: No abstract text available
Text: 6101A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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16-PIN
6101A DATA SHEET
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6100A
Abstract: No abstract text available
Text: 6100A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 14-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering
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14-PIN
6100A
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MX6510A
Abstract: No abstract text available
Text: 6510A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
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16-PIN
MX6510A
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5774A
Abstract: No abstract text available
Text: 5774A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 14-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes
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14-PIN
5774A
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T0-257AA
Abstract: 16JYQ100C
Text: PD-96974 16JYQ100C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 100V Major Ratings and Characteristics Description/Features Characteristics The 16JYQ100C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of HiRel environments. It is packaged in the hermetic isolated
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PD-96974
16JYQ100C
16JYQ100C
O-257AA
MIL-PRF-19500
T0-257AA
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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CLX27
Abstract: CLX27-00 CLX27-05 CLX27-10
Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application
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CLX27
CLX27-00
MWP-25
CLX27-05
CLX27-10
CLX27-nn:
QS9000
CLX27
CLX27-00
CLX27-05
CLX27-10
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CLX30
Abstract: CLX30-00 CLX30-05 CLX30-10 d 882 p 063DB
Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application
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CLX30
CLX30-00
MWP-25
CLX30-05
CLX30-10
CLX30-nn:
QS9000
CLX30
CLX30-00
CLX30-05
CLX30-10
d 882 p
063DB
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54SX32
Abstract: A54SX32 A54SX32A A54SX72A PAR64 REQ64 54SX32A il 074
Text: Preliminary v1.0 HiRel SX-A Family FPGAs Le a di n g E d ge P er f o r m a n ce • QML Certified Devices • 215 MHz System Performance Military Temperature • 100% Military Temperature Tested (–55°C and +125°C) • 5.3ns Clock-to-Out (Pin-to-Pin) (Military Temperature)
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A03 transistor
Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
Q62702F-1610
a03 dbm
microwave transistor bfy193
24 marking code transistor
K 193 transistor
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XY 805 ic
Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
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Q97301013
Q97111419
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
XY 805 ic
microwave transducer
marking A04
on semiconductor marking code A04
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BFQ71
Abstract: Q62702-F775 bfq 96
Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.
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Q62702-F775
BFQ71
Q62702-F775
bfq 96
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10-PIN
Abstract: 1N5768
Text: 5770A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as
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10-PIN
1N5768
1N5768
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micro-x mhz ghz microwave
Abstract: Micro-X Marking 865
Text: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package
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CFY67
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
CFY67-nnl:
micro-x mhz ghz microwave
Micro-X Marking 865
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SPRUF98
Abstract: SPRU889 OMAP3503-HIREL
Text: OMAP3503-HiRel www.ti.com SPRS663 – FEBRUARY 2010 OMAP3503-HiRel Applications Processor Check for Samples: OMAP3503-HiRel 1 OMAP3503-HiRel Applications Processor 1.1 Features 123 • OMAP3503 Applications Processor: – OMAP 3 Architecture – MPU Subsystem
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OMAP3503-HiRel
SPRS663
OMAP3503-HiRel
32-bit
16-bit
128M-Byte
SPRUF98
SPRU889
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