cel 9200
Abstract: hitachi mold cel CY7C199-VC cda 199 Hitachi CEL 9200 9200 hitachi 8361H JESD22
Text: Cypress Semiconductor Package Qualification Report QTP# 000405 VERSION 1.1 July, 2000 SOJ 28 Leads Hitachi Cel 9200 Molding Compound Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069
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85C/85
CY7C199-VC
cel 9200
hitachi mold cel
CY7C199-VC
cda 199
Hitachi CEL
9200
9200 hitachi
8361H
JESD22
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WCR3
Abstract: SH4 7750 hitachi SH4 hitachi define Hitachi DSAUTAZ006 SH7750F
Text: Hitachi Europe Ltd. Version: Apps/ 092/1.0 APPLICATION NOTE SH4 Interface to SDRAM By Ed Clarke, Field Application Engineer Introduction: This application note has been written to aid designers who will be connecting Synchronous Dynamic Random Access Memory SDRAM to the SH4 Bus State Controller (BSC). Please note it is strongly recommended that
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HM514410
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit D ynam ic R A M The Hitachi H M ? 14 4 1O B/BL is a C M O S dynamic Ordering Information R A M organi/.ed I .04K .576-w ord x 4-hit. H M 5 14 4 1O B / B L has realized h ig h er density, higher perform ance and various functions by
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HM51441OB/BL
576-word
576-w
HM514410BS/BLS-7
HM514410BS/BLS-8
300-mil
20-pin
CP-20D)
400-mil
HM514410
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC458 K SILIC O N NPN EPITA XIA L M ED IUM S P E E D SW IT C H IN G 1. I:iniuce 2. Cottaci»? 3 Bunc L i¡íK.?5>í;>r»s í'i u m ii (JE D E C TO-92) M AXIM UM C O L L E C T O R D IS SIP A T IO N CURVE I A B S O L U T E M AXIM UM R A T IN G S (Ta=25°Ci
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2SC458
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TI624
Abstract: TI6244
Text: HB56A264EJ Series Preliminary 2 ,0 9 7 ,1 5 2 -W o rd x 64-B it H igh D ensity D ynam ic RAM M odule HITACHI . ne H B 5 6 A 2 6 4 E I b e lo n g s to 8 B y te D IM M D u a l In -lin e M e m o ry M o d u le fa m ily , a n d h a s b e en d e v elo p ed a s a n o p tim iz e d m a in m e m o ry s o lu tio n
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HB56A264EJ
TI624
TI6244
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Untitled
Abstract: No abstract text available
Text: HM101524 Series Preliminary 1048576-word x 4-bit Random Access Memory Description Pin Arrangement The Hitachi HM101524 is ECL 101k compati ble, 1048576 word by 4 bit read/write random access memory developed for high speed systems. Features • • • •
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HM101524
1048576-word
15/18ns
9/12ns
700mW
165mV/-1475mV
-1165mV/-1475mV
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Untitled
Abstract: No abstract text available
Text: HITACHI/ riCU/MPU SOE D 4MRb204 DDESÔS4 EST • HIT3 H D66107T-(LCD Driver for High Voltage) 7 3 - o J D escription • • The HD66107T is a m ulti-output, high d u ty ratio LCD driver u sed for large capacity dot m atrix LCD panels. It consists of 160 LCD
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4MRb204
D66107T---------------
HD66107T
HD66107Ts
44Tb2D4
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Untitled
Abstract: No abstract text available
Text: HM51W4160A/AL Series Preliminary 262,144-Word x 16-Bit Dynamic Random Access Memory • DESCRIPTION HM51W4160ATT/ALTT/ARR/ALRR Series The Hitachi HM51W4160A/AL are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W4160A/AL have realized higher density, higher performance and various
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HM51W4160A/AL
144-Word
16-Bit
16-bit.
40-pin
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/M b?E D • 44^503 002447S HM514190A/AL, HM51S4190A/AL Series 5flb ■ HITS Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or ganized a s 262,144-word x 18-bit. HM514190A/AL have re
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002447S
HM514190A/AL,
HM51S4190A/AL
144-Word
18-Bit
HM514190A/AL
18-bit.
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Untitled
Abstract: No abstract text available
Text: HM514190A/AL, HM51S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or ganized as 262,144-word x 18-bit. HM514190A/AL have re alized higher density, higher performance and various func
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HM514190A/AL,
HM51S4190A/AL
144-Word
18-Bit
HM514190A/AL
18-bit.
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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HM514190AJ7
Abstract: No abstract text available
Text: HM514190A/AL, HM51S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or ganized as 262,144-word x 18-bit. HM514190A/AL have re alized higher density, higher performance and various func
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HM514190A/AL,
HM51S4190A/AL
144-Word
18-Bit
HM514190A/AL
18-bit.
HM514190AJ7
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Untitled
Abstract: No abstract text available
Text: HB56A132 Series 1,048,576-word x 32-Bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A132 is a 1 M x 32 dynamic RAM module, mounted 8 pieces of 4-Mbit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 is 72-pin single in-line package.
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HB56A132
576-word
32-Bit
ADE-203Rev.
HM514400CS/CLS)
72-pin
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Untitled
Abstract: No abstract text available
Text: HM514900A/AL, HM51S4900A/AL Series Preliminary 524,288-Word x 9-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514900A are CMOS dynamic RAM orga nized as 524,288-word x 9-bit. HM514900A have realized higher density, higher performance and various functions by
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HM514900A/AL,
HM51S4900A/AL
288-Word
HM514900A
28-pin
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEM S1E D Dolimi I OCH « H I T S HB56D232BS/SBS Series ~ 2,097,152-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D232BS/SBS is a 2M x 32 dynamic RAM mod ule, mounted 16 pieces of 4 Mbit DRAM HM514400AJ sealed in SOJ package. An outline of the HB56D232BS/
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HB56D232BS/SBS
152-Word
32-Bit
HM514400AJ)
HB56D232BS/
72-pin
HB56D232BS/SBS
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Nippon capacitors
Abstract: No abstract text available
Text: HB56SW872ES-6/7 8,388,608-word x 72-bit High Density Dynamic RAM Module ADE-203-765A Z Rev. 1.0 Apr. 4, 1997 Description The HB56SW872ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56SW872ES-6/7
608-word
72-bit
ADE-203-765A
HB56SW872ES
16-Mbit
HM51W16405)
16-bit
74LVT16244)
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: HB56SW464DBJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-688A Z Rev. 1.0 May. 30, 1997 Description The H B56 SW 46 4D BJ is a 4M x 64 dynamic R A M Sm all Outline Dual In-line Memory Module (S.O .D IM M ), mounted 16 pieces of 16-Mbit D R A M (HM51W17805) sealed in TC P package and 1 piece
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HB56SW464DBJ
304-word
64-bit
ADE-203-688A
16-Mbit
HM51W17805)
24C02)
B56SW
144-pin
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/N b7E D • 44^203 0024374 HM514800A/AL, HM51S4800A/AL Series 7 b cl ■ HITE Preliminary 524,286-Word x 8-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi HM514800A are CMOS dynamic RAM orga nized as 524,288-word x 8-bit. HM514800A have realized
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HM514800A/AL,
HM51S4800A/AL
286-Word
HM514800A
288-word
28-pin
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Untitled
Abstract: No abstract text available
Text: HM511665/L Series 65,536-Word x 16-Bit Dynamic RAM • DESCRIPTION HM511665JP Series The Hitachi HM511665/HM511665L are CMOS dynamic RAM organized as 65,536-word x 16-bit. HM5116 6 5 /1 1665L have realized higher density, higher performance and vari ous functions by employing 0.8 jum CMOS process technol
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HM511665/L
536-Word
16-Bit
HM511665JP
HM511665/HM511665L
16-bit.
HM5116
1665L
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IRS12
Abstract: HD63140 IRE5 IRE-5 HD63140 CP fnr 10k NL 714 DP-64S HD6301X UDR20
Text: H D 6 3 1 4 - Universal Pulse Processor UPP Description 24 16-bit universal re gisters (UDR) 16 I/O term inals (8 internal re g isters for p ulse I/O control are also provided) Interrupts can occur a t th e fallin g or ris
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HD63140
10-bit
1024-byte
16-bit
IRS12
IRE5
IRE-5
HD63140 CP
fnr 10k
NL 714
DP-64S
HD6301X
UDR20
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW272E Series 2,097,152-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-727A Z Rev. 1.0 Feb. 20, 1997 Description The HB56UW272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56UW272E
152-word
72-bit
ADE-203-727A
16-Mbit
HM51W17805)
16-bit
74LVT16244)
Nippon capacitors
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PDF
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HD63645F
Abstract: bmnk, hitachi d63645
Text: H D63645F/H D64645F LCD Timing Controller LCTC D escription Pin A rrangem ent The HD63645F/HD64645F LCTC is a control LSI for large size dot m atrix liquid crystal displays. The LCTC is softw are com patible w ith th e HD6845 CRTC, since its p rogram
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D63645F/H
D64645F
HD63645F/HD64645F
HD6845
D64645F
150pF
HD63645F
bmnk, hitachi
d63645
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CAPACITOR 64 680 4J
Abstract: 11DQ12 8dq9 Nippon capacitors
Text: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)
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HB56EW472ETC-A
HB56EW872ETK-A
32/64MB
72-bit,
ADE-203-844
HB56EW
472ETC-A,
872ETK-A
CAPACITOR 64 680 4J
11DQ12
8dq9
Nippon capacitors
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24C02 W6
Abstract: No abstract text available
Text: HB56UW1673EJN Series, HB56UW1665EJN Series 1 6 7 7 7 2 16-w ord x 72-bit H igh D en sity D yn am ic R A M M odule 1 6 7 7 7 2 16-w ord x 64-bit H igh D en sity D yn am ic R A M M odule HITACHI A D E -203-655 Z Preliminary Rev. 0.0 Sep. 9, 1996 D escrip tion
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HB56UW1673EJN
HB56UW1665EJN
72-bit
64-bit
HB56UNV1673EJN
64-Mbit
HM5165405AJ)
24C02)
24C02 W6
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