Untitled
Abstract: No abstract text available
Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance N-channel: R DS o1i < 0.17 ¿1, V GS = 10 V, ID= 2.5 A P-channel: R DS(o1i) < 0.2 ¿1, V GS = -1 0 V, ID= -2 .5 A
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6AM11
2SK970,
2SK1093
2SJ172,
2SJ175
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Untitled
Abstract: No abstract text available
Text: 2SC4744 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in dampen diode type • Isolated package; TO-3PFM Outline 2SC4744 Absolute Maximum Ratings Ta = 25 °C
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2SC4744
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2297 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V • Built-in damper diode type Outline T O -3 P 2SD2297 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit
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2SD2297
D-85622
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2SC4742
Abstract: No abstract text available
Text: 2SC4742 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline T O -3 P 2SC4742 Absolute Maximum Ratings Ta = 25 °C Item Symbol
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2SC4742
D-85622
2SC4742
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Untitled
Abstract: No abstract text available
Text: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2110 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 80 V V CEo 80 V V EB0 7 V Collector to em itter voltage
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2SD2110
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage VCEo 120 V Emitter to base voltage
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2SD1606
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A In 1 2 1. B a se 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C
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2SD2337
2SB1530
D-85622
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SN200
Abstract: No abstract text available
Text: 2SD1136 Silicon NPN Triple Diffused HITACHI Application Power switching TV horizontal deflection output Outline T O -2 2 0 A B 2SD1136 Absolute Maximum Ratings Ta = 25 °C Item Sym bol Ratings Unit Collector to base voltage ^G B O 200 V VCEo 80 V V EB0 5
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2SD1136
D-85622
SN200
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Untitled
Abstract: No abstract text available
Text: 2SD864 K Silicon NPN Triple Diffused HITACHI Application Medium speed and power switching complementary pair with 2SB765(K) Outline TO -220A B I 1 Base 2. C ollector (Flange) 3. Emitter 1 2 4 k£2 (Typ) 300 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C)
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2SD864
2SB765
-220A
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SC4747 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High breakdown voltage VCB0= 1500 V • High speed switching tf < 0.3 ps Outline I 2. C o lle c to r 3. E m itte r 2SC4747 Absolute Maximum Ratings Ta = 25 °C
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2SC4747
D-85622
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2SD1527
Abstract: No abstract text available
Text: 2SD1527 Silicon NPN Triple Diffused HITACHI Application High voltage power amplifier Outline T 0 -2 2 0 A B . 1 B a se 2. C o lle c to r F la n g e 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^G B O
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2SD1527
D-85622
2SD1527
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Untitled
Abstract: No abstract text available
Text: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature • Built-in High voltage zener diode 300 V • High Speed switching Outline TO -220AB 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage
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2SD1976
-220AB
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2SC4927
Abstract: QE2000
Text: 2SC4927 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High breakdown voltage VCES = 1500 V • Built-in damper diode type • Isolated package TO-3PFM Outline 2SC4927 Absolute Maximum Ratings Ta = 25 °C
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2SC4927
D-85622
2SC4927
QE2000
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Untitled
Abstract: No abstract text available
Text: 2SD1127 K Silicon NPN Triple Diffused HITACHI Application Power switching Outline T O -2 2 0 A B 2SD1127(K) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Ratings Unit Collector to base voltage ^GBG 120 V Collector to em itter voltage VCE0 120 V Emitter to base voltage
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2SD1127
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Untitled
Abstract: No abstract text available
Text: 2SC4743 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Feature • High speed switching time tf = 0.4 ps max • High breakdown voltage VCB0= 1500 V Outline 1. B a se 2. C o lle c to r F la n g e 3. E m itte r
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2SC4743
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SC4692 Silicon NPN Triple Diffused HITACHI Application EDTV/HDTV horizontal deflection output Features • High speed switching 0.5 ps Max • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline T O -3 P F M 1. B a se 2. C o lle c to r
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2SC4692
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2105 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 120 V Collector to em itter voltage Emitter to base voltage
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2SD2105
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SC4589 Silicon NPN Triple Diffused HITACHI Application CTV/character display horizontal deflection output Features • High speed switching tf 2 0.5 ps • High breakdown voltage VCB0 = 1500 V • Isolated package; TO-3PFM Outline T O -3 P F M 1. B a se 2. C o lle c to r
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2SC4589
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage
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2SD1605
2SB1105
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2298 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V Outline 1. B a se 2. C o lle c to r F la n g e 3. E m itte r 2SD2298 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol
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2SD2298
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD1603,2SD1604 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1603 2SD1604 Unit Collector to base voltage
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2SD1603
2SD1604
2SB1103
2SB1104
2SD1603
2SD1603,
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SB1391 Silicon PNP Triple Diffused HITACHI Application Power switching Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -1 2 0 V Collector to em itter voltage VCEo -1 2 0 V Emitter to base voltage
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2SB1391
D-85622
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d1609
Abstract: D1610
Text: 2SD1609,2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage
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2SD1609
2SD1610
2SB1109
2SB1110
2SD1609
2SD1609,
D-85622
d1609
D1610
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Untitled
Abstract: No abstract text available
Text: 2SD1115 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 4.5 k£2 (Typ) 250 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings
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2SD1115
-220A
D-85622
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