1658 NEC
Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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PX10020EJ08V0PF
1658 NEC
SW SPDT
FRS transceiver
SW-SPDT
upc8112tb
2SC5288
NE52418
RF basics
NE5510279A
discrete LNA D
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
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NE6510379A
Abstract: NE6510379A-T1 0949 NEC TANTALUM
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear
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NE6510379A
NE6510379A
NE6510379A-T1
0949
NEC TANTALUM
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NE6510179A
Abstract: NE6510379A NE651R479A NE651R479A-T1
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
NE6510379A
NE651R479A-T1
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NE6510379A
Abstract: NE6510379A-T1 nec 1761 hjfet application
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and
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NE6510379A
NE6510379A
NE6510379A-T1
nec 1761
hjfet application
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NE6510179A
Abstract: NE6510379A NE651R479A NE651R479A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
NE6510379A
NE651R479A-T1
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nec 772
Abstract: NE6510179A NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear
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NE6510179A
NE6510179A
nec 772
NE6510179A-T1
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NE6510179A
Abstract: NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 watt of output power CW with high linear
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NE6510179A
NE6510179A
NE6510179A-T1
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Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
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nec k 4145
Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
nec k 4145
NE6510379A
NE651R479A-T1
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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NE6510179A
Abstract: NE6510179A-T1
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear
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NE6510179A
NE6510179A
NE6510179A-T1
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UPC8236
Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ39V0PF
UPC8236
2SC5508
NE3512S02
digital tv tuner
hjfet
NESG240033
SW SPDT
NE5510279A
antenna for microwave CATV materials
ANTENNA parabolic
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NE5510279A
Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is
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gaas fet micro-X Package
Abstract: P1014 NE76184A-T1 t25000 gaas fet micro-X
Text: User’s Manual TAPE AND REEL SPECIFICATION FOR MICRO-X PACKAGE AND MOLD PACKAGE HJ-FET & GaAs MES FET Document No. P10149EJ6V0UM00 (6th edition) Date Published October 1997 N 1989 Printed in Japan [MEMO] 2 No part of this document may be copied or reproduced in any form or by any means without the prior written
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P10149EJ6V0UM00
gaas fet micro-X Package
P1014
NE76184A-T1
t25000
gaas fet micro-X
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NE34018 equivalent
Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and
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AN1033
AN1022
NE34018 equivalent
FET model
AN1022
AN1033
NE34018
Alpha 1000 GaAsFET
as 15-f
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UPC8236
Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4
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R09CA0001EJ0100
PX10020EJ42V0PF
UPC8236
2SC5508
2SC3357/NE85634
CATV MODULATOR
NE5510279A
upg2406t6r
Microwave GaAs FET catalogue
NE3515S02
NE662M04
NE3514S02
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs HJ-FET N E 6 5 1 1 7 9 A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency
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NE6510179A
NE6510179A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high
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NE651R479A
NE651R479A
NE6510179A
NE6510379A.
R479A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear
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NE6510379A
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a 1232 nec
Abstract: NE6510179A nec 1565 NEC TANTALUM
Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency
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NE6510179A
NE6510179A
a 1232 nec
nec 1565
NEC TANTALUM
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear
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NE6510379A
NE6510379A
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x 1535 ce
Abstract: 0537
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high
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NE651R479A
NE6510179A
NE6510379A.
x 1535 ce
0537
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NE6510179A
Abstract: hjfet
Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER:+31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, f = 850 MHz, Pin = +20 dBm
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NE6510179A
NE6510179A
hjfet
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