Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HL6341MG Search Results

    HL6341MG Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6341MG Agilent Technologies Circular Beam Low Operating Current Original PDF
    HL6341MG Hitachi Semiconductor Laser Diode, 6mW Power, 640nm Wave Length, 20mA Current Original PDF
    HL6341MG OpNext Circular Beam Low Operating Current Original PDF
    HL6341MG98 OpNext Laser Diode, 6mW Power, 640nm Wave Length, 20mA Current Original PDF

    HL6341MG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    opnext

    Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


    Original
    PDF D-85622 opdb-090103 opnext HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g

    HL6340MG

    Abstract: HL6341MG
    Text: HL6340MG/41MG ODE-208-035A Z Rev.1 Feb. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original
    PDF HL6340MG/41MG ODE-208-035A HL6340MG/41MG HL6340MG/41MG: HL6341MG HL6340Moduct. HL6340MG HL6341MG

    Maru

    Abstract: HL6312G HL6325G HL6335G HL6336G HL6340MG HL6341MG Hitachi DSA0047 Hitachi laser diodes
    Text: Hitachi Releases "MARU Beam Series" of Red Laser Diodes Achieving World First of Circular Beam with 1.2 typ. Aspect Ratio in 635 nm Band Wavelength  For simpler optical system configuration in laser application products such as laser markers, together


    Original
    PDF HL6335G HL6340MG Maru HL6312G HL6325G HL6336G HL6341MG Hitachi DSA0047 Hitachi laser diodes

    HL6340MG

    Abstract: HL6341MG
    Text: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original
    PDF HL6340MG/41MG ODE-208-035 HL6340MG/41MG HL6340MG/41MG: HL6340MG HL6340MG HL6341MG

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original
    PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: HL6340MG/41MG Circular Beam Low Operating Current ADE-208-1437B Z Rev.2 Mar. 2002 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These


    Original
    PDF HL6340MG/41MG ADE-208-1437B HL6340MG/41MG HL6340MG/41MG: HL6340MG Hitachi DSA00280

    opnext

    Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


    Original
    PDF D-85622 opdb-09 opnext laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g

    laser diode 940 nM 200mW

    Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
    Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and


    Original
    PDF 200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package

    HL6312G

    Abstract: HL6340MG HL6341MG
    Text: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437C Z Rev.3 Jan. 2003 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These


    Original
    PDF HL6340MG/41MG ODE-208-1437C HL6340MG/41MG HL6340MG/41Mhe HL6312G HL6340MG HL6341MG

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


    Original
    PDF 2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


    Original
    PDF ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G

    sld1233

    Abstract: SLD1233VL advantest TR6143 DIODE 36G marking code SLD68518460 DL-3148-234 laser diode DVD Mechanical Layout 4039-01 SICK cross refeRENCE SLD67018250
    Text: Quick Reference Guide for Visible and Infrared Laser Diodes ADE-308-007C Rev.3 Aug. 2002 Hitachi Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the


    Original
    PDF ADE-308-007C sld1233 SLD1233VL advantest TR6143 DIODE 36G marking code SLD68518460 DL-3148-234 laser diode DVD Mechanical Layout 4039-01 SICK cross refeRENCE SLD67018250

    Untitled

    Abstract: No abstract text available
    Text: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original
    PDF HL6340MG/41MG HL6340MG/41MG ODE-208-035 HL6340MG/41MG: HL6340MG HL6341MG

    HL6312G

    Abstract: HL6340MG HL6341MG
    Text: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437D Z Rev.4 Mar. 2005 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are


    Original
    PDF HL6340MG/41MG ODE-208-1437D HL6340MG/41MG HL6340MG/41MG: HL6312G HL6340MG HL6341MG

    Untitled

    Abstract: No abstract text available
    Text: HL6340MG/41MG ODE2019-00 M Rev.0 Aug. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 m band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original
    PDF HL6340MG/41MG HL6340MG/41MG ODE2019-00 HL6340MG/41MG: HL6340MG HL6341MG