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    Untitled

    Abstract: No abstract text available
    Text: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HLX6408 5x10srad 1x101 1x109

    1A15

    Abstract: honeywell hr 20 HLX6408
    Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)


    OCR Scan     		PDF 5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408