Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C10FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C1OFU Unit in mm V H F — UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads ? 1 +n 1 M A X IM U M RATINGS (Ta = 25°C)
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HN2C10FU
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HN2C10FU
Abstract: No abstract text available
Text: TO SH IBA HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING
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HN2C10FU
HN2C10FU
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2J1B
Abstract: HN2C10FU
Text: TOSHIBA HN2C10FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C10FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN2C10FU
2J1B
HN2C10FU
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transistor marking c3n
Abstract: No abstract text available
Text: TO SH IB A HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M 9 f 1 fi F 11 • ■ ■ w u 'm ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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HN2C10FU
transistor marking c3n
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HN2C10FU
Abstract: No abstract text available
Text: TOSHIBA HN2C10FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN2C10FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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HN2C10FU
HN2C10FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C1OFU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 + 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C10FU
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