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Toshiba America Electronic Components HN4C51J(TE85L,F) TRANS 2NPN 120V 0.1A SMV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN4C51J(TE85L,F)	Digi-Reel	17,313		1	1 $0.56 10 $0.348 100 $0.56 1000 $0.14966 10000 $0.14966	Buy Now
	HN4C51J(TE85L,F)	Cut Tape	17,313		1	1 $0.56 10 $0.348 100 $0.56 1000 $0.14966 10000 $0.14966	Buy Now
	HN4C51J(TE85L,F)	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1273	Buy Now
Mouser Electronics	HN4C51J(TE85L,F)		7,527			1 $0.49 10 $0.311 100 $0.205 1000 $0.141 10000 $0.093	Buy Now
Newark	HN4C51J(TE85L,F)	Cut Tape	2,940		5	1 $0.417 10 $0.32 100 $0.188 1000 $0.11 10000 $0.11	Buy Now
Chip One Stop	HN4C51J(TE85L,F)	Cut Tape	2,839			1 - 10 $0.386 100 $0.174 1000 $0.132 10000 $0.132	Buy Now

HN4C51J Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HN4C51J		Toshiba	Transistor Silicon NPN Epitaxial Type (PCT Process)		Original	PDF
HN4C51J(TE85L,F)		Toshiba	HN4C51J - Trans GP BJT NPN 120V 0.1A 5-Pin SMV T/R		Original	PDF

HN4C51J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)	Original	HN4C51J	PDF
HN4C51J Abstract: No abstract text available Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)	Original	HN4C51J HN4C51J	PDF
Untitled Abstract: No abstract text available Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)	Original	HN4C51J	PDF
HN4C51J Abstract: No abstract text available Text: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)	Original	HN4C51J HN4C51J	PDF
HN4C51J Abstract: No abstract text available Text: HN4C51J 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 HN4C51J ○ 低周波増幅用 ○ 低周波低雑音用単位: mm • スーパーミニ(5 端子)パッケージに 2 素子を内蔵しています。 • 高耐圧です	Original	HN4C51J 200mW HN4C51J	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Text: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA8030 lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558	PDF

GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF
5252 0.9V 1.5V led driver Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT Text: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors	Original	BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT	PDF