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Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8240T6N
PC8240T6N
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Abstract: No abstract text available
Text: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output
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PD5754T7A
R09DS0012EJ0100
PD5739T7A
28-pin
28-pnesas
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE5500234
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2159T6R
PG2159T6R
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Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
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Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HS350
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2151T5K
PG2151T5K
30anty
HS350
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HS350
Abstract: PG2155TB UPG2155TB UPG2155TB-A
Text: GaAs INTEGRATED CIRCUIT UPG2155TB NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.
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UPG2155TB
PG2155TB
HS350
UPG2155TB
UPG2155TB-A
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c3220
Abstract: UPC3220GR-E1-A IR260 617DB-1010 UPC3220GR NOTE U-134
Text: DATA SHEET NEC's LOW DISTORTION DOWN-CONVERTER IC UPC3220GR FOR DIGITAL CATV FEATURES DESCRIPTION • LOW DISTORTION: IIP3 = +1.0 dBm TYP. • WIDE AGC DYNAMIC RANGE: GCRtotal = 45.5 dB TYP. NEC's UPC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.
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UPC3220GR
UPC3220GR
16-pin
c3220
UPC3220GR-E1-A
IR260
617DB-1010
NOTE U-134
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20-PIN
Abstract: HS350 PG2181T5R
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2181T5R HIGH POWER DP4T SWITCH FOR WiMAX DESCRIPTION The μPG2181T5R is a GaAs MMIC high power DP4T switch which was developed for WiMAX. This device can operatefrom 2.3 to 3.8 GHz, with low insertion loss and high isolation.
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PG2181T5R
PG2181T5R
20-pin
HS350
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
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PC8230TU
PC8230TU
HS350
WS260
IR260
PU10612EJ01V0DS
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PG2010TB
Abstract: pg2010 F MARKING 6PIN
Text: GaAs INTEGRATED CIRCUIT PG2010TB L-BAND SPDT SWITCH DESCRIPTION The PG2010TB is GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2010TB
PG2010TB
PG10317EJ02V0DS
pg2010
F MARKING 6PIN
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PC3225
Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
HS350
WS260
IR260
PU10734EJ01V0DS
PC3225
transistor marking 6U ghz
PC2710TB
C3J marking
max3139
PC2708TB
PC2709TB
marking c1d
PC3223TB
marking c3j
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Abstract: No abstract text available
Text: Preliminary Data Sheet PG2411T6R R09DS0020EJ0100 Rev.1.00 Apr 25, 2011 GaAs Integrated Circuit SPDT Switch for 1 GHz to 8 GHz DESCRIPTION The μPG2411T6R is a GaAs MMIC SPDT Single Pole Double Throw switch which was designed for 1 GHz to 8 GHz applications, including dual-band wireless LAN.
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PG2411T6R
PG2411T6R
R09DS0020EJ0100
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DFT301-801
Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
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PC8179TK
PC8179TK
PC8179TB
HS350
WS260
IR260
PU10059EJ02V0DS
DFT301-801
DFT301
GRM40CH102J50PT
GRM39CH100D50PT
GRM39CH080D50PT
PC8128TB
GRM39CH050C50PT
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NE552R479A
Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.
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NE552R479A
NE552R479A
mch215f104z
0X00
GSM1900
MCH185A101JK
NE552R479A-T1A-A
433 mhz rf power amplifier module efficiency
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GRM1552C1H
Abstract: GRM155B11H102KA01B RO4003 GRM155B11 GRM155B11H grm1552c 12-PIN UPG2035T5F UPG2035T5F-E2-A 142-0721
Text: DATA SHEET NEC's BROADBAND GaAs MMIC DPDT SWITCH UPG2035T5F FOR 2.4 GHz AND 5 GHz WLAN FEATURES • DESCRIPTION NEC's UPG2035T5F is a GaAs MMIC DPDT switch for 2.4 GHz and 5 GHz dualband Wireless LAN. OPERATING FREQUENCY: 2.4 to 2.5 GHz and 4.9 to 6.0 GHz specified
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UPG2035T5F
UPG2035T5F
GRM1552C1H
GRM155B11H102KA01B
RO4003
GRM155B11
GRM155B11H
grm1552c
12-PIN
UPG2035T5F-E2-A
142-0721
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HS350
Abstract: uPG2158T5K uPG2158T5K-E2-A VP215
Text: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2158T5K L,S-BAND SPDT SWITCH DESCRIPTION The uPG2158T5K is a GaAs MMIC for L,S-band SPDT Single Pole Double Throw which were designed for mobile phone and the another L,S-band applications. This device can operate frequency from 0.05GHz to 3.0GHz, having the low insertion loss and high isolation.
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uPG2158T5K
05GHz
HS350
uPG2158T5K-E2-A
VP215
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NEM090603M-28
Abstract: T-91M
Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090603M-28 N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final
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NEM090603M-28
NEM090603M-28
T-91M
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uPG2214TK
Abstract: HS350 PG2214TK VP215 UPG2214TK-E2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2214TK
PG2214TK
uPG2214TK
HS350
VP215
UPG2214TK-E2
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