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    HSCH9161 Search Results

    HSCH9161 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HSCH-9161 Agilent Technologies Millimeter wave zero bias GaAs Schottky diode Original PDF
    HSCH-9161 Agilent Technologies RF Detector Diode, Schottky, Single, EHF, Beam Lead, 2-Pin Original PDF
    HSCH-9161 Avago Technologies Millimeter wave zero bias GaAs Schottky diode Original PDF
    HSCH9161 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    HSCH9161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSCH-9161

    Abstract: No abstract text available
    Text: Zero-Bias Beam Lead GaAs Detector Diodes Part Cj Rv Max. Number pF (kΩ) HSCH-9161 0.035 7.5 3-1 Γ (mV/µW) Functional through (GHz) Page 0.5 110 3-83


    Original     		PDF HSCH-9161 HSCH-9161

    HSCH-9161

    Abstract: United Detector silicon diode application note 979
    Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It


    Original     		PDF HSCH-9161 HSCH-9161 5988-6209EN AV02-3625EN United Detector silicon diode application note 979

    10 GHz pin diode

    Abstract: 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE
    Text: HSCH-9161 GaAs Detector Diode Sensitivity 10 GHz and 30 GHz RL = 10Kohms; Diode mounted in a 2.4mm HP detector package. 30 GHz 10 GHz Pin dBm Vdet (mV) Vdet (mV) -40 0.07 0.07 -30 0.36 0.38 -20 3.2 3.4 -10 28.7 30 -5 71 73 160 163 2 216 219 3 250 253 5 334


    Original     		PDF HSCH-9161 10Kohms; 10 GHz pin diode 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE

    04B SOT363

    Abstract: 35 micro-X Package MARKING CODE F
    Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)


    Original     		PDF HPMX-5001 SSOP-28 TQFP-32 TQFP-48 04B SOT363 35 micro-X Package MARKING CODE F

    HSCH-9401

    Abstract: e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8
    Text: Agilent Wireless Semiconductor Solutions for RF and Microwave Communications Semiconductor Solutions for the Connected World www.agilent.com/view/rf Agilent is Accelerating Progress in Wireless Communications. Mobile communications continue to grow in size and importance.


    Original     		PDF 7844EN 5988-7928EN HSCH-9401 e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8

    HSCH-9161

    Abstract: AGILENT TECHNOLOGIES 9161 ghz Diode HSCH9161 rfin
    Text: Agilent HSCH-9161 GaAs Detector Diode Sensitivity Measurements Product Note #12 March 1999 Description The HSCH-9161 was installed into a 2.4mm, 50 GHz diode detector housing the same housing used for Agilent Technologies Coaxial Detector 33330E . Detector voltage measurements were


    Original     		PDF HSCH-9161 33330E) AGILENT TECHNOLOGIES 9161 ghz Diode HSCH9161 rfin

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    AGILENT TECHNOLOGIES 9161

    Abstract: HSCH-9161 application note 979 HSMS-2850
    Text: Agilent HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified


    Original     		PDF HSCH-9161 HSCH-9161 5988-5907EN 5988-6209EN 10E-12 10E-6 AGILENT TECHNOLOGIES 9161 application note 979 HSMS-2850

    micro-x marking code E1

    Abstract: 0004E4 SOT 86 MARKING E4
    Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)


    Original     		PDF SSOP-28 TQFP-48 micro-x marking code E1 0004E4 SOT 86 MARKING E4

    5082-3188

    Abstract: HP 5082-3081 hp 5082* guide
    Text: Non-Surface Mount PIN and Schottky␣ Diodes Selection Guide General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Applications Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) 5082-2800 (1N5711) High level detecting, mixing, switching, gating, sampling, wave shaping


    Original     		PDF 1N5711) 1N5712) 1N5767) Applicat45 HSCH-9401 5965-7994E 5968-0548E 5082-3188 HP 5082-3081 hp 5082* guide

    micro-x marking code E1

    Abstract: SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121
    Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)


    Original     		PDF OLERANCES400 SSOP-28 TQFP-32 TQFP-48 micro-x marking code E1 SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    N40 DIODE

    Abstract: HSCH-9161 PB26 farad PARALLEL CAPACITOR CAP-12 diode N40
    Text: HSCH-9161 Diode Model Product Note #02 September1998 C1 11 fF D1 D2 Model Description PWR DBM CUR MA This product note provides a Spice model and a Libra model of the HSCH-9161 discrete beam lead GaAs diode. This diode is a modified barrier Schottky diode which features very low forward voltage


    Original     		PDF HSCH-9161 September1998 12E-6 30E-15 84E-6 HP9161 N40 DIODE PB26 farad PARALLEL CAPACITOR CAP-12 diode N40

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316

    HSCH-9161

    Abstract: No abstract text available
    Text: Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance At room temperature and frequencies under 10 GHz, the silicon zero bias Schottky detectors HSMS-0005 and HSMS-2850 offer comparable performance. However, the HSCH-9161 yields


    Original     		PDF HSCH-9161 HSMS-0005 HSMS-2850 HSCH-9161 5965-8854E

    Untitled

    Abstract: No abstract text available
    Text: Agilent HSCH-9161, -9162 Zero Bias Beamlead Detector Diodes Data Sheet Features • Low junction capacitance • Lower temperature coefficient than silicon 231 9.1 Description Agilent’s HSCH-9161 and HSCH-9162 are GaAs beamlead detector diodes, fabricated using


    Original     		PDF HSCH-9161, HSCH-9161 HSCH-9162 5965-8854E 5988-5907EN 10E-12 10E-6 HSCH-916x

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    SCHOTTKY DIODE SOT-143

    Abstract: sot 23 x 316 HSCH-5312 HSMS-285A HSMS-280X HSMS-281X HSMS-282X HSMS-285X HSMS-286X HSMS-8101
    Text: Schottky Diode Selection Guides SOT-23/-143 General Purpose Schottky-Barrier Diodes Part VBR V VF (mV) VF @ IF (V @ mA) Number (min) (max) (max) HSMS-282X HSMS-281X HSMS-280X 15 20 70 340 400 400 Ct (pF) (max) RD (Ω) (typ) Page 1.0 1.2 2.0 12 15 35 3-36


    Original     		PDF OT-23/-143 HSMS-282X HSMS-281X HSMS-280X OT-23; OT-143. HSCH-9101 HSCH-9201 HSCH-9251 SCHOTTKY DIODE SOT-143 sot 23 x 316 HSCH-5312 HSMS-285A HSMS-280X HSMS-281X HSMS-282X HSMS-285X HSMS-286X HSMS-8101

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    diode hp 2800 SMD

    Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-2805 HSMS-2807 HSMS-2808 HSMP-2810 HSMS-2812 HSMS-2813 diode hp 2800 SMD diode hp 2800 smd schottky diode T4 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751

    1gg5

    Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
    Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161


    Original     		PDF HSCH-9161 HSCH-9161 HSCH-9161/rev 1gg5 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode

    HSCH-9161

    Abstract: No abstract text available
    Text: What H E W L E T T * mLlíM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features Applications • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength


    OCR Scan     		PDF HSCH-9161 HSMS-0005 HSMS-2850 HSCH-9161 10E-12 12xlO 84xlO 10C5Hz

    ZERO Bias diode

    Abstract: 12Xl HSCH-9161
    Text: What HEW LETT mLfiM P A C K A R D Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Temperature Coefficient than Silicon • Durable Construction— Typical 6 gram beamlead strength • Operation to 110 GHz


    OCR Scan     		PDF HSCH-9161 HSCH-9161 10E-12 12xlOE-6 84xlOE-6 ZERO Bias diode 12Xl

    DIODE 839

    Abstract: HSCH-9161 zero bias schottky diode detector zero bias diode
    Text: TOSI WLEMHEWLETT PACKARD Zero Bias Beamlead Detector Diode Technical Data HSCH-9161 Features • Low Junction Capacitance • Lower Tem perature C oefficient than Silicon • Durable C onstruction— Typical 6 gram beam lead strength • O peration to 110 GHz


    OCR Scan     		PDF HSCH-9161 HSCH-9161 5965-8854E DIODE 839 zero bias schottky diode detector zero bias diode