30S124
Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
HSG2002
REJ03G0444-0300
PWQN0008ZA-A
30S124
KA 1046 Y 839
marking code 576
zo 103 ma
A 1757
|
PDF
|
KA 1046 Y 839
Abstract: KA 1046 Y 840
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
HSG2002
REJ03G0444-0300
PWQN0008ZA-A
KA 1046 Y 839
KA 1046 Y 840
|
PDF
|
WQFN0202-8V
Abstract: No abstract text available
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
HSG2002
REJ03G0444-0100
WQFN0202-8V
vo-900
Unit2607
WQFN0202-8V
|
PDF
|
RQG2003
Abstract: SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
Text: Renesas Technology Releases SiGe Power Transistor Achieving Industry’s Highest Performance Level for Power Amplifier Use in Wireless LAN Terminals, etc. Offering 2.4 GHz/5 GHz dual-band compatibility and allowing implementation of low-power-consumption products
|
Original
|
RQG2003
HSG2002,
tranRQG2003
WQFN0202
SiGe POWER TRANSISTOR
WQFN0202
RF Radio frequency IC, 8pin
2.4 ghZ rf transistor
RF output cordless phone
transistor 2.4 ghz
RF TRANSISTOR 2.4 GHZ
SiGe RF TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
|
Original
|
REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
