Untitled
Abstract: No abstract text available
Text: User's Guide SNVA106B – September 2005 – Revised April 2013 AN–1367 LM5115 HV DC Evaluation Board 1 Introduction The LM5115 HV DC evaluation board provides a synchronous buck dc-dc converter using the LM5115 secondary side post regulator control IC.
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SNVA106B
LM5115
LM5115
215kHz,
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ignition driver
Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
ignition driver
fairchild Resonant IC
FJAFS1510ATU
FDC655
HV cascode smps
cascode smps
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irfcg20
Abstract: HV MOSFET
Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION
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SCP-4926
BYV26E
IRFCG20
HV MOSFET
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Untitled
Abstract: No abstract text available
Text: tSENSITRON SCP-4926 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1138, REV. ENG. B HV MOSFET MODULATOR DESCRIPTION: AN 1800 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION
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SCP-4926
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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HV MOSFET
Abstract: 400v 20 amp mosfet 2N7002 SCP-4926
Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION
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SCP-4926
2N7002
HV MOSFET
400v 20 amp mosfet
SCP-4926
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions
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IXFL38N100P
300ns
100ms
38N100
7-14-09-D
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SCP-4926
Abstract: 2N7002
Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION
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SCP-4926
SCP-4926
2N7002
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IXFL38N100P
Abstract: 38N100
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol
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IXFL38N100P
300ns
100ms
38N100
7-14-09-D
IXFL38N100P
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IRFCG20
Abstract: MOSFET 50 amp 1000 volt
Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6
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SCP-4926
Isol1138,
BYV26E
IRFCG20
MOSFET 50 amp 1000 volt
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123B16
Abstract: No abstract text available
Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings
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IXFL32N120P
300ns
338B2
123B16
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings
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IXFL36N110P
300ns
338B2
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fairchild power bjt
Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver
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FJP2160D
fairchild power bjt
fdc6551
cascode mosfet switching
ESBC
j2160
J2160D
C 1008 y transistor
input output bjt npn transistor
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PZT Transducer
Abstract: ultrasonic generator schematic ultrasound transducer 10MHz ultrasound transducer circuit driver PZT Transducer ultrasonic Sensor OPB3 ultrasound piezoelectric design probe transducer ultrasonic piezoelectric transducer driver mems ultrasonic transducers ultrasound transducer Input output waveforms
Text: Supertex inc. MD1711DB2 MD1711 + TC6320 Demoboard Five-Level, Dual Channel ±100V 2.0A RTZ Pulser Features ► ► ► ► ► ► ► ► Five-level, dual-channel ultrasound transmitter MD1711 driving six TC6320 HV MOSFETs Design for RTZ waveforms outputs
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MD1711DB2
MD1711
TC6320
MD1711
/-100V
MD1711DB2
PZT Transducer
ultrasonic generator schematic
ultrasound transducer 10MHz
ultrasound transducer circuit driver
PZT Transducer ultrasonic
Sensor OPB3
ultrasound piezoelectric design probe transducer
ultrasonic piezoelectric transducer driver
mems ultrasonic transducers
ultrasound transducer Input output waveforms
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tl 078
Abstract: No abstract text available
Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings
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IXFL38N100P
300ns
338B2
tl 078
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Untitled
Abstract: No abstract text available
Text: NCP4810 X2 Capacitors Discharger The NCP4810 is a HV switch suitable for implementation of the X2 capacitor discharge function in applications with extremely low standby consumption requirements. It contains two high voltage MOSFETs with 700 V peak capabilities that can be connected directly
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NCP4810
NCP4810
NCP4810/D
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C
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40N110P
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXFL32N120P
300ns
338B2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXFL30N120P
300ns
30N120P
9-20-07-B
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AN-978
Abstract: "AN-978" IR2110 AN-978 IR2110 inverter using irs2110 PWM IR2112 IRF540 ir2110 Application Note AN-967 PWM IR2117 dc to dc converter IR2110 INVERTER SCHEMATIC full bridge ir2110 Inverter IR2110
Text: Application Note AN-978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Table of Contents Page Gate drive requirement of high-side devices. 2 A typical block diagram . 3
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AN-978
AN-967
com/technical-info/appnotes/an-967
AN-961
com/technical-info/appnotes/an-961
AN-959
com/technical-info/appnotes/an-959
AN-978
"AN-978" IR2110
AN-978 IR2110
inverter using irs2110
PWM IR2112 IRF540
ir2110 Application Note AN-967
PWM IR2117 dc to dc converter
IR2110 INVERTER SCHEMATIC
full bridge ir2110
Inverter IR2110
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44n10
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000
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IXFL44N100P
300ns
44N100P
4-01-08-D
44n10
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TOPSWITCH
Abstract: "Brushless DC Motor Drive Circuit" INT201PFI switched reluctance motor parameter 566B A 1469 mosfet brushless dc motor speed control simple circuit 285D INT200 INT201
Text: INT201 High-side Driver IC Floating Inputs Floating High-side Drive Product Highlights Floating Control Inputs • Connects directly to INT200 or INT202 HSD outputs • No external level translators or transformers required HV Gate Drive Output for an External MOSFET
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INT201
INT200
INT202
sink/150
INT200
PI-1764-020196
TOPSWITCH
"Brushless DC Motor Drive Circuit"
INT201PFI
switched reluctance motor parameter
566B
A 1469 mosfet
brushless dc motor speed control simple circuit
285D
INT201
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IXFL30N120P
Abstract: 1200v18a 30N120P
Text: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200
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IXFL30N120P
300ns
30N120P
4-01-08-C
IXFL30N120P
1200v18a
30N120P
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Untitled
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP8640, LMP8640-Q1, LMP8640HV SNOSB28G – AUGUST 2010 – REVISED NOVEMBER 2014 LMP8640/-Q1/HV Precision High Voltage Current Sense Amplifiers 1 Features 3 Description •
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LMP8640,
LMP8640-Q1,
LMP8640HV
SNOSB28G
LMP8640/-Q1/HV
LMP8640-Q1
LMP8640:
LMP8640-Q1:
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