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    HV1230 Price and Stock

    Bellnix Co Ltd MHV12-300S10P

    DC DC CONVERTER 300V 3W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MHV12-300S10P Bulk 49 1
    • 1 $135.15
    • 10 $135.15
    • 100 $117.1016
    • 1000 $117.1016
    • 10000 $117.1016
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    CoreStaff Co Ltd MHV12-300S10P 120
    • 1 $117.436
    • 10 $103.972
    • 100 $92.463
    • 1000 $89.709
    • 10000 $89.709
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    MHV12-300S10P 1
    • 1 $117.436
    • 10 $103.972
    • 100 $92.463
    • 1000 $89.709
    • 10000 $89.709
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    Bellnix Co Ltd MHV12-300S10N

    DC DC CONVERTER -300V 3W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MHV12-300S10N Bulk 18 1
    • 1 $132.6
    • 10 $132.6
    • 100 $117.871
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    Chip One Stop MHV12-300S10N Bulk 10
    • 1 -
    • 10 $86.8
    • 100 $86.8
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    CoreStaff Co Ltd MHV12-300S10N 118
    • 1 $117.436
    • 10 $103.972
    • 100 $92.463
    • 1000 $89.709
    • 10000 $89.709
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    HVM Technology UMHV1230

    DC DC CONVERTER 3000V 500MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UMHV1230 Bulk 3 1
    • 1 $190
    • 10 $190
    • 100 $190
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    HVM Technology UMHV1230N

    DC DC CONVERTER -3000V 500MW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UMHV1230N Bulk 5
    • 1 -
    • 10 $229.844
    • 100 $229.844
    • 1000 $229.844
    • 10000 $229.844
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    Anytek Technology Corporation Ltd HV1230800000G

    TERM BLK 12P TOP ENT 3.81MM PCB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HV1230800000G Bulk 2,070
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    • 10000 $1.32141
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    Onlinecomponents.com HV1230800000G
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    • 1000 $2.68
    • 10000 $1.28
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    Interstate Connecting Components HV1230800000G
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    Find more HV1230 price and stock on Findchips.com

    HV1230 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HV1230800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 12P TOP ENT 3.81MM PCB Original PDF

    HV1230 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HVV0912-800

    Abstract: SEMICONDUCTORS INC
    Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV0912-800 HVV0912-800 429-HVVi EG-01-POXXX1 SEMICONDUCTORS INC PDF

    HV1011-1000L

    Abstract: No abstract text available
    Text: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness


    Original     		HV1011-1000L 1090MHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: A DESCRIPTION GE PACKAGE The high power HVV0405-1000 device is a high voltage silicon enhancement mode RF transistor designed for UHF-band pulsed RADAR applications operating over the frequency range of 420 MHz to 470 MHz. FEATURES High Power Gain Excellent Ruggedness


    Original     		HVV0405-1000 HV1230 MIL-STD-883, PDF

    Untitled

    Abstract: No abstract text available
    Text: 800 Watts, 50V, 960-1215MHz DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES


    Original     		960-1215MHz HVV0912-800 PDF

    HVV1011-1000L

    Abstract: transistor 1000W 1000w power supply 1030 PULSED
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED PDF

    diode gp 429

    Abstract: HVV1011-1000L interrogator transistor 1000W
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXXX 07/XX/09 diode gp 429 interrogator transistor 1000W PDF