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    HWF1681RA Search Results

    HWF1681RA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HWF1681RA Hexawave 15 W L-band GaAs power FET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: HWF1681RA 1234567849A7BCDEF7 7 June 2005 V3 Features • High Output Power: P1dB=34.5 dBm typ. Outline Dimensions • High Gain: GL=15 Db (typ.) • High Efficiency: PAE =43% (typ.) • High Linearity: IP3=48 dBm (typ.) • Class A or Class AB Operation


    Original     		PDF 15dBm,

    HWF1681RA

    Abstract: CI 7408 Y 335 7408 hct pir 345 GI 335
    Text: HWF1681RA L-Band GaAs Power FET June 2005 V3 Features • High Output Power: P1dB=34.5 dBm typ. Outline Dimensions • High Gain: GL=15 Db (typ.) • High Efficiency: PAE =43% (typ.) • High Linearity: IP3=48 dBm (typ.) • Class A or Class AB Operation


    Original     		PDF 15dBm, HWF1681RA CI 7408 Y 335 7408 hct pir 345 GI 335

    gl 1117 B

    Abstract: gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644
    Text: HWF1681RA HSXAWAVS High Power GaAs FET Rev.B S eptem bet998 Features • H ig h O u tp u t P ow er PidB=34.5dBm typ. @ 2.4G H z • H ig h G ain • H ig h E fficiency O U T L IN E D R A W IN G Gl= 15dB(typ.)@2.4GHz 1.625(0.065) Tjadd =43%(typ.)@2.4GHz •


    OCR Scan     		PDF bet998 HWF1681RA 48dBm F1681R gl 1117 B gl 1117 ax gs 1117 ax QM 1117 sn 0716 173300 TA 8644