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Catalog Datasheet	MFG & Type	PDF	Document Tags
HXNV0100 Abstract: No abstract text available Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	PDF	HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000
Untitled Abstract: No abstract text available Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s	Original	PDF	HXNV0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 ADS-14191
honeywell mram Abstract: silicon on insulator Text: HMXNV0100 h HXNV0100 64K x 16 Non-Volatile Magnetic RAM Advanced Information The 64K x 16 radiation hardened low power nonvolatile Integrated Power Up and Power Down circuitry controls Magnetic RAM MRAM is a high performance 65,536 the condition of the device during power transitions.	Original	PDF	HMXNV0100 HXNV0100 16-bit honeywell mram silicon on insulator
HXNV0100 Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram Text: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	PDF	HXVN0100 HXNV0100 1x106 1x109 1x1012 1x10-10 1x1014 1x1015 N61-0995-000-000 Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram