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    10N65F

    Abstract: No abstract text available
    Text: HY10N65T / HY10N65FT 650V / 10A 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original     		PDF HY10N65T HY10N65FT 2002/95/EC ITO-220AB O-220AB O-220AB ITO-220AB MIL-STD-750 HY10N65T 10N65T 10N65F

    1N21 diode

    Abstract: 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS
    Text: MICROLAB/FXR Signal Samplers HX, HY, HZ series ♦ ♦ ♦ ♦ ♦ High Power, Reactive Probe 50 – 12,000 MHz 500 Watt Average Power Rating Minimal RF Insertion Loss High Reliability N, BNC, TNC, or SMA Standard Custom miniaturized versions to special order


    Original     		PDF HX-10N HY-10N HZ-10N 1N21 diode 1N23 diode 1N21 Diode Detector Mount 1N23 Diode Holder 1n21 1N21* Diode Detector Holder Microlab/FXR 1n21 1N23 HY-10N BNC T connectors INSERTION LOSS