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    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT PDF

    MAX7523

    Abstract: No abstract text available
    Text: HY5117400A, HY5116400A -HYUNDAI 4M DESCRIPTION X 4-bit CMOS DRAM ORDERING INFORMATION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode C M O S DRAMs. Fast Page mode offers high speed random access o f m em ory cells w ithin the sam e row.


    OCR Scan     		HY5117400A, HY5116400A HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT HY5116400AJ Y5116400ASLJ HY5116400AT HY5116400ASLT MAX7523 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5116400A 1A023-10-MAY95 HY5116400AJ HY5116400ASLJ HY5116400AT HV51164CX HY5116400AR PDF

    HY5116400A

    Abstract: No abstract text available
    Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5116400A 04711JOOl 43c12 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ PDF

    TAA 691

    Abstract: No abstract text available
    Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116400A HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASU HY5116400Ã HY5116400ASLT TAA 691 PDF

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM Witti WPB DESCRIPTION The HY5116410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116410A HY5116410Ato 1AD24-10-MAY94 HY5116410AJ HY5116410ASLJ HY511641 HY5116410ASLT PDF

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


    OCR Scan     		HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASLJ HY5116400AT HY5116400ASLT HY5116400AR PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 1 6 4 1 0 A S e r ie s 4M x 4-bit CMOS DRAM with WPB DESCRIPTION The HY5116410A is the new generation and last dynamic RAM organized 4,194,304 x 4-bit. The HY5116410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5116410A HY5116410A HY5116410Ato performanc00 1AD24-10-MAY94 HY5116410AJ HY5116410ASLJ HY511641 HY5116410ASLT PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220 PDF

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


    OCR Scan     		32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ PDF