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    Abstract: No abstract text available
    Text: HY5116404B Series »HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


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    HY5116404B HY5116404B 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT PDF

    s69 lf

    Abstract: 0h07 DHR38
    Text: •HYUNDAI HY5116404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION T h e H Y 5 1 1 6 4 0 4 B is th e new g e n e ra tio n and fa s t d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it. T h e H Y 5 1 1 6 4 0 4 B u tiliz e s H y u n d a i’s C M O S silic o n g a te p ro c e s s te c h n o lo g y a s a d v a n c e d c ircu it te c h n iq u e s to p ro v id e w id e o p eratin g


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    HY5116404B ila2600 1AD49-10-MAY95 HY5116404BJ HY5116404BSLJ HY5116404BT HY5116404BSLT HY5116404BR HY5116404BSLR s69 lf 0h07 DHR38 PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF