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    Untitled

    Abstract: No abstract text available
    Text: HY5116800 Series • H Y UN D A I 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116800 HY5116800 1AD07-10-MAV94 0Q0313& HY5116800JC HY5116800SLJC HY5116800TC

    Untitled

    Abstract: No abstract text available
    Text: HY5116800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116800 1AD07-10-MAY94 HY5116800JC HY5116800SLJC