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    hy512264

    Abstract: HY512264JC HY512264TC
    Text: HY512264 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and


    Original     		PDF HY512264 128Kx16, 16-bit 16-bits 128Kx16 hy512264 HY512264JC HY512264TC

    hy512264

    Abstract: hy512260 8 bit dRAM Controller
    Text: HY512260 128Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and


    Original     		PDF HY512260 128Kx16, 16-bit 16-bits 128Kx16 hy512264 hy512260 8 bit dRAM Controller

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    HY512264

    Abstract: HY512264JC HY512264TC HY512264 tc
    Text: »HYUNDAI HY512264 Series 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The H Y 512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY512264 128Kx 16-bit 400mil 40pin 40/44pin 033jC 1AB10-00-MAY95 HY512264JC HY512264TC HY512264 tc

    HY512264

    Abstract: HY512264TC
    Text: “H Y U N D A I HY512264 Series _128K x 16-bit CMOS DRAM with 2/CAS, Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION The H Y 5 12264 Series is a high perform ance CM O S fast dynam ic RAM organized 131,072x16 -b it config-uration. Independent read and w rite o f upper and


    OCR Scan     		PDF HY512264 072x16 40pin 40/44pin HY512264JC HY512264LJC HY512264SLJC HY512264TC

    HY512264

    Abstract: HY512264jc
    Text: “H YU N D A I H Y 5 1 2 2 6 4 S e r ie s 128Kx 16-bit CMOS DRAM with 2CAS, Extended Data Out PRELIMINARY DESCRIPTION The HY512264 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF 128Kx 16-bit HY512264 400mil 40pin 40/44pin 75Dfià 1AB10-00-MA HY512264jc

    HY512264TC

    Abstract: No abstract text available
    Text: H Y U N D A I -« HY512264 > 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and


    OCR Scan     		PDF HY512264 128Kx16, 16-bit 16-bits HY512264TC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 2 2 6 4 128Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. In dependant read and write of upper and


    OCR Scan     		PDF 128Kx16, 16-bit 16-bits

    HY512264

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 2 2 6 4 128Kx16, E xten ded Data O ut m ode DESCRIPTION T his fam ily is a 4M bit d yn am ic RAM o rg an ized 131,072 x 16-bit con figu ration w ith C M O S DR AM s. T he circu it and process de sig n allow this d e vice to achieve high p e rfo rm an ce and low po w e r dissipa tion . In de pe n d a n t read and w rite of up p e r and


    OCR Scan     		PDF HY512264 128Kx16, 16-bit 16-bits DQ0-DQ15) 128Kx16

    marking q815

    Abstract: No abstract text available
    Text: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and


    OCR Scan     		PDF 128Kx16. 16-bit 16-bits marking q815