BT 2313 M
Abstract: Bt 2313 HY514264B HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt
Text: HY514264B Seies HYUNDAI 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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OCR Scan
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HY514264B
16-bit
HV514264B
400mil
40pin
40/44pin
1AC29-10-MA
BT 2313 M
Bt 2313
HY514264
BSH15
hy514264bjc50
icshtibi
BVOE 18
DCS15
npjt
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY514264B Seies 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
|
OCR Scan
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HY514264B
16-bit
400mil
40pin
40/44pin
0DD42fl6
1AC29-10-MAY95
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PDF
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BT 2313 M
Abstract: BT 2313 M ic data HY514264 HY514264B CP154 514264b
Text: •HYUNDAI ■■ ■ w n u ■ ■ ■ HY514264B Seies 2 5 6 K x 1 6 _b jt C M 0 S D R A M w ith E x te n d e d D a ta 0 u t PRELIMINARY DESCRIPTION T he HY514264B is the new generation and fast dynam ic RAM organized 262,144 x 16-bit configuration employing
|
OCR Scan
|
HY514264B
16-bit
Y514264B
400mil
40pin
40/44pin
1AC29-10-MAY95
HY514264BJC
BT 2313 M
BT 2313 M ic data
HY514264
CP154
514264b
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PDF
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