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    Untitled

    Abstract: No abstract text available
    Text: • H Y U N D A I H Y 5 1 V 4 8 0 0 B S e r ie s 5 1 2 K x 8 - b it C M O S D R A M PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V4800B HY51V4800B 1AC18-00-MA HY51V4800BJC HY51V4800BSUC HY51V4800BTC HY51V4800BLTC PDF

    OQ0005

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 4 8 0 0 B S e r ie s 512Kx8-blt C M O S DRAM PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		512Kx8-blt HY51V4800B 400mil 28pin 1AC18-00-MAY94 OQ0005 PDF

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J PDF