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    HY57V56420H Search Results

    HY57V56420H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V56420HLT Hynix Semiconductor 4 Banks x 16M x 4-Bit Synchronous DRAM Original PDF
    HY57V56420HT Hynix Semiconductor 4 Banks x 16M x 4-Bit Synchronous DRAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420H 4 Banks x 16M x 4Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V56420H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420H is organized as 4banks of 16,777,216x4.


    Original
    PDF HY57V56420H HY57V56420H 456bit 216x4. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V56420HT 64Mx4-bit, 8KRef., 4Banks, 3.3V DESCRIPTION T h e H Y 5 7 V 5 6 4 2 0 H is a 2 6 8 ,4 3 5 ,4 5 6 b it C M O S S y n c h ro n o u s D R A M , id e a lly s u ite d f o r th e m a in m e m o ry a p p lic a tio n s w h ic h re q u ire la rg e m e m o ry d e n s ity a n d h ig h b a n d w id th . H Y 5 7 V 5 6 4 2 0 H is o rg a n iz e d a s 4 b a n k s o f 1 6 ,7 7 7 ,2 1 6 x 4 .


    OCR Scan
    PDF HY57V56420HT 64Mx4-bit, 400mil 54pin

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan
    PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan
    PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201