HYUNDAI SEMICONDUCTOR HY6264A Search Results

HYUNDAI SEMICONDUCTOR HY6264A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPHR7404PU		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

HYUNDAI SEMICONDUCTOR HY6264A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HY6264ALP-70 Abstract: HY6264A HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP Text: HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION minimize current drain is unnecessary for the HY6264A Series. The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process	Original	HY6264A 192x8-bits HY6264A 70-Line 28pin 330mil HY6264ALP-70 HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP	PDF
HY6264A Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL Text: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	Original	HY6264A- HY6264A/ HY6264A-I 192x8-bits HY6264A/HY6264A-I 28pin 330mil HY6264A HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL	PDF
D4364c-15L Abstract: NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15 Text: Technical Report UCAM-CL-TR-536 ISSN 1476-2986 Number 536 Computer Laboratory Low temperature data remanence in static RAM Sergei Skorobogatov June 2002 15 JJ Thomson Avenue Cambridge CB3 0FD United Kingdom phone +44 1223 763500 http://www.cl.cam.ac.uk/ c 2002 Sergei Skorobogatov	Original	UCAM-CL-TR-536 sps32 D4364c-15L NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15	PDF
hy6264a Abstract: HY6264ALJ Text: HYUNDAI HY6264A Series SEMICONDUCTOR 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a hig h-speed low power, 8,192 x 8-bits CMOS static RAM fabricated using a twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access	OCR Scan	HY6264A speed-70/85/100/120ns ama56i. 1DB02-11-MAY93 HY6264AP HY6264ALP HY6264ALJ	PDF
PACKAGE-600MIL Abstract: 8KX8-Bit CMOS SRAM 192x8 Text: HYUNDAI ELECTRONICS sie t> m a s o f i a 0001157 bse h h y n k •H yundai SEMICONDUCTOR HY6264A 8KX8-Bit C M O S SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS, static RAM fabrica ted using a twin tub CMOS process technolo	OCR Scan	50afl HY6264A M261201B-MAY92 DQG1137 PACKAGE-600MIL PACKAGE-330MIL 8KX8-Bit CMOS SRAM 192x8	PDF
HY6284A Abstract: No abstract text available Text: •HYUNDAI H Y 6 2 6 4 A - i 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY6264A/ HY6264A-I 192x8-bits HY6264A/HY6264A-I HY6264A- -100mA 100mA 28pin HY6284A	PDF
Untitled Abstract: No abstract text available Text: HY6264A •Hyundai SEMICONDUCTOR 8KX 8-Bit CM OS SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica ted using a twin tub CMOS process technolo gy. This high reliability process coupled with	OCR Scan	HY6264A M261201B-MAY92 85/100/120/150ns HY6264A -600M -330M IAI31AI	PDF