T85 Slide Switch
Abstract: SPDT Slide Switch SS VDE T85 Switch
Text: C&K V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available Typical Applications • Appliances Models Available
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UL94V-2)
T85 Slide Switch
SPDT Slide Switch SS
VDE T85 Switch
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Untitled
Abstract: No abstract text available
Text: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances
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UL94V-2)
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T85 Slide Switch
Abstract: V80212MA08Q V80212SS05Q I36 MARKING 115V-230V
Text: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances
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UL94V-2)
T85 Slide Switch
V80212MA08Q
V80212SS05Q
I36 MARKING
115V-230V
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T85 Slide Switch
Abstract: 115V-230V
Text: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances
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T85 Switch
Abstract: No abstract text available
Text: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances
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Original
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UL94V-2)
UL94V-NG
T85 Switch
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PDF
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T85 Slide Switch
Abstract: T85 Switch
Text: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances
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UL94V-2)
T85 Slide Switch
T85 Switch
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SC-89-6
Abstract: AN1030 FDY6342L SC89 SC89-6
Text: FDY6342L tm Integrated Load Switch Features General Description Max rDS on = 0.5 Ω at VGS = 4.5 V, ID = –0.83 A This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V input and 0.83 A output current capability are needed. This
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FDY6342L
SC89-6
FDY6342L
SC-89-6
AN1030
SC89
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Untitled
Abstract: No abstract text available
Text: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V
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FDN5632N
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Untitled
Abstract: No abstract text available
Text: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V
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FDN5632N
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FDMA1027P
Abstract: I36 MARKING
Text: FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state
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FDMA1027P
FDMA1027P
I36 MARKING
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fdh5500
Abstract: FDH5500_F085 I36 MARKING TB334
Text: FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators
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FDH5500
118nC
-TB334,
FDH5500_F085
I36 MARKING
TB334
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Untitled
Abstract: No abstract text available
Text: FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications ̈ Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A ̈ DC Linear Mode Control ̈ Typ Qg(10) = 118nC at VGS = 10V ̈ Solenoid and Motor Control ̈ Simulation Models ̈ Switching Regulators
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FDH5500
118nC
-TB334,
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600v 30a IGBT
Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGH30N120FTD
1200ut
FGH30N120FTD
600v 30a IGBT
FGH30N120FTDTU
IGBT 1200V 60A
IGBT 200A 1200V application induction heating
IGBT 60A 1200V
HIGH VOLTAGE DIODE for microwave ovens
igbt 600V 30A datasheet
I36 MARKING
igbt for HIGH POWER induction heating
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fgpf50n33
Abstract: FGPF50N33BT
Text: FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF50N33BT
FGPF50N33BT
O-220F
fgpf50n33
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Untitled
Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGH30N120FTD
FGH30N120FTD
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Untitled
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
FDFMA2P853
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Untitled
Abstract: No abstract text available
Text: FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has
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FDD6770A
O-252)
FDD6770A
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FDY102
Abstract: No abstract text available
Text: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to
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FDY102PZ
FDY102PZ
SC89-3
FDY102
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FDMA1027PT
Abstract: No abstract text available
Text: FDMA1027PT tm Dual P-Channel PowerTrench MOSFET –20 V, –3 A, 120 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent
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FDMA1027PT
FDMA1027PT
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MARKING WL
Abstract: FDZ391P
Text: FDZ391P P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET -20 V, -3 A, 85 mΩ Features tm General Description Max rDS on = 85 mΩ at VGS = -4.5 V, ID = -1 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process,
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FDZ391P
FDZ391P
MARKING WL
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sC89-6
Abstract: FDY1002PZ SC89
Text: Dual P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to
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SC89-6
FDY1002PZ
sC89-6
SC89
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FDD6770A
Abstract: I36 MARKING
Text: FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has
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FDD6770A
O-252)
FDD6770A
I36 MARKING
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FDFMA2P853
Abstract: No abstract text available
Text: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET
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FDFMA2P853
FDFMA2P853
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm D5SC4MR OUTLINE 40V 5A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P r r s m Rating • Full Molded • 71 [ Æ - J U K Main Use • Switching Regulator • D C /D C U V A ' - S 7
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