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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	S8836B 002210b S8836B 226mA	PDF

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Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

OCR Scan

S8836B 002210b S8836B 226mA

PDF