Contextual Info: |j PD30200 VR4300 64-Bit Microprocessor NEC Electronics Inc. Addendum 1 January 1996 This addendum to the ^iPD30200 D ata S h eet dated O ctober 1995 (Docum ent No. U 1 0 1 1 6 E J 1 V 0 D S 0 0 ) revises Section 8, Electrical C haracteristics, on p ages 42 and 43.

VR4300i

Contextual Info: NEC 8. ¿iPD30200, 30210 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings Ta = 25 °C Parameter Supply voltage Input voltageNote Symbol Condition V dd Vi Pulse of less than 10 ns Operating case temperature Storage temperature Note Tc Tstg The upper limit of the input voltage (V dd

Contextual Info: NEC ¿¿PD30200, 30210 PIN CONFIGURATION Top View • 120-pin plastic QFP (28 x 28 mm) /¿PD30200GD-80-LBB /XPD30200GD-100-MBB ¿¿PD30200GD-133-MBB /¿PD3Q210GD-100-MBB /¿PD30210GD-133-MBB /¿PD30210GD-167-MBB 000 QOQQOQQOQOOQOQQOQQOOOOQOQO o r o c o N m ifi't n w

Contextual Info: NEC 2. ¿¿PD30200, 30210 INTERNAL BLOCK 1 Execution unit E xe cu te s in te g e r o p e ra tio n in s tru c tio n s and flo a tin g -p o in t o p e ra tio n in s tru c tio n s . T h is unit is p ro v id e d w ith th e fo llo w in g : • 64 -b it re g is te r file

NEC VR4300

Abstract: nec r4300 NEC r4305
Contextual Info: NEC ¿¿PD30200, 30210 3. INTERNAL ARCHITECTURE 3.1 Pipeline Each instruction is executed in the following five steps: 1 IC instruction fetch (2) RF decode, register fetch, jump/branch (3) EX execution (4) DC data cache read (5) WB write to registerfile and data cache

divmode

Contextual Info: NEC 1. ¿¿PD30200, 30210 PIN FUNCTIONS Pin Name I/O SysAD 31:0 I/O Function System address/data bus. 32-bit bus for communication between processor and external agent. SysCmd (4:0) I/O System command/data ID bus. 5-bit bus for communication of commands and data identifiers between processor

Contextual Info: NEC ¿iPD30200, 30210 ★ APPENDIX DIFFERENCES BETWEEN THE V r4300, V r4305, V r4310 AND V r4100 V r4300 P aram eter System bus W rite data tran sfe r V r4305 V r4310 T w o buses D D x/D xx V r4100 Four buses (D /D x/D xx/D xxx) Initial value setting

Contextual Info: NEC 7. ¿¿PD30200, 30210 INSTRUCTION SET The V r4 3 0 0 ’ s in s tru c tio n s co n s is t of 1 w ord 32 bits located on a w ord bou n d a ry. The in s tru c tio n form at has th re e typ e s as show n in Figure 7-1. D ecoding of in s tru c tio n s is sim p lifie d by having only th re e fo rm at typ es.

nec r4300

Abstract: upd3
Contextual Info: ¿¿PD30200, 30210 NEC 5. INTERFACES 5.1 S yste m In te rfa c e The processor’s input/output tim ings are as follows: • The processor output starts to change at the rising edge of SCIock. • The processor input is latched at the rising edge of SCIock.

upd3

Contextual Info: NEC ¿¿PD30200, 30210 6. INTERNAL/EXTERNAL CONTROL FUNCTIONS 6.1 Reset Function T he V r4300 has tw o reset sig n a ls: cold reset C oldR eset and s o ftw a re reset (R eset). S etting of the necessary m ode is c o n tro lle d d ire c tly by pins and the config register.

Contextual Info: NEC 4. ¿¿PD30200, 30210 FPU INTERNAL ARCHITECTURE V r 4 3 0 0 ’s FPU flo a tin g -p o in t a rith m e tic unit is in te g ra te d into the CPU (in te g e r a rith m e tic unit). The CPU and the FPU use the sam e d a ta bus, and FPU in s tru c tio n s are e xe cu te d by the CPU hardw are.

120-pin

Abstract: 120-pin, microprocessor r4305 NEC r4305
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT UPD30200, 30210 V r4300 , V r4305™, V r4310™ 64-BIT MICROPROCESSOR The /XPD30200 V r4300 , 30200-133 (V r4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4300 64-BIT MICROPROCESSOR The /¿PD30200 V r4300 is a high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessor employing the RISC architecture developed by MIPS. The V r4300 is intended for the high-performance embedded device field and has a 32-bit system bus.

Contextual Info: NEC ¿iPD30200, 30210 - NOTES FOR CMOS DEVICES- PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong e le ctric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultim ately degrade the device operation. Steps must