Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S17800
uPD4217800
The/iPD42S17800,
PD42S17800
28-pin
/jPD42S
juPD42S17800-70
PD42S17800-80,
130su
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NEC 424400
Abstract: NEC 424400-70 424400 60 424400 80 uPD424400 424400
Text: DATA SHEET MOS INTEGRATED CIRCUIT /IPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4400
uPD424400
PD42S4400,
PD42S4400
26-pin
uPD42S4400-60
uPD42S4400-70
PD424400-80
NEC 424400
NEC 424400-70
424400 60
424400 80
424400
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K1537
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. Description The ¿/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are power supply voltage + 5 V or
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uPD424263A/L
uPD42S4263A/L
16-Bit
/PD424263A/L
/iPD42S4263A/L
24263A
424263L
42S4263A
42S4263L
jPD424263A/L,
K1537
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /iPD42S18160L are assembled.
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MC-42S1000LAD32S
32-BIT
TheMC-42S1000LAD32S
/iPD42S18160L
M72S-50A4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT /iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description T h e ¿ P D 42S16400L, 4 21 6 4 0 0 L , 4 2 S 1 7 4 0 0 L , 4 2 1 7 4 0 0 L a re 4 194 3 0 4 w o r d s b y 4 b its d y n a m ic C M O S R A M s .
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/iPD42S16400L,
4216400L,
42S17400L,
4217400L
42S16400L,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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nec A2C
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
50-pin
42-pin
pPD42S16165L-A60,
4216165L-A60
/iPD42Sl6165L-A70,
nec A2C
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PD42S4400
Abstract: NEC 424400-70 77ti NEC 424400 uPD424400 NEC 424400-60 424400-70
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jitP D 4 2 S 4 4 0 0 , 4 2 4 4 0 0 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D escription The |iPD42S4400. 424400 are 1,048,576 words by 4 bits C M O S dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4400
uPD424400
/PD42S4400
26-pin
/jPD42S4400-60,
MPD42S4400-70,
/PD424400-80
XPD424400-10
VP15-207-2
PD42S4400
NEC 424400-70
77ti
NEC 424400
NEC 424400-60
424400-70
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PD4264805G5-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S64805
uPD4264805
uPD42S65805
uPD4265805
64M-BIT
/iPD42S64805,
42S65805,
//PD42S64805,
42S65805
32-pin
PD4264805G5-A60-7JD
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SL680C
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The
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421780C
uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800
28-pin
R35-207-2
SL680C
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D42S17800-70
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800,
/IPD42S16800,
42S17800
28-pin
D42S17800-70
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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D4242
Abstract: 3V07
Text: NEC NEC Electronics Inc. Description The /L/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or
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uPD424263A/L
uPD42S4263A/L
24263A
424263L
42S4263A
42S4263L
24263A/L,
42S4263A/L
16-Bit
D424263A/L,
D4242
3V07
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NEC 4216160
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S18160,
/iPD42S16160,
42S18160
50-pin
NEC 4216160
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NEC 424400-70
Abstract: PD42S4400 NEC 424400 uPD424400 NEC 424400-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The |iPD42S4400, 424400 are 1,048,576 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4400
uPD424400
iPD42S4400,
/xPD42S4400
26-pin
//PD42S4400-60,
PD42S4400-70,
//PD424400-80
//PD424400-10
NEC 424400-70
PD42S4400
NEC 424400
NEC 424400-60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2000LAD32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAD32S series is a 2,097,152 words by 32 bits dynamic RAM module (Sm all Outline D IM M ) on which 4 pieces of 16 M DRAM: /iPD42S18160L are assembled.
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MC-42S2000LAD32S
32-BIT
uPD42S18160L
M72S-50A3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /iPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿¡PD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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/iPD42S17405,
PD42S17405,
PD42S17405
26-pin
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Untitled
Abstract: No abstract text available
Text: m e NEC Electronics Inc. Description The /JPD424900A/L and /iPD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or +3.3 V and a new refresh mode called “ self-refresh.”
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/JPD424900A/L
/iPD42S4900A/L
24900A
424900L
42S4900A
42S4900L
JJPD424900A/L,
42S4900A/L
pPD424900A/L,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /iPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ¿¡PD42S17805, 4217805 are 2,097,152 w ords by 8 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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/iPD42S17805,
PD42S17805,
PD42S17805
28-pin
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Untitled
Abstract: No abstract text available
Text: * *C -.s, IPD42S4260 |aPD42S4260L 262.144x16 Bit Dynamic CMOS DRAM NEC NEC Electronics Inc. ! Preliminary Information October 1991 Description Pin Configuration The iPD42S4260/L is a fast page dynamic RAM organized as a 262,244 words by 16 bits and designed
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IPD42S4260
aPD42S4260L
144x16
jiPD42S4260/L
jiPD42S4260)
iPD42S4260L)
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nec A2C
Abstract: 8160l1
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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uPD42S18160L
uPD4218160L
16-BIT,
/iPD42S18160L,
4218160L
PD42S18160L
50-pin
42-pin
PD42S18160L-A60,
4218160L-A60
nec A2C
8160l1
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4217405
Abstract: 4217405-60 PD42S17405-70 PD42S17405
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿iPD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17405
uPD4217405
iPD42S17405,
jiPD42S17405,
26-pin
/PD42S17405-50,
PD42S
//PD42S17405-70,
4217405
4217405-60
PD42S17405-70
PD42S17405
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42S4800LE-70
Abstract: 424800-70 trw 8102 UPD424800
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4800, 424800 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S4800, 424800 are 524,288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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uPD42S4800
uPD424800
/iPD42S4800,
PD42S4800
28-pin
1PD42S4800-60,
/iPD42S
UPD42S4800-80,
/JPD42S4800-10,
42S4800LE-70
424800-70
trw 8102
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D42S18165
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ ¿ P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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16-BIT,
uPD42S18165
uPD4218165
/jPD42S18165
/iPD42S18165,
50-pin
42-pin
016lg
PD42S18165,
D42S18165
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