zup series
Abstract: rs485 to rs232 Nemic-Lambda LAMBDA zup hyperterminal* rs232 NC401 RS232 DB9 cable dwg hyperterminal ASCII NC403
Text: NEMIC-LAMBDA LTD ZUP SERIES COMMUNICATION TEST SET UP using Hyper Terminal Windows software DWG No: IA549-04-03 Prepared Checked Approved TEST PROGRAM: ZUP COMMUNICATION VIA HYPERTERMINAL 1 Equipment: PC with HyperTerminal of Windows, ZUP Power Supply,
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IA549-04-03
RS232
NC401
NC403
DB-25
IA549-04-03/01
IA549-04-03/2
RS232/485
zup series
rs485 to rs232
Nemic-Lambda
LAMBDA zup
hyperterminal* rs232
RS232 DB9 cable dwg
hyperterminal
ASCII
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IA5250
Abstract: IA5450A IA5000 db9 dimensions
Text: Serial-to-Ethernet Device Servers NPort IA5000A Series 1, 2, and 4-port serial device servers for industrial automation ››Enhanced surge protection for serial, LAN, and power ››2 KV isolation for serial signals ››Rugged screw-type terminal blocks for power and serial
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IA5000A
10/100BaseT
IA5150A
RS-422/485
WK-36-01:
IA5150A/IA5250A
WK-51-01:
IA5450A
IA5250
IA5450A
IA5000
db9 dimensions
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IRF7476
Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance
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IRF7476
EIA-481
IA-541.
IRF7476
TH 2190 mosfet
F7101
IRF7101
MS-012AA
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IRF7317
Abstract: MS-012AA
Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V
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1568B
IRF7317
EIA-48
IA-541.
IRF7317
MS-012AA
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power mosfet so8 FL
Abstract: No abstract text available
Text: PD- 93899 PROVISIONAL IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001
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IRF7453
AN1001)
power mosfet so8 FL
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PP-1040
Abstract: No abstract text available
Text: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated
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PP-1040
-UL94-HB,
E216959
UL1007,
IA-540J000
PP-1040
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Untitled
Abstract: No abstract text available
Text: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated
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PP-1040
-UL94-HB,
E216959
UL1007,
IA-540J000
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Untitled
Abstract: No abstract text available
Text: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated
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PP-1040
-UL94-HB,
E216959
UL1007,
IA-540J000
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DIODE S2
Abstract: 21A 8 BALL IRF6156
Text: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode Description l FlipFET Power MOSFET VSS 20V RSS(on) max
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IRF6156
IA-481
IA-541.
DIODE S2
21A 8 BALL
IRF6156
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IRF7451
Abstract: AN1001 IRF74 13-AB
Text: PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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3898A
IRF7451
AN1001)
IRF7451
AN1001
IRF74
13-AB
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84Fo
Abstract: IRF7379 EIA48
Text: PD - 91625 IRF7379 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 30V -30V RDS on 0.045Ω 0.090Ω
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IRF7379
84Fo
IRF7379
EIA48
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Untitled
Abstract: No abstract text available
Text: PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V RDS on = 0.058Ω T op V iew Description
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1436B
IRF7314
EIA-48
IA-541.
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Untitled
Abstract: No abstract text available
Text: PD- 93843 PROVISIONAL IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including
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IRF7463
AN1001)
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Untitled
Abstract: No abstract text available
Text: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF7451
AN1001)
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800w power inverter circuit diagram
Abstract: Lambda-GP485 neptune digital Energy Meter M8 NC405 Nemic-Lambda power supply unit zup20-40 user manual NEMIC LAMBDA supply Circuit diagram coutant power supply coutant power supply 5V NEMIC-LAMBDA ZUP10-80 LAMBDA zup
Text: DENSEI-LAMBDA ZERO-UP 200W/400W/800W Programmable DC Power Supplies Constant Voltage/Constant Current Built-in RS232 & RS485 Interface with GPIB option. C US LISTED . TESTING EQUIPMENT TUV Rheinland 65SA . geprufte Sicherheit USER'S MANUAL KARMIEL INDUSTRIAL ZONE, POB 500, ZC-20101, ISRAEL.
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00W/400W/800W
RS232
RS485
ZC-20101,
ZUP6-33
ZUP10-20
ZUP20-10
ZUP36-6
ZUP60-3
ZUP6-66
800w power inverter circuit diagram
Lambda-GP485
neptune digital Energy Meter M8
NC405
Nemic-Lambda power supply unit zup20-40 user manual
NEMIC LAMBDA supply Circuit diagram
coutant power supply
coutant power supply 5V
NEMIC-LAMBDA ZUP10-80
LAMBDA zup
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T8A250V
Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
Text: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,
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1-800-LAMBDA-4
RS232
RS485
RS232)
T8A250V
800w power inverter circuit diagram
NEMIC LAMBDA supply Circuit diagram
transistor Arm 3055 equivalent
coutant
coutant power supply 5V
nc302
zener diode for 240v ac voltage
remote control
LAMBDA zup
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Untitled
Abstract: No abstract text available
Text: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V
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IRF7555
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C8X1
Abstract: No abstract text available
Text: PD- 93842 PROVISIONAL IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See
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IRF7455
AN1001)
C8X1
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irf7317
Abstract: No abstract text available
Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V
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1568B
IRF7317
EIA-48
IA-541.
irf7317
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Untitled
Abstract: No abstract text available
Text: PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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3898A
IRF7451
AN1001)
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Irf7314
Abstract: No abstract text available
Text: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier
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1436B
IRF7314
Irf7314
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Untitled
Abstract: No abstract text available
Text: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-1057 (Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word x 8-bit. They have realized high performance and low power by employing CMOS process
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HM5164805F
HM5165805F
ADE-203-1057
64M-bit
608-word
32-pin
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transistor A495
Abstract: A495 case 316-01 MRF248 1117 t33 1117 33L 25CC MRF24 vk200 ferrite bead VK200 ferrite choke
Text: MOTOROLA I SC -CXSTRS/R F> ÖT » E | b 3b7S S 4 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F D 0 7 flat.fl 1 ( D T ~ 3 3 -l£ 89D 7 8 8 6 8 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF248 N P N Silic o n RF P o w e r T ran sisto r . . . designed fo r 12,5 v o lt VH F large-signal am p lifie r applications in industrial and co m
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MRF248
MKI-Z48
transistor A495
A495
case 316-01
MRF248
1117 t33
1117 33L
25CC
MRF24
vk200 ferrite bead
VK200 ferrite choke
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DTMF KEYPAD
Abstract: MA545 keypad dtmf generator marconi electronic devices ltd A545
Text: Marconi Electronic Devices L D /D T M F Keypad S w itchable Repertory Dialler Chip w ith Last N um ber Redial Facility M A545 FEATURES * S electable lo o p d is c o n n e c t o r D T M F d ia llin g m odes. * K eypad s w itc h a b le fro m LD to D T M F * 2 4 -d ig it Last N u m b e r Redial F acility
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MA545
24-digit
MA540/541
500ms
800ms.
MA545.
MA545
450/iA
DTMF KEYPAD
keypad dtmf generator
marconi electronic devices ltd
A545
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