D2150
Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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C848A3
BTD2150A3
100mA
BTB1424A3
UL94V-0
D2150
D2150 s
BTD2150A3
NPN transistor ECB TO-92 500ma 1A
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D2150
Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Text: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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C848A3
BTD2150A3
100mA
BTB1424A3
UL94V-0
D2150
NPN transistor ECB TO-92
PT10m
BTD2150A3
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N02 Transistor
Abstract: N02 npn DN050S DP050S N02 MARKING N02
Text: DN050S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application.
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DN050S
100mA/10mA)
DP050S
OT-23F
KST-2115-000
100mA
500mA
100mA,
N02 Transistor
N02 npn
DN050S
DP050S
N02 MARKING N02
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DN030
Abstract: Transistor DP030
Text: DN030 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application
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DN030
100mA/10mA)
DP030
DNO30
KST-9082-000
100mA
300mA
100mA,
DN030
Transistor
DP030
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DN030U
Abstract: DP030U Transistor N01 marking
Text: DN030U Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application
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DN030U
100mA/10mA)
DP030U
OT-323F
KST-3054-000
100mA
300mA
100mA,
DN030U
DP030U
Transistor
N01 marking
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N01 marking
Abstract: T 2109 DN030S DP030S
Text: DN030S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application
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DN030S
100mA/10mA)
DP030S
OT-23F
KST-2109-000
100mA
300mA
100mA,
N01 marking
T 2109
DN030S
DP030S
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DN030E
Abstract: Transistor IC 4009 DATASHEET Datasheet ic 4009 4009 kst40 4009 be 4009 NOT GATE IC in 4009 N01 marking
Text: DN030E Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030E • Switching Application
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DN030E
100mA/10mA)
DP030E
OT-523F
KST-4009-000
100mA
300mA
100mA,
DN030E
Transistor
IC 4009 DATASHEET
Datasheet ic 4009
4009
kst40
4009 be
4009 NOT GATE IC
in 4009
N01 marking
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DN050
Abstract: DP050
Text: DN050 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050 • Switching Application.
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DN050
100mA/10mA)
DP050
KST-9083-000
100mA
500mA
100mA,
DN050
DP050
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2SCR542P
Abstract: No abstract text available
Text: Midium Power Transistors 30V / 5A 2SCR542P Dimensions (Unit : mm) Structure NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) (2) (3) 2) High speed switching
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2SCR542P
100mA)
R0039A
2SCR542P
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DN030U
Abstract: DP030U
Text: DN030U NPN Silicon Transistor Features PIN Connection • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030U • Switching Application
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DN030U
100mA/10mA)
DP030U
OT-323
OT-323F
KSD-T5D007-000
DN030U
DP030U
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DN030S
Abstract: DP030S N01 MARKING CODE marking N01
Text: DN030S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030S • Switching Application PIN Connection
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DN030S
100mA/10mA)
DP030S
OT-23F
KSD-T5C008-000
DN030S
DP030S
N01 MARKING CODE
marking N01
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DN050S
Abstract: DP050S
Text: DN050S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050S • Switching Application. PIN Connection
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DN050S
100mA/10mA)
DP050S
OT-23F
KSD-T5C073-000
DN050S
DP050S
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2SCR542P
Abstract: T100
Text: Midium Power Transistors 30V / 5A 2SCR542P Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) 2) High speed switching Applications
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2SCR542P
100mA)
R0039A
2SCR542P
T100
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TS13002 TRANSISTOR
Abstract: 400V 100MA NPN TS13002 TS13002CT
Text: TS13002 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.2A Pin assignment: 1. Emitter 2. Collector 3. Base Features VCE SAT , = 0.5V @ Ic / Ib = 100mA / 10mA Ordering Information High voltage. Part No. High speed switching Structure Silicon triple diffused type.
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TS13002
100mA
TS13002CT
100mA,
125ohm
TS13002 TRANSISTOR
400V 100MA NPN
TS13002
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DN050
Abstract: DP050
Text: DN050 NPN Silicon Transistor PIN Connection C E B B • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.07V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP050 • Switching Application.
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DN050
100mA/10mA)
DP050
KSD-T0A036-000
DN050
DP050
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DN030
Abstract: DP030
Text: DN030 NPN Silicon Transistor PIN Connection C E B B • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.1V Typ. @IC/IB=100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030 • Switching Application
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DN030
100mA/10mA)
DP030
DNO30
KSD-T0A002-000
DN030
DP030
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Untitled
Abstract: No abstract text available
Text: 2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 3.0A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR543R 3) Low VCE sat) VCE(sat)=0.35V(Max.) (IC/IB=2A/100mA)
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2SCR543R
2SAR543R
A/100mA)
SC-96)
R1102A
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ztx341
Abstract: Vce-80V
Text: ZTX341 140 0.16 120 hFE - Gain % VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 MARCH 94
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ZTX341
100mA
60MHz
ztx341
Vce-80V
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sot-23 Marking Lf
Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
Text: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC3052
OT-23
100mA
100mA,
sot-23 Marking Lf
transistor marking LF sot-23
sot-23 Marking LG
marking NF sot-23
transistor marking LF
SOT-23 lf
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18BSC
Abstract: TSB1412 TSD2118 TSD2118CP
Text: TSD2118 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) Complementary part with TSB1412
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TSD2118
O-252
100mA
TSB1412
TSD2118CP
18BSC
TSB1412
TSD2118
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2sc3052
Abstract: sot-23 Marking LG
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain
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OT-23
OT-23
2SC3052
100mA
100mA,
2sc3052
sot-23 Marking LG
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A08 transistor
Abstract: No abstract text available
Text: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics
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TSD965A
100mA
TSD965ACT
A08 transistor
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transistor E11
Abstract: No abstract text available
Text: TSD1858 Low Vcesat NPN Transistor TO-251 IPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No.
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TSD1858
O-251
100mA
TSD1858CH
75pcs
transistor E11
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain
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OT-23
OT-23
2SC3052
100mA
100mA,
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