CMLM0705
Abstract: CMLM2205
Text: CMLM2205 MULTI DISCRETE MODULE SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM2205 is a Multi Discrete Module™ consisting of a single NPN
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Original
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PDF
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CMLM2205
CMLM2205
OT-563
CMLM0705
100mA,
150mA,
IB215mA
CMLM0705
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Untitled
Abstract: No abstract text available
Text: CMLM2205 MULTI DISCRETE MODULE SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM2205 is a Multi Discrete Module™ consisting of a single NPN
|
Original
|
PDF
|
CMLM2205
CMLM2205
OT-563
CMLM0705
100mA,
150mA,
IB215mA
|
Untitled
Abstract: No abstract text available
Text: CMLM2205 MULTI DISCRETE MODULE SURFACE MOUNT SILICON NPN SWITCHING TRANSISTOR AND LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM2205 is a Multi Discrete Module™ consisting of a single NPN transistor and Schottky diode packaged in a space
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Original
|
PDF
|
CMLM2205
CMLM2205
OT-563
CMLM0705
100mA,
150mA,
IB215mA
|
YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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OCR Scan
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PDF
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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