Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS M r ftrtTin7 IVIPSZ9U7 FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND 4.7 MAX , COMPLEMENTARY CIRCUITRY. FEATURES: Û4 5 . High DC Current Gain Specified : -0.1— -500mA
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-500mA
-50mA,
200MHz
MPS2222.
-10mA,
-10mA
-150mA
500mA
-150mA,
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TRANSISTOR 1f
Abstract: 1F transistor 1F t transistor 1fTRANSISTOR
Text: TD62M3701F TENTATIVE oLOW SATURATION VOLTAGE DRIVER FOR MOTOR Unit in mm 8.2 ± 0.2 TD62M3701F is Multi Chip IC incorporates R R R H H B R H 6 low saturation discrete transistors which equipped bias resistor and free-wheeling diode. This IC is suitable for a battery use motor
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TD62M3701F
TD62M3701F
SS0P16
RN5006)
RN6006)
TRANSISTOR 1f
1F transistor
1F t transistor
1fTRANSISTOR
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MPS2907 toshiba
Abstract: No abstract text available
Text: M5E D • ID TT ES D DOIVBSR H IT0S4 TOSHIBA TRANSISTOR MPS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS T 2 cr< TOSHIBA (DISCRETE/OPTO) FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY. FEATURES : . High DC Current Gain Specified : -0.1
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MPS2907
-50mA,
200MHz
MPS2222.
-500mA
-10/tA,
-10mA,
VcE--10V,
-10mA
MPS2907 toshiba
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2n2222 kec
Abstract: 2222a KTN2222 KTN2222A transistor h pn 2222a
Text: SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA Max. ; V ce-60V, V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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KTN2222/A
150mA,
KTN2907/2907A.
KTN2222/2222A
2N2222/2222A.
KTN2222
KTN2222A
2n2222 kec
2222a
KTN2222A
transistor h pn 2222a
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